Zobrazeno 1 - 10
of 28
pro vyhledávání: '"J.‐P. Gonchond"'
Publikováno v:
Microelectronic Engineering. 83:2136-2141
A challenge for semiconductor industry is to reach low permittivity required by ITRS (k
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0eb2ddc0dcd10ad5047dd580e998299f
https://doi.org/10.1016/j.mee.2006.09.022
https://doi.org/10.1016/j.mee.2006.09.022
Publikováno v:
ECS Transactions. 3:319-331
Characterization of advanced CMOS devices and control of front- end of line (FEOL) processes require state-of-the-art analytical techniques and specific measurement protocols. Dynamic Secondary Ion Mass Spectrometry (D-SIMS) is well suited for in-dep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3837daf0b42df0577e2a9c4fecdacb6
https://doi.org/10.1149/1.2356292
https://doi.org/10.1149/1.2356292
Publikováno v:
Applied Surface Science. 253:21-27
X-ray reflectivity (XRR), X-ray fluorescence (XRF) and small angle X-ray scattering (SAXS) techniques are used to the monitoring of Cu/porous low κ processes, which are developed for the next generation (≤65 nm) integrated circuits. Sensitivity of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a043134e01dab382edb761f8f4527fce
https://doi.org/10.1016/j.apsusc.2006.05.123
https://doi.org/10.1016/j.apsusc.2006.05.123
Autor:
L. Perino-Gallice, I. Mazor, J.‐P. Gonchond, C. Wyon, L. Kwakman, D. Delille, D. Muyard, S. Marthon, A. Michallet, A. Tokar, F. Heider, J.C. Royer
Publikováno v:
Thin Solid Films. 450:84-89
Accurate and reliable in-line monitoring of the different films thickness that occur throughout the integrated circuit manufacturing process is mandatory to develop and produce advanced microelectronic devices. X-ray reflectivity (XRR) is a fundament
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0dd60ac9ff165538f6868b8df595cf7
https://doi.org/10.1016/j.tsf.2003.10.159
https://doi.org/10.1016/j.tsf.2003.10.159
Publikováno v:
Journal of The Electrochemical Society. 142:1992-1996
Issues associated with TiSi 2 integration in a submicron complementary metal oxide semiconductor process are investigated. These include dielectric consumption by the silicidation process as well as the effects of postsalicidation thermal processing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0316c575a90a1d697b5c96e52c4b606
https://doi.org/10.1149/1.2044229
https://doi.org/10.1149/1.2044229
Publikováno v:
Quality and Reliability Engineering International. 10:319-324
Scanning ion and electron microscopy of focused ion beam cross-sections has been used to observe 0·6 μm contacts and 0·7 μm vias of a 0·5 μm CMOS technology. Three different kinds of cross-sections have been tested to improve the observation qu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6570cfd91feeb0f675b30191366b5faf
https://doi.org/10.1002/qre.4680100412
https://doi.org/10.1002/qre.4680100412
Publikováno v:
Quality and Reliability Engineering International. 9:299-302
Tungsten is widely investigated for contact and via filling to improve planarization and step coverage. Although many electromigration data are available on multilayered structures, very few studies have been carried out on W‐plug structures and ma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1fe431ae2dfb153d447e03051b32c3c
https://doi.org/10.1002/qre.4680090410
https://doi.org/10.1002/qre.4680090410
Autor:
Fabrice Casset, S. Dedieu, J. P. Gonchond, J.F. Carpentier, Cedric Durand, Pascal Ancey, Philippe Robert
Publikováno v:
EuroSimE 2009 - 10th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems.
Microelectromechanical Systems (MEMS) are intensivly studied since many years due to their high potential performances and their integration possibilities. In particular, electromechanical resonators realized at the CMOS level could allow the emergen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7966ca0480981bd8b435a03ffeab0db7
https://doi.org/10.1109/esime.2009.4938416
https://doi.org/10.1109/esime.2009.4938416
Autor:
Markus Pfeffer, E. Meissner, J. Langer, Heiner Ryssel, Anton J. Bauer, Lothar Pfitzner, S. Schmidbauer, J.-P. Gonchond, B. Ocker, W. Maass, Richard Oechsner, M. Kozlowska
Thin tantalum nitride layers were sputtered using Linear Dynamic Deposition (LDD) implemented in the 10 cathode TIMARIS Physical Vapor Deposition (PVD) sputtering equipment from Singulus Nano Deposition Technologies. During the deposition, the wafer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c59589247ba251c3a8045d112eea1632
https://publica.fraunhofer.de/handle/publica/220082
https://publica.fraunhofer.de/handle/publica/220082
Autor:
P. Delpech, H. Mingam, J.-P. Jeanne, D. Levy, N. Brun, M. Vernet, M. Ada-Hanifi, C. Masurel, M. Haond, T. Ternisien d'Ouville, M. Paoli, J. P. Gonchond
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 3:168-175
The optimization of a manufacturable self-aligned titanium silicide process is described. In particular, the integrity of the TiSi/sub 2/ layer has been studied versus the BPSG reflow conditions. Excellent contact resistance and very low leakage curr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a71a69c1a31e4520f9663288dd743e0b
https://doi.org/10.1109/66.61965
https://doi.org/10.1109/66.61965