Výsledky vyhledávání - "J-P. Manceau"

Current Instability, Permittivity Variation With Frequency, and Their Relationship in $\hbox{Ta}_{2}\hbox{O}_{5}$ Capacitor

Autor: A. Sylvestre, S. Jeannot, J.-P. Manceau, P. Gonon, Sylvie Bruyere

Publikováno v: IEEE Transactions on Device and Materials Reliability. 7:315-323

In this paper, Ta2O5 current instability in MIM and MIS capacitors is studied over several sample thicknesses with a current-versus-time measurement and low-frequency dielectric spectroscopy. Three types of phenomena are identified. The first one is

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1f9738a96fde986254d40af24fdacc68
https://doi.org/10.1109/tdmr.2007.901086

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14nm FDSOI upgraded device performance for ultra-low voltage operation

Autor: Michel Haond, J. Mazurier, S. Chhun, N. Degors, P. Maury, Emmanuel Josse, J.-P. Manceau, D. Barge, Olivier Weber, S. Lagrasta

Publikováno v: 2015 Symposium on VLSI Technology (VLSI Technology).

A performance upgrade of our 14nm FDSOI technology is reported in this paper. Compared to our previous 14nm FDSOI assessment, a −17% delay at the same leakage is demonstrated. We show that the AC performance of 28nm FDSOI at a 0.9V supply voltage i

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::90b729e10e2ecf3ac1008c1fd57955be
https://doi.org/10.1109/vlsit.2015.7223664

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A comparative mismatch study of the 20nm Gate-Last and 28nm Gate-First bulk CMOS technologies

Autor: A. Bajolet, Stephane Ricq, Lama Rahhal, Gerard Ghibaudo, Julien Rosa, J. P. Manceau, Sebastien Lassere

Publikováno v: Solid-State Electronics
Solid-State Electronics, Elsevier, 2015, 108, pp.53-60. ⟨10.1016/j.sse.2014.12.006⟩

In this work the threshold voltage ( V t ), the current gain factor ( β ), and the drain current ( I D ) mismatch trends for 20 nm Gate-Last bulk CMOS technology integrating High- k /metal gate are investigated. The reported results indicate that th

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a8b4debd9a673aeff24f7c1a856149f7
https://hal.archives-ouvertes.fr/hal-01947642

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Impact of TiN post-treatment on metal insulator metal capacitor performances

Autor: M. Proust, J-P. Manceau, Philippe Delpech, Raphael Clerc, A. Bajolet, Nicolas Gaillard, Gerard Ghibaudo, Sylvie Bruyere, Laurent Montès, J-C. Giraudin

Publikováno v: Microelectronic Engineering. 83:2189-2194

When deposited by chemical vapor deposition (CVD), TiN layers must be post-treated with N"2/H"2 plasma. Metal-insulator-metal (MIM) capacitors using CVD-TiN as electrodes and Al"2O"3 as insulator are studied from both electrical and physico-chemical

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1a30d1783b4536a5acc55407190b9921
https://doi.org/10.1016/j.mee.2006.10.004

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Modeling and optimization of series resistance of planar MIM capacitors

Autor: Philippe Delpech, Raphael Clerc, Gerard Ghibaudo, Sylvie Bruyere, S. Boret, J.-C. Giraudin, Laurent Montès, G. Pananakakis, E. Picollet, N. Segura, J.-P. Manceau, A. Bajolet

Publikováno v: Solid-State Electronics. 50:1244-1251

Integrated circuits for analog and telecom applications require metal insulator metal (MIM) capacitors with not only a high capacitance value (typically 5 nF/mm 2 ), but also a low series resistance R s . The optimization of this latter parameter is

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::81e8a2abfd44b7a06df83cbed9d27073
https://doi.org/10.1016/j.sse.2006.06.015

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14nm FDSOI technology for high speed and energy efficient applications

Autor: B. Le-Gratiet, G. Druais, Denis Rideau, Marie-Anne Jaud, J.-D. Chapon, D. Hoguet, M. Mellier, L. Babaud, Clement Pribat, Emmanuel Josse, D. Barge, S. Puget, J. Mazurier, L. Grenouillet, Nicolas Loubet, S. Zoll, Thierry Poiroux, Jerome Simon, S.P. Fetterolf, M. Bidaud, S. Chhun, M. Vinet, Quanwei Liu, R. Bianchini, E. Bernard, J.-F. Kruck, X. Gerard, C. Gaumer, A. Pofelski, Francois Andrieu, Mustapha Rafik, Olivier Weber, N. Guillot, Pascal Gouraud, F. Abbate, O. Faynot, N. Degors, Olivier Gourhant, Antoine Cros, L. Parmigiani, E. Petitprez, J. Lacord, Patrick Scheer, C. Monget, Michel Haond, Evelyne Richard, P. Maury, Bruce B. Doris, M. Celik, Daniel Benoit, Frederic Monsieur, E. Baylac, L. Clément, S. Lagrasta, Magali Gregoire, J.-P. Manceau, S. Lasserre, P. Perreau, P. Brun, C. Gallon, V. Beugin, Remi Beneyton, Eric Perrin, S. Delmedico, R. Bingert

Publikováno v: 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.

This paper presents a 14nm technology designed for high speed and energy efficient applications using strain-engineered FDSOI transistors. Compared to the 28nm FDSOI technology, this 14nm FDSOI technology provides 0.55× area scaling and delivers a 3

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::aedffd54e01f33ec4661fa88cc9e090c
https://doi.org/10.1109/vlsit.2014.6894343

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Mismatch trends in 20nm gate-last bulk CMOS technology

Autor: Lama Rahhal, J. P. Manceau, A. Bajolet, Gerard Ghibaudo, Sebastien Lassere, Stephane Ricq, Julien Rosa

Publikováno v: 2014 ULIS Proceedings
2014 15th International Conference on Ultimate Integration on Silicon (ULIS)
2014 15th International Conference on Ultimate Integration on Silicon (ULIS), Apr 2014, Stockholm, Sweden. pp.133-136, ⟨10.1109/ULIS.2014.6813916⟩

session poster; International audience; In this work Vt and β mismatch for the 20 nm Gate-last bulk CMOS technology are investigated for the first time. Our results indicate that the 20 nm Gate-last technology exhibits significant improvement in the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::008f7512935ce45695083d6e88138f65
https://hal.archives-ouvertes.fr/hal-02048981

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Impact of dynamic variability on the operation of CMOS inverter

Autor: Charalabos A. Dimitriadis, J. P. Manceau, E. G. Ioannidis, Sebastien Haendler, Gerard Ghibaudo

Publikováno v: Electronics Letters
Electronics Letters, IET, 2013, 49 (19), pp.214. ⟨10.1049/el.2013.1343⟩

The impact of dynamic variability due to low-frequency fluctuations on the operation of CMOS inverters, which constitute the basic component of SRAM cell, is investigated. The experimental methodology to characterise the effect of dynamic variability

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f0fed4303d18df6bb3739d3c73800e81
https://hal.archives-ouvertes.fr/hal-00994279

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Evolution of low frequency noise and noise variability through CMOS bulk technology nodes

Autor: E. G. Ioannidis, Charalabos A. Dimitriadis, Julien Rosa, Sebastien Haendler, Gerard Ghibaudo, A. Bajolet, J. P. Manceau

Publikováno v: Proceedings of the 2013 22nd International Conference on Noise and Fluctuations
ICNF 2013 (Int. Conf. on Noise and Fluctuations)
ICNF 2013 (Int. Conf. on Noise and Fluctuations), Jun 2013, Montpellier, France. pp.1-4, ⟨10.1109/ICNF.2013.6578985⟩

In this paper, we present a thorough investigation of low frequency noise (LFN) and statistical noise variability through CMOS bulk technologies manufactured in STMicroelectronics along the past 12 years. The experimental results are well interpreted

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b787e021569ac2fd1a19e9957565b520
https://hal.archives-ouvertes.fr/hal-01024616

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Characterization and 3D TCAD simulation of NOR-type flash non-volatile memories with emphasis on corner effects

Autor: Denis Rideau, Raphael Clerc, Alban Zaka, Herve Jaouen, Quentin Rafhay, J. P. Manceau, Davide Garetto, J. Singer, Erwan Dornel, Clement Tavernier, Nicolas Degors, C. Boccaccio

Publikováno v: Solid-State Electronics
Solid-State Electronics, Elsevier, 2011, 63 (1), pp.158-162. ⟨10.1016/j.sse.2011.05.017⟩

The impact of 3D device architecture in aggressively scaled embedded non-volatile memories has been investigated by means of experiments and 3D TCAD simulations. A complete 3D calibration methodology covering DC and transient operating regimes has be

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::18a1ef559718600cbfdea1898faad843
https://hal.archives-ouvertes.fr/hal-01959389

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