Zobrazeno 1 - 10
of 67
pro vyhledávání: '"J-M Debever"'
Autor:
Rubén Pérez, F. Thibaudau, Anne Charrier, Fernando Flores, J.-M. Debever, José Ortega, J.-M. Themlin
Publikováno v:
Progress in Surface Science. 67:299-307
Electron correlation effects for the two-dimensional electron gas associated with the surface bands of the Sn/Si(1 1 1)–3×3, 3×3, Sn/Ge(1 1 1)–3×3 and 3×3 reconstructions are analyzed. Unrestricted local-density-approximation (LDA) calculatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::073cae5505c4eefab3c069f992e60637
https://doi.org/10.1016/s0079-6816(01)00031-4
https://doi.org/10.1016/s0079-6816(01)00031-4
Autor:
Anne Charrier, J-M Debever, F. Thibaudau, Fernando Flores, Rubén Pérez, J-M Themlin, José Ortega
Publikováno v:
Journal of Physics: Condensed Matter. 13:L521-L528
The unoccupied electronic structure of the model interface Sn/Si(111)-α-(3)1/2 has been measured at room temperature (RT) using angle-resolved inverse photoemission spectroscopy (KRIPES). In addition to a partly occupied surface band crossing the Fe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40981f95e78b6b8a9fc63e35911cd645
https://doi.org/10.1088/0953-8984/13/22/112
https://doi.org/10.1088/0953-8984/13/22/112
Autor:
José Ortega, J.-M. Themlin, Rubén Pérez, J.-M. Debever, F. Thibaudau, Anne Charrier, Fernando Flores
Publikováno v:
Applied Surface Science. :195-200
Using angle-resolved inverse photoemission spectroscopy (KRIPES), we have investigated the unoccupied electronic structure of the model interface Sn/Si(1 1 1)-α- 3 at room temperature. In addition to a “metallic” surface state crossing the Fermi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97701c510a87800ac406c04e8674efe7
https://doi.org/10.1016/s0169-4332(01)00061-7
https://doi.org/10.1016/s0169-4332(01)00061-7
Publikováno v:
Applied Surface Science. :406-412
Due to the higher vapour pressure of silicon, silicon carbide surfaces annealed at high temperature under vacuum tend to graphitize. The comparison of graphite formation on the silicon and carbon terminations of 6H–SiC reveals significant differenc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed1cd3b4f6ab540d91c623e30f6ffb5c
https://doi.org/10.1016/s0169-4332(00)00224-5
https://doi.org/10.1016/s0169-4332(00)00224-5
Publikováno v:
Applied Surface Science. :375-379
This work presents a detailed comparison of the electronic properties of two phases (α and γ) of the prototypical Si(111)– 3 × 3 –Sn system, focussing on the empty surface states. The latter reconstruction has been studied at room temperature
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::018bed91c10a877cb2bb83fb1d0bf9a2
https://doi.org/10.1016/s0169-4332(00)00218-x
https://doi.org/10.1016/s0169-4332(00)00218-x
Autor:
J.-M. Themlin, Vladimir N. Strocov, Michael Rohlfing, J.-M. Debever, Peter Blaha, H. I. Starnberg, Ralph Claessen
Publikováno v:
Physical Review B. 61:4994-5001
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d05455e8e3b96cfdaa5ce2d0344ceaf2
https://doi.org/10.1103/physrevb.61.4994
https://doi.org/10.1103/physrevb.61.4994
Publikováno v:
Surface Science. 442:9-18
Silicon carbide surfaces annealed at high temperature under vacuum tend to graphitize. The gradual graphitization of the 6H-SiC (000 1 ) face (carbon termination) has been studied by angle-resolved inverse photoemission spectroscopy (KRIPES). The ini
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2d2b8b4ddc4fd4ac14a9e2d214a052d
https://doi.org/10.1016/s0039-6028(99)00891-2
https://doi.org/10.1016/s0039-6028(99)00891-2
Publikováno v:
Physical Review B. 58:16396-16406
When annealed at elevated temperatures under vacuum, silicon carbide surfaces show a tendency towards graphitization. Using the sensitivity of empty conduction-band states dispersion towards the structural quality of the overlayer, we have used angul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f862a030f78cd3d6e39920b2f5584b5
https://doi.org/10.1103/physrevb.58.16396
https://doi.org/10.1103/physrevb.58.16396
The $(\sqrt{3}\times\sqrt{3}){\rm R}30^{\circ}$-Reconstructed 6H–SiC(0001): A Semiconducting Surface
Publikováno v:
Surface Review and Letters. :193-197
k//-resolved inverse-photoemission spectroscopy of the [Formula: see text] reconstruction of 6H–SiC(0001) reveals a sharp surface state U located 1.10±0.05 eV above the Fermi level at the center of the surface Brillouin zone with a total bandwidth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb4418c0b330f9cc4bc2592c6999a78d
https://doi.org/10.1142/s0218625x98000360
https://doi.org/10.1142/s0218625x98000360
Publikováno v:
Europhysics Letters (EPL). 39:61-66
Applying k-resolved inverse photoemission (KRIPES) to the √3×√3 R30°-reconstructed 6H-SiC(0001) face, we have observed a sharp surface state U located at 1.10 ± 0.05 eV above the Fermi level at the centre of the surface Brillouin zone. Its ban
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::870e153a599b4b8bfef20f703c2fd044
https://doi.org/10.1209/epl/i1997-00314-9
https://doi.org/10.1209/epl/i1997-00314-9