Zobrazeno 1 - 10
of 12
pro vyhledávání: '"J-B. Pin"'
Autor:
R. Alcotte, M. Martin, J. Moeyaert, R. Cipro, S. David, F. Bassani, F. Ducroquet, Y. Bogumilowicz, E. Sanchez, Z. Ye, X. Y. Bao, J. B. Pin, T. Baron
Publikováno v:
APL Materials, Vol 4, Iss 4, Pp 046101-046101-6 (2016)
Metal organic chemical vapor deposition of GaAs on standard nominal 300 mm Si(001) wafers was studied. Antiphase boundary (APB) free epitaxial GaAs films as thin as 150 nm were obtained. The APB-free films exhibit an improvement of the room temperatu
Externí odkaz:
https://doaj.org/article/b57d9be9181d480fb9c632881acc3157
Autor:
C. Scibetta, S. Beaurepaire, F. Fournel, A. Roman, S. Chevalliez, C. Fenouillet-Beranger, X. Garros, Xavier Federspiel, J. Aubin, V. Larrey, Perrine Batude, F. Kouemeni-Tchouake, F. Ponthenier, J-B. Pin, Daniel Scevola, Lucile Arnaud, F. Aussenac, C. Guerin, P. Acosta-Alba, V. Mazzocchi, Sebastien Kerdiles, H. Fontaine, Shay Reboh, P. Perreau, Sylvain Maitrejean, Laurent Brunet, N. Rambal, M. Vinet, Pascal Besson, Christophe Morales, T. Lardin, V. Balan, Vincent Jousseaume, D. Ney, F. Mazen, Francois Andrieu
Publikováno v:
2018 IEEE International Electron Devices Meeting (IEDM)
The 3D sequential integration, of active devices requires to limit the thermal budget of top tier processing to low temperature (LT) (i.e. $\mathrm{T}_{\text{TOP}}=500^{\circ}\mathrm{C})$ in order to ensure the stability of the bottom devices. Here w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::206d35153ba5f44ca9aa06493e9c2b57
Autor:
Bogumilowicz, Y., Martin, M., Alcotte, R., Cipro, R., A-M, Papon, Moeyaert, J., David, S., Franck BASSANI, Cerba, T., Bao, X. Y., J-B, Pin, Sanchez, E., J-M, Hartmann, Baron, T.
Publikováno v:
The 10th International Conference on Silicon Epitaxy and heterostructures (ICSI-10)
The 10th International Conference on Silicon Epitaxy and heterostructures (ICSI-10), 2017, Warwick, United Kingdom
HAL
The 10th International Conference on Silicon Epitaxy and heterostructures (ICSI-10), 2017, Warwick, United Kingdom
HAL
International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::d0f597733a1e321bf7c089351b8ce1c0
https://hal.univ-grenoble-alpes.fr/hal-01891345
https://hal.univ-grenoble-alpes.fr/hal-01891345
Autor:
R. Alcotte, T. Baron, Y. Bogumilowicz, Pascal Pochet, Franck Bassani, R. Cipro, J. Moeyaert, J. B. Pin, Sylvain David, Errol Antonio C. Sanchez, X.Y. Bao, M. Martin, Damien Caliste, T. Cerba, Z. Ye
Publikováno v:
Applied Physics Letters
Applied Physics Letters, 2016, 109 (25), pp.253103. ⟨10.1063/1.4972394⟩
Applied Physics Letters, American Institute of Physics, 2016, 109 (25), pp.253103. ⟨10.1063/1.4972394⟩
Applied Physics Letters, 2016, 109 (25), pp.253103. ⟨10.1063/1.4972394⟩
Applied Physics Letters, American Institute of Physics, 2016, 109 (25), pp.253103. ⟨10.1063/1.4972394⟩
The integration of III-V on silicon is still a hot topic as it will open up a way to co-integrate Si CMOS logic with photonic vices. To reach this aim, several hurdles should be solved, and more particularly the generation of antiphase boundaries (AP
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c91c86755b1de6be3fa0de1c4485da5d
https://cea.hal.science/cea-01851579
https://cea.hal.science/cea-01851579
Autor:
Y. Bogumilowicz, J. B. Pin, Franck Bassani, R. Alcotte, Thierry Baron, Sylvain David, Mickael Martin, Errol Antonio C. Sanchez, R. Cipro, Xinyu Bao, Z. Ye, F. Ducroquet, J. Moeyaert
Publikováno v:
APL Materials, Vol 4, Iss 4, Pp 046101-046101-6 (2016)
APL Materials
APL Materials, AIP Publishing 2016, 4 (4), pp.046101. ⟨10.1063/1.4945586⟩
APL Materials, 2016, 4 (4), pp.046101. ⟨10.1063/1.4945586⟩
APL Materials
APL Materials, AIP Publishing 2016, 4 (4), pp.046101. ⟨10.1063/1.4945586⟩
APL Materials, 2016, 4 (4), pp.046101. ⟨10.1063/1.4945586⟩
International audience; Metal organic chemical vapor deposition of GaAs on standard nominal 300 mm Si(001) wafers was studied. Antiphase boundary (APB) free epitaxial GaAs films as thin as 150 nm were obtained. The APB-free films exhibit an improveme
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4e27b33ee6dbd696fd928e96a3b6b3ed
https://doaj.org/article/b57d9be9181d480fb9c632881acc3157
https://doaj.org/article/b57d9be9181d480fb9c632881acc3157
Autor:
Y. Bogumilowicz, Jean-Michel Hartmann, R. Alcotte, J. Moeyaert, R. Cipro, J. B. Pin, Z. Ye, Xinyu Bao, Errol Antonio C. Sanchez, Thierry Baron, Mickael Martin, Franck Bassani
Publikováno v:
Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2015, 107 (21), pp.212105. ⟨10.1063/1.4935943⟩
Applied Physics Letters, 2015, 107 (21), pp.212105. ⟨10.1063/1.4935943⟩
Applied Physics Letters, American Institute of Physics, 2015, 107 (21), pp.212105. ⟨10.1063/1.4935943⟩
Applied Physics Letters, 2015, 107 (21), pp.212105. ⟨10.1063/1.4935943⟩
International audience; We have obtained Anti-Phase Boundary (APB) free GaAs epilayers on “quasi-nominal” (001) silicon substrates, while using a thick germanium strain relaxed buffer between the GaAs layer and the silicon substrate in order to a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ad7e7b06049194de5125a3f7679b6379
https://doi.org/10.1063/1.4935943
https://doi.org/10.1063/1.4935943
Autor:
C. Vizioz, Mickael Martin, Errol Antonio C. Sanchez, Z. Ye, N. Allouti, Jean-Paul Barnes, J. B. Pin, Névine Rochat, V. Loup, Nicolas Chauvin, Xinyu Bao, Y. Bogumilowicz, Franck Bassani, V. Gorbenko, Thierry Baron, J. Moeyaert, S. David, R. Cipro
Publikováno v:
Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2014, 104 (26), pp.262103. ⟨10.1063/1.4886404⟩
Applied Physics Letters, American Institute of Physics, 2014, 104 (26), pp.262103. ⟨10.1063/1.4886404⟩
Metal organic chemical vapor deposition of GaAs, InGaAs, and AlGaAs on nominal 300 mm Si(100) at temperatures below 550 °C was studied using the selective aspect ratio trapping method. We clearly show that growing directly GaAs on a flat Si surface
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::737be04822c7ec4aea5a7e24866f70b5
https://doi.org/10.1063/1.4886404
https://doi.org/10.1063/1.4886404
Autor:
C. Comboroure, M. Zussy, L. Pasini, N. Rambal, J.-B. Pin, François Martin, V. Balan, Perrine Batude, C. Vizioz, J.M. Hartmann, Virginie Loup, N. Allouti, Sébastien Barnola, A. Duboust, Frédéric Mazen, O. Faynot, Louis Hutin, Mazzocchi, R. Berthelon, A. Ayres, Gilles Sicard, F. Deprat, Sebastien Hentz, J.-P. Colinge, Francois Andrieu, B. Mathieu, S. Beaurepaire, J. Micout, F. Ponthenier, E. Vianello, F. Fournel, O. Rozeau, E. Avelar Mercado, V. Ripoche, V. Beugin, Cristiano Santos, M.-P. Samson, Pascal Vivet, D. Larmagnac, S. Barraud, C. Euvrard-Colnat, Sebastien Kerdiles, M. Vinet, Benoit Sklenard, P. Acosta Alba, Sebastien Thuries, C. Fenouillet-Beranger, Philippe Rodriguez, X. Garros, Fabrice Nemouchi, R. Gassilloud, O. Billoint, Julien Arcamone, Pascal Besson, Didier Lattard, M. Casse, Laurent Brunet, C.-M. V. Lu, Bernard Previtali
Publikováno v:
2017 IEEE International Electron Devices Meeting (IEDM)
3D Sequential Integration (3DSI) with ultra-small 3D contact pitch (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8916f9812bae1365018dd5e6a7aa88d0
Conference
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Conference
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