Zobrazeno 1 - 10
of 492
pro vyhledávání: '"J Widiez"'
Autor:
F. T. Armand Pilon, A. Lyasota, Y.-M. Niquet, V. Reboud, V. Calvo, N. Pauc, J. Widiez, C. Bonzon, J. M. Hartmann, A. Chelnokov, J. Faist, H. Sigg
Publikováno v:
Nature Communications, Vol 10, Iss 1, Pp 1-8 (2019)
Germanium (based) lasers are a promising route towards a fully CMOS-compatible light source, key to the further development of silicon photonics. Here, the authors realize lasing from strained germanium microbridges up to 100 K, finding a quantum eff
Externí odkaz:
https://doaj.org/article/d5eb7b334da04a17bdb97efaf5799180
Autor:
F. T. Armand Pilon, Y-M. Niquet, J. Chretien, N. Pauc, V. Reboud, V. Calvo, J. Widiez, J. M. Hartmann, A. Chelnokov, J. Faist, H. Sigg
Publikováno v:
Physical Review Research, Vol 4, Iss 3, p 033050 (2022)
Efficient and cost-effective Si-compatible lasers are a longstanding wish of the optoelectronic industry. In principle, there are two options. For many applications, lasers based on III-V compounds provide compelling solutions, even if the integratio
Externí odkaz:
https://doaj.org/article/0aa19fe0b7e04df7bffa2fa518658e9b
Autor:
W. Schwarzenbach, S. Rouchier, G. Berre, R. Boulet, O. Ledoux, E. Cela, A. Drouin, A. Chapelle, S. Monnoye, H. Biard, K. Alassaad, L. Viravaux, N. Ben Mohamed, D. Radisson, G. Picun, G. Lavaitte, A. Bouville-Lallart, J. Roi, J. Widiez, K. Abadie, E. Rolland, F. Fournel, G. Gelineau, F. Mazen, A. Moulin, C. Moulin, D. Delprat, N. Daval, S. Odoul, P. Sandri, C. Maleville
Publikováno v:
2022 International Conference on IC Design and Technology (ICICDT).
Autor:
N. Daval, A. Drouin, H. Biard, L. Viravaux, D. Radisson, S. Rouchier, G. Gaudin, J. Widiez, F. Allibert, E. Rolland, K. Vladimirova, G. Gelineau, N. Troutot, C. Navone, G. Berre, D. Bosch, Y.L Leow, A. Duboust, J-M. Bethoux, R. Boulet, A. Chapelle, E. Cela, G. Lavaitte, A. Bouville-Lallart, S. Bhargava, W. Schwarzenbach, C. Maddalon, I. Radu, S. Odoul, D. Delprat, O. Bonnin, C. Maleville
Publikováno v:
2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
Autor:
C. Masante, J. de Vecchy, F. Mazen, F. Milesi, L. Di Cioccio, J. Pernot, F. Lloret, D. Araujo, J.C. Pinero, N. Rochat, F. Pierre, F. Servant, J. Widiez
Publikováno v:
Diamond and Related Materials
Diamond and Related Materials, 2022, 126, pp.109085. ⟨10.1016/j.diamond.2022.109085⟩
Diamond and Related Materials, 2022, 126, pp.109085. ⟨10.1016/j.diamond.2022.109085⟩
International audience; The effect of H$^+$ implantation and annealing of diamond (100) monocrystalline substrates has been studied by ToFSIMS,cathodoluminescence, transmission spectroscopy and TEM. Blistering conditions suitable for the Smart Cut$^{
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::70affd3371ee9448f20010637dba3f09
https://cea.hal.science/cea-03714349
https://cea.hal.science/cea-03714349
Autor:
F. T. Armand Pilon, Y-M Niquet, J. Chretien, N. Pauc, V. Reboud, V. Calvo, J. Widiez, J.M. Hartmann, A. Chelnokov, J. Faist, H. Sigg
Publikováno v:
2021 IEEE 17th International Conference on Group IV Photonics (GFP).
Publikováno v:
Semiconductor Science and Technology. 37:045012
This article deals with Si/Ge heterostucture manufacturing using covalent bonding, and its application to the layer transfer of a thin germanium film. At first, bow simulations of the heterostructure are discussed, in order to determine the temperatu
Autor:
Christelle Veytizou, Christophe Figuet, Nicolas Baumel, Pascal Besson, Frédéric Mazen, Isabelle Huyet, Catherine Tempesta, Walter Schwarzenbach, Jean-Michel Hartmann, J. Widiez, Virginie Loup, Ludovic Ecarnot
Publikováno v:
ECS Transactions
Bulk silicon device technologies are reaching fundamental scaling limitations. The 28 nm and 22 nm technology nodes have seen the introduction of Ultra-Thin Body and Buried Oxide Fully Depleted SOI (UTBB-FDSOI) [1] and FinFETs [2], respectively. Full
Autor:
J. Widiez, M. Bertrand, C. Morales, M. Cordeau, P. Gergaud, A. Grenier, J.-M. Hartmann, I. Degirmencioglu, A. Chelnokov, V. Reboud
Publikováno v:
Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials.
Autor:
J.M. Hartmann, T. Zabel, Ivan Duchemin, A. Chelnokov, Jérôme Faist, Yann-Michel Niquet, Hans Sigg, François Rieutord, Kevin Guilloy, J. Rothman, Alban Gassenq, J. Widiez, D. Rouchon, Samuel Tardif, V. Reboud, Mathieu Bertrand, Nicolas Pauc, V. Calvo
Publikováno v:
SILICON PHOTONICS XII
SILICON PHOTONICS XII, Jan 2017, SAN FRANCISCO, United States. ⟨10.1117/12.2251790⟩
SILICON PHOTONICS XII, Jan 2017, SAN FRANCISCO, United States. ⟨10.1117/12.2251790⟩
The realization of efficient laser sources compatible with the microelectronics industry is currently one of the main challenges for silicon photonics. As Ge is CMOS compatible, the interest of using tensile strain or n-type doping to improve its lig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1c426fc51aa4db8ffcaa928960e433f8
https://hal.univ-grenoble-alpes.fr/hal-01974439
https://hal.univ-grenoble-alpes.fr/hal-01974439