Zobrazeno 1 - 10
of 17
pro vyhledávání: '"J T Edmond"'
Autor:
D. J. Easton, J. T. Edmond
Publikováno v:
Physica Status Solidi (a). 81:K103-K107
Autor:
M. H. El-Fouly, J. T. Edmond
Publikováno v:
Physica Status Solidi (a). 21:K43-K47
Electrical conductivity of some chalcogenide glasses as a function of electric field and temperature
Autor:
J. T. Edmond, M. H. El-Fouly
Publikováno v:
Physica Status Solidi (a). 48:395-405
Measurements are made of the electrical conductivity (σ) of glasses in the system As2SexTe3-x at low fields (F) down to about 104 Vm−1, and at high fields up to more than 108 Vm−1 for various ranges of temperature (T) above and below room temper
Publikováno v:
Journal of Physics E: Scientific Instruments. 1:373-378
Liquid semiconductors are considered for use as temperature measuring elements in nuclear reactors. Several possible compositions in the system As-S-Se-Te-Ge have been studied. They are liquid above about 300°C, have temperature coefficients of resi
Autor:
J T Edmond
Publikováno v:
British Journal of Applied Physics. 17:979-989
Measurements have been made of the electrical conductivity, optical absorption and thermoelectric power of materials in the system As2Se3-As2Te3 and of As2Se3. Tl2Te, some in the liquid and some in the glassy state. At moderate temperatures these are
Autor:
J T Edmond
Publikováno v:
Proceedings of the Physical Society. 73:622-627
Some aspects of the behaviour of group II, IV and VI elements as impurities in InSb, InAs, GaSb and GaAs have been studied. It is of particular interest to know whether these behave as donors or acceptors. In some cases, which are discussed, e.g. mag
Autor:
J. T. Edmond
Publikováno v:
Physica Status Solidi (a). 3:K129-K133
Autor:
J. T. Edmond, R. Barrie
Publikováno v:
Journal of Electronics and Control. 1:161-170
Publikováno v:
British Journal of Applied Physics. 6:217-220
General principles in the measurement of magnetic fields by use of the Hall effect are considered, and it is shown that the efficiency of Hall generator devices is proportional to the square of the carrier mobility in the material used. Indium antimo
Autor:
J T Edmond, M W Redfearn
Publikováno v:
Proceedings of the Physical Society. 81:380-382