Zobrazeno 1 - 9
of 9
pro vyhledávání: '"J T, Sadowski"'
Publikováno v:
Physical Review B. 105
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9fb09d911cd69c99a9133e4e87bc4cc7
https://doi.org/10.1103/physrevb.105.245114
https://doi.org/10.1103/physrevb.105.245114
Publikováno v:
New Journal of Physics, Vol 16, Iss 1, p 013024 (2014)
The properties of epitaxial graphene grown via thermal decomposition of silicon carbide are extremely sensitive to annealing conditions. Here we show how the surface morphologies resulting from a range of UHV growth protocols affect the electron scat
Externí odkaz:
https://doaj.org/article/5cc2b27dd4b849c7b9da60d46d0828b5
Autor:
Y. Kawazoe, Yasunori Fujikawa, A. I. Oreshkin, J. T. Sadowski, R. Z. Bakhtizin, Vijay Kumar, Toshio Sakurai, Palanichamy Murugan
Publikováno v:
Fullerenes, Nanotubes and Carbon Nanostructures. 18:369-375
Scanning tunneling microscopy has been used to spatially image individual fluorofullerene C60F18 molecules on Si(111)-7×7 surface. The images have been interpreted with the help of ab initio calculations. C60F18 molecules interact with the surface w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58e3688d5005501b497974d70994546a
https://doi.org/10.1080/1536383x.2010.487409
https://doi.org/10.1080/1536383x.2010.487409
Autor:
T, Yilmaz, I, Pletikosić, A P, Weber, J T, Sadowski, G D, Gu, A N, Caruso, B, Sinkovic, T, Valla
Publikováno v:
Physical review letters. 113(6)
Proximity-induced superconductivity in a 3D topological insulator represents a new avenue for observing zero-energy Majorana fermions inside vortex cores. Relatively small gaps and low transition temperatures of conventional s-wave superconductors pu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::d6bdeda14a3d02ec0048e5206ff1ccfa
https://pubmed.ncbi.nlm.nih.gov/25148345
https://pubmed.ncbi.nlm.nih.gov/25148345
Publikováno v:
Bulletin of the Russian Academy of Sciences: Physics. 73:883-885
The morphology and atomic structure of C60 fullerene films on the Bi(0001)/Si(111)−7 × 7 surface with different coverages have been studied by scanning tunneling microscopy and spectroscopy and low-energy electron microscopy in high vacuum. It is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b3b2f1b2a6f5dcde94bd1f11f9e41a0
https://doi.org/10.3103/s1062873809070065
https://doi.org/10.3103/s1062873809070065
Autor:
M. A. Herman, J. T. Sadowski
Publikováno v:
Crystal Research and Technology. 34:153-162
A concise discussion concerning the UHV ALE growth of ternary II-VI compounds is presented in this paper. Simultaneous reflection mass spectrometry (REMS) and reflection high energy electron diffraction (RHEED) measurements of the surface kinetic and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a384e65d18cca9d514b1abb266569f9
https://doi.org/10.1002/(sici)1521-4079(199902)34:2<153::aid-crat153>3.0.co
https://doi.org/10.1002/(sici)1521-4079(199902)34:2<153::aid-crat153>3.0.co
Autor:
Yasunori Fujikawa, Toshio Sakurai, Takahisa Ohno, Shin Yaginuma, J. T. Sadowski, A. I. Oreshkin, Mineo Saito, Tadaaki Nagao
Publikováno v:
International Journal of Nanoscience. :399-401
The results of investigation of the room temperature growth of thin Bi films on Si (111)-7 × 7 are present. In the initial stage of Bi film growth the rotationally disordered, pseudo-cubic, Bi {012} islands with a uniform height of 13 Å are formed.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8263bb06901cefab5b877b3b202fb37
https://doi.org/10.1142/s0219581x0700481x
https://doi.org/10.1142/s0219581x0700481x
Autor:
Yasunori Fujikawa, J. T. Sadowski, G. E. Thayer, Rudolf M. Tromp, Gen Sazaki, Mineo Saito, Tadaaki Nagao, Toshio Sakurai, Shin Yaginuma, Kazuo Nakajima, Takahisa Ohno
Publikováno v:
AIP Conference Proceedings.
Growth of thin metal films on semiconductors has long been subjected to extensive experimental and theoretical studies. As the applicability of well‐ordered structures in electronic, optical or magnetic devices depends significantly on their size a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ad6d92493a193b4889ad54bb522b140
https://doi.org/10.1063/1.1639777
https://doi.org/10.1063/1.1639777
Autor:
A. I. Oreshkin, Shuji Hasegawa, S. Yaginuma, Tadaaki Nagao, Takahisa Ohno, J. T. Sadowski, M. Saito, Toshio Sakurai
Publikováno v:
Scopus-Elsevier
Growth of thin metal films on semiconductors has been always an important subject for extensive experimental and theoretical studies. As the applicability of well-ordered nanostructures in electronic applications depends strongly on their size and di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e8edc378f91b8ff2b6d4cf1e789249f5
http://www.scopus.com/inward/record.url?eid=2-s2.0-0347629296&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-0347629296&partnerID=MN8TOARS
