Zobrazeno 1 - 10
of 1 096
pro vyhledávání: '"J T, Sadowski"'
Publikováno v:
Physical Review B. 105
Publikováno v:
New Journal of Physics, Vol 16, Iss 1, p 013024 (2014)
The properties of epitaxial graphene grown via thermal decomposition of silicon carbide are extremely sensitive to annealing conditions. Here we show how the surface morphologies resulting from a range of UHV growth protocols affect the electron scat
Externí odkaz:
https://doaj.org/article/5cc2b27dd4b849c7b9da60d46d0828b5
Autor:
Y. Kawazoe, Yasunori Fujikawa, A. I. Oreshkin, J. T. Sadowski, R. Z. Bakhtizin, Vijay Kumar, Toshio Sakurai, Palanichamy Murugan
Publikováno v:
Fullerenes, Nanotubes and Carbon Nanostructures. 18:369-375
Scanning tunneling microscopy has been used to spatially image individual fluorofullerene C60F18 molecules on Si(111)-7×7 surface. The images have been interpreted with the help of ab initio calculations. C60F18 molecules interact with the surface w
Autor:
Schütze, Adrian1,2 (AUTHOR), Schädlich, Philip1,2 (AUTHOR), Seyller, Thomas1,2 (AUTHOR), Göhler, Fabian1,2 (AUTHOR) fabian.goehler@physik.tu-chemnitz.de
Publikováno v:
Small Structures. Dec2024, Vol. 5 Issue 12, p1-13. 13p.
Autor:
Pei, Ben1,2,3 (AUTHOR), Zhou, Yongsen1,2,3 (AUTHOR), Yang, Yu1,2,3 (AUTHOR), Ma, Jiaxiang4 (AUTHOR), Cao, Rangli4 (AUTHOR), Huang, Wen1,2,3 (AUTHOR), Ouyang, Liliang1,2,3 (AUTHOR), Mi, Shengli4 (AUTHOR), Xiong, Zhuo1,2,3 (AUTHOR) xiongzhuo@tsinghua.edu.cn
Publikováno v:
Small Science. Nov2024, Vol. 4 Issue 11, p1-11. 11p.
Autor:
T, Yilmaz, I, Pletikosić, A P, Weber, J T, Sadowski, G D, Gu, A N, Caruso, B, Sinkovic, T, Valla
Publikováno v:
Physical review letters. 113(6)
Proximity-induced superconductivity in a 3D topological insulator represents a new avenue for observing zero-energy Majorana fermions inside vortex cores. Relatively small gaps and low transition temperatures of conventional s-wave superconductors pu
Publikováno v:
Bulletin of the Russian Academy of Sciences: Physics. 73:883-885
The morphology and atomic structure of C60 fullerene films on the Bi(0001)/Si(111)−7 × 7 surface with different coverages have been studied by scanning tunneling microscopy and spectroscopy and low-energy electron microscopy in high vacuum. It is
Autor:
M. A. Herman, J. T. Sadowski
Publikováno v:
Crystal Research and Technology. 34:153-162
A concise discussion concerning the UHV ALE growth of ternary II-VI compounds is presented in this paper. Simultaneous reflection mass spectrometry (REMS) and reflection high energy electron diffraction (RHEED) measurements of the surface kinetic and
Autor:
Yasunori Fujikawa, Toshio Sakurai, Takahisa Ohno, Shin Yaginuma, J. T. Sadowski, A. I. Oreshkin, Mineo Saito, Tadaaki Nagao
Publikováno v:
International Journal of Nanoscience. :399-401
The results of investigation of the room temperature growth of thin Bi films on Si (111)-7 × 7 are present. In the initial stage of Bi film growth the rotationally disordered, pseudo-cubic, Bi {012} islands with a uniform height of 13 Å are formed.
Autor:
Gao, Qian1 (AUTHOR), Yan, Qimin2 (AUTHOR), Hu, Zhenpeng1 (AUTHOR) zphu@nankai.edu.cn, Chen, Lan3 (AUTHOR)
Publikováno v:
Advanced Science. 10/9/2024, Vol. 11 Issue 37, p1-8. 8p.