Zobrazeno 1 - 4
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pro vyhledávání: '"J S Cabaço"'
Autor:
S Magalhães, J S Cabaço, O Concepción, D Buca, M Stachowicz, F Oliveira, M F Cerqueira, K Lorenz, E Alves
Publikováno v:
Journal of Physics D: Applied Physics 56(2023), 245102
In the present work, the importance of determining the strain states of semiconductor compounds with high accuracy is demonstrated. For the matter in question, new software titled LAPAs, the acronym for LAttice PArameters is presented. The lattice pa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9cc36ec9d642a5cb3d3c1bb6316c1222
https://doi.org/10.1088/1361-6463/acc597
https://doi.org/10.1088/1361-6463/acc597
Publikováno v:
CrystEngComm. 23:3308-3318
A new software package titled Multiple Reflection Optimization for X-ray Diffraction (MROX) to simulate and fit multiple reflections simultaneously, as well as single reflections is presented. The simulation employs the recursive solution of the dyna
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b91a08bb98756a91bd44fc7c9dc1db2b
https://doi.org/10.1039/d1ce00204j
https://doi.org/10.1039/d1ce00204j
Publikováno v:
Journal of Physics D: Applied Physics. 54:245301
In this work, high quality AlGaN layers, grown by metal organic chemical vapour deposition, on a commercial c-sapphire substrate, were implanted at a fluence of 1 × 10 14 A r + ⋅ c m − 2 . Implantation was performed for energies between 25 and 2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e818a2559715f20c25adf6840520df1c
https://doi.org/10.1088/1361-6463/abee44
https://doi.org/10.1088/1361-6463/abee44
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