Zobrazeno 1 - 5
of 5
pro vyhledávání: '"J Ribeyron, P."'
Autor:
J Ribeyron, P., Munoz, D., Jean-Paul Kleider, Wilfried Favre, Cabarrocas, Pere Roca I., Labrune, M., Geerligs, B., Weeber, A., Späth, M., Sark, W. G. J. H. M., Schüttauf, J. A., Rath, J. K., Schropp, R. E. I., Tucci, M., Iullis, S., Gordon, I., Sullivan, B. O., Wolf, S., Schulze, T. F., Lars Korte
Publikováno v:
Proceedings of 26th European Photovoltaic Solar Energy Conference
26th EU PVSEC
26th EU PVSEC, Sep 2011, Hambourg, Germany
HAL
26th EU PVSEC
26th EU PVSEC, Sep 2011, Hambourg, Germany
HAL
LGEP 2011 ID = 789; International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::4d92a561b2dc7e4c5d23cf6324481a13
https://centralesupelec.hal.science/hal-00710781
https://centralesupelec.hal.science/hal-00710781
Autor:
Silvia Martin de Nicolas, Wilfried Favre, Ozanne, S., Munoz, D., Jean-Paul Kleider, J Ribeyron, P.
Publikováno v:
Proceedings of 24th International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS24) 2011
ICANS24
ICANS24, Aug 2011, Nara, Japan
HAL
ICANS24
ICANS24, Aug 2011, Nara, Japan
HAL
LGEP 2011 ID = 784; International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::b51554372c9469c629c19fb9a5c4d381
https://centralesupelec.hal.science/hal-00710776
https://centralesupelec.hal.science/hal-00710776
Publikováno v:
Proceedings of 23rd International Conference on Amorphous and Nanocrystalline Semiconductors
23rd International Conference on Amorphous and Nanocrystalline Semiconductors-ICANS23
23rd International Conference on Amorphous and Nanocrystalline Semiconductors-ICANS23, 2009, Utrecht, Netherlands
physica status solidi (c)
physica status solidi (c), 2010, 7 (3), pp.1033-1036
physica status solidi (c), Wiley, 2010, 7 (3), pp.1033-1036
HAL
23rd International Conference on Amorphous and Nanocrystalline Semiconductors-ICANS23
23rd International Conference on Amorphous and Nanocrystalline Semiconductors-ICANS23, 2009, Utrecht, Netherlands
physica status solidi (c)
physica status solidi (c), 2010, 7 (3), pp.1033-1036
physica status solidi (c), Wiley, 2010, 7 (3), pp.1033-1036
HAL
LGEP 2010 ID = 596; International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::4fbf59c27d61004eacdcc1331a3ce074
https://centralesupelec.hal.science/hal-00446014
https://centralesupelec.hal.science/hal-00446014
Publikováno v:
Materials Science and Engineering: B
Materials Science and Engineering: B, Elsevier, 2009, 159, pp. 291-294
HAL
Materials Science and Engineering: B, 2009, 159, pp. 291-294
Materials Science and Engineering: B, Elsevier, 2009, 159, pp. 291-294
HAL
Materials Science and Engineering: B, 2009, 159, pp. 291-294
ID = 443; International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::102c723d817421977bab04440f5ea1d2
https://hal-supelec.archives-ouvertes.fr/hal-00445960
https://hal-supelec.archives-ouvertes.fr/hal-00445960
Publikováno v:
The Lens
25th European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion, 6-10 September 2010, Valencia, Spain; 2255-2258
In heterojunction devices, the ITO front layer is used as an antireflecti
In heterojunction devices, the ITO front layer is used as an antireflecti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0535e8da9d9b7bc92488ffe16653cc17
https://www.lens.org/080-786-930-774-053
https://www.lens.org/080-786-930-774-053