Zobrazeno 1 - 10
of 20
pro vyhledávání: '"J Raynien, Kwo"'
Autor:
Tun-Wen Pi, Chao-Kai Cheng, Yi-Ting Cheng, Chiu-Ping Cheng, Hsien-Wen Wan, J. Raynien Kwo, Minghwei Hong
Publikováno v:
Applied Physics Express. 13:085504
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::171a1eb3a0944b7000bb84d4c1b4a9e6
https://doi.org/10.35848/1882-0786/ab9f62
https://doi.org/10.35848/1882-0786/ab9f62
Autor:
Tsung-Shiew Huang, Yi-Jun Lee, Chih-Hsun Lee, Chia-Hung Hsu, Shao-Yun Wu, Minghwei Hong, Te-Yang Lai, Pen Chang, J. Raynien Kwo, Wen-Hsin Chang
Publikováno v:
ACS Applied Materials & Interfaces. 5:1436-1441
High quality nanometer-thick Gd2O3 and Y2O3 (rare-earth oxide, R2O3) films have been epitaxially grown on GaN (0001) substrate by molecular beam epitaxy (MBE). The R2O3 epi-layers exhibit remarkable thermal stability at 1100 °C, uniformity, and high
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::85173bddb37abb5c32045709662317d3
https://doi.org/10.1021/am302881y
https://doi.org/10.1021/am302881y
Autor:
Chih-ping Chen, Pei-chun Tsai, Yaochung Chang, Minghwei Hong, M. L. Huang, Tsung-Da Lin, J. Raynien Kwo
Publikováno v:
Japanese Journal of Applied Physics. 46:3167-3180
Research efforts on achieving low interfacial density of states (Dit) as well as low electrical leakage currents on GaAs-based III–V compound semiconductors are reviewed. Emphasis is placed on ultra high vacuum (UHV) deposited Ga2O3(Gd2O3) and atom
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f209f971e3e354279d5f6eb160770e6c
https://doi.org/10.1143/jjap.46.3167
https://doi.org/10.1143/jjap.46.3167
Publikováno v:
ECS Transactions. 3:425-440
Ga2O3(Gd2O3), the novel oxide, which was electron-beam evaporated from a gallium- gadolinium-garnet target in UHV, has unpinned the GaAs Fermi level. Systematic heat treatments under various gases and temperatures were studied to achieve low leakage
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33c54b8fa4c86346d2548a07d9d7ef86
https://doi.org/10.1149/1.2356302
https://doi.org/10.1149/1.2356302
Autor:
Robert L. Opila, Yves J. Chabal, B. W. Busch, David A. Muller, Olivier Pluchery, Eric Garfunkel, J. Raynien Kwo
Publikováno v:
MRS Bulletin. 27:206-211
Continued scaling of microelectronic devices is demanding that alternatives to SiO2 as the gate dielectric be developed soon. This in turn has placed enormous pressure on the abilities of physical characterization techniques to address critical issue
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6eda6c7fd4c1b8de6f92a4523e3aa357
https://doi.org/10.1557/mrs2002.72
https://doi.org/10.1557/mrs2002.72
Autor:
Wen-Hsin, Chang, Shao-Yun, Wu, Chih-Hsun, Lee, Te-Yang, Lai, Yi-Jun, Lee, Pen, Chang, Chia-Hung, Hsu, Tsung-Shiew, Huang, J Raynien, Kwo, Minghwei, Hong
Publikováno v:
ACS applied materialsinterfaces. 5(4)
High quality nanometer-thick Gd₂O₃ and Y₂O₃ (rare-earth oxide, R₂O₃) films have been epitaxially grown on GaN (0001) substrate by molecular beam epitaxy (MBE). The R₂O₃ epi-layers exhibit remarkable thermal stability at 1100 °C, unif
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::0ad0a14e0f9db43e8e97d025e0db94af
https://pubmed.ncbi.nlm.nih.gov/23360590
https://pubmed.ncbi.nlm.nih.gov/23360590
Autor:
Yen-Hsun Lin, Keng-Yung Lin, Tsong-Wen Chang, J. Raynien Kwo, Fu Chien-Hua, Minghwei Hong, Chen Kuan-Hsiung
Publikováno v:
Applied Physics Express. 9:081501
A low interfacial trap density (D it) of 2.2 × 1011 eV−1 cm−2 has been achieved with an atomic layer deposited (ALD) single crystal Y2O3 epitaxially on n-GaAs(001), along with a small frequency dispersion of 10.3% (2.6%/decade) at the accumulati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e221bcd291c901538896393fca6f028
https://doi.org/10.7567/apex.9.081501
https://doi.org/10.7567/apex.9.081501
Autor:
Chia-Hung Hsu, Wen Hsin Chang, J. Raynien Kwo, Pen Chang, Chih Hsun Lee, Yi Jun Lee, J. Minghuang Hong, Minghwei Hong, Chiung Chi Tsai, Yao Chung Chang, M. L. Huang
Publikováno v:
Advanced materials (Deerfield Beach, Fla.). 21(48)
Hexagonal-phase single-crystal Gd2 O3 is deposited on GaN in a molecular beam epitaxy system. The dielectric constant is about twice that of its cubic counterpart when deposited on InGaAs or Si. The capacitive effective thickness of 0.5 nm in hexagon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2001a79f48f95822d8846c320fefc164
https://pubmed.ncbi.nlm.nih.gov/25378271
https://pubmed.ncbi.nlm.nih.gov/25378271
Autor:
Ming-Fong Tai, Ching Cheng, Jauyn Grace Lin, Li-Ling Tsai, Mon-Shu Ho, Fu-Jen Kao, Maw-Kuen Wu, J. Raynien Kwo, Beverly Karplus Hartline, Renee K. Horton, Catherine M. Kaicher
Publikováno v:
AIP Conference Proceedings.
The Working Group on Women in Physics in China‐Taiwan (WGWP‐CT) was established in 1999 and has been active since then. In this brief report, we will introduce the progress of WGWP‐CT and the current status of women physicists in China‐Taipei
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76b73a111157abb71d911efb138a2a50
https://doi.org/10.1063/1.3137927
https://doi.org/10.1063/1.3137927
Autor:
Tun-Wen Pi, Gunther K. Wertheim, Y. T. Fanchiang, Tsung-Hung Chiang, J. Raynien Kwo, Minghwei Hong
Publikováno v:
Applied Physics Express. 8:126602
During the initial stage of atomic layer deposition, the exposure of a GaAs(111)A-2×2 surface to trimethylaluminum (TMA) leads to occupying a Ga-vacancy site on the surface by a chemisorbed As-bonded aluminum with the loss of all methyl ligands. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d1902e5ebca4e1f0541a1279ebc9f62
https://doi.org/10.7567/apex.8.126602
https://doi.org/10.7567/apex.8.126602