Zobrazeno 1 - 10
of 82
pro vyhledávání: '"J Ramdani"'
Publikováno v:
Journal of Physics: Conference Series. 1402:022027
Construction of buildings has a complex type of work. Detailed work does not only refer to the technical specifications and drawing plans that have been set, but there are also construction norms and work steps that need to be understood by the Super
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c6252479e06f799d5de5320aa94d53c
https://doi.org/10.1088/1742-6596/1402/2/022027
https://doi.org/10.1088/1742-6596/1402/2/022027
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 19:934-939
We have measured the band offsets and materials properties of epitaxial SrTiO3/Si(001) heterojunctions for both n and p substrates, with and without an interfacial SiO2 layer. The through-air transfer from the growth chamber to the photoemission syst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83bec8f341d51c1363a42334d494417f
https://doi.org/10.1116/1.1365132
https://doi.org/10.1116/1.1365132
Publikováno v:
Journal of Electronic Materials. 22:1481-1485
Low-temperature (LT) growth of In0.47Ga0.53P was carried out in the temperature range from 200 to 260°C by gas source molecular beam epitaxy using solid Ga and In and precracked PH3. The Hall measurements of the as-grown film showed a resistivity of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe25a7bc2e5f33a9598ec3f61fea2349
https://doi.org/10.1007/bf02650003
https://doi.org/10.1007/bf02650003
Publikováno v:
Journal of Applied Physics. 74:2090-2093
A p+‐AlGaAs/n+‐GaInP heterojunction tunnel diode with band gap Eg≊1.9 eV was fabricated by the atomic layer epitaxy growth. Doping levels of 1×1020 cm−3 and 5×1019 cm−3 were achieved in the p and n side of the diode using carbon and selen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93afccc19b176e9bf083758c10b2dc8a
https://doi.org/10.1063/1.354753
https://doi.org/10.1063/1.354753
Autor:
Jean-Pierre Vilcot, J. Farari, Salah M. Bedair, Didier Decoster, H. Liu, John C. Roberts, J. Ramdani
Publikováno v:
Journal of Crystal Growth. 107:878-882
Laser assisted chemical vapor deposition (LCVD) is a new approach for the integration of optoelectronic devices. Device quality GaAs has been selectively grown in a temperature range of 300–400°C. LCVD films were doped both n- and p-type using H 2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1599aaf6713cc2c3fa69e7490a37860
https://doi.org/10.1016/0022-0248(91)90574-o
https://doi.org/10.1016/0022-0248(91)90574-o
Autor:
Craig A. Gaw, J. Ramdani, Paul R. Claisse, Michael S. Lebby, Philip Kiely, Wenbin Jiang, B. Lawrence
Publikováno v:
Technical Digest CLEO/Pacific Rim '97 Pacific Rim Conference on Lasers and Electro-Optics.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed5ac19c6fd1df78ab62ef7f9d873a6a
https://doi.org/10.1109/cleopr.1997.610586
https://doi.org/10.1109/cleopr.1997.610586
Determination of excess phosphorus in low‐temperature GaP grown by gas source molecular beam epitaxy
Autor:
Nadia A. El-Masry, Eicke R. Weber, Y. He, Salah M. Bedair, Robert J. Nemanich, T. L. McCormick, J. Ramdani
Publikováno v:
Applied Physics Letters. 65:1671-1673
GaP films, epitaxially grown at a low temperature (LT) of ∼200 °C by gas source molecular beam epitaxy, were reported recently to have excess phosphorus. In this letter, we report on the quantitative determination of the excess phosphorus in the L
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9960b7375b09d9ee3ceb71c84c24f87
https://doi.org/10.1063/1.112881
https://doi.org/10.1063/1.112881
Autor:
K. Eisenbeiser, Jay Curless, B.-Y. Nguyen, J. Ramdani, J. Conner, Z. Yu, Ravindranath Droopad, Vidya Kaushik, Corey Overgaard, L. Prabhu, J. Finder
Publikováno v:
58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526).
There is an extensive effort in the transistor industry to develop an alternative high-k gate dielectric to replace SiO/sub 2/ due to tunneling limits. We have investigated the potential of crystalline perovskite oxides (SrTiO/sub 3/ or STO) grown ep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54c77f563191faf484371d0e2a9ae317
https://doi.org/10.1109/drc.2000.877070
https://doi.org/10.1109/drc.2000.877070
Publikováno v:
Applied Physics Letters. 63:1231-1233
InxGa1−xP lattice matched to GaAs (x≂0.51) has proven to be useful in many device applications. Here we show that undoped, semi‐insulating InGaP is possible by growing with gas source molecular beam epitaxy at very low temperatures, 150–250
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce4951fd1ed3241315eec7fc6cf6e6af
https://doi.org/10.1063/1.109781
https://doi.org/10.1063/1.109781
Publikováno v:
Applied Physics Letters. 61:1646-1648
GaP films were epitaxially grown on GaP substrates at a low temperature ∼200 °C using gas source molecular beam epitaxy (MBE). The lattice constant of these LT GaP films was found to be larger than that of both the GaP substrate and films grown at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ccff3a4aad59ba8733809a0d02b018d
https://doi.org/10.1063/1.108439
https://doi.org/10.1063/1.108439