Zobrazeno 1 - 4
of 4
pro vyhledávání: '"J R Angulo"'
Autor:
C A Espinosa-González, J R Angulo, L A Conde, A M Carhuavilca, E F Alfaro, R Espinoza, J A Töfflinger, E Muñoz-Cerón, J de la Casa
Publikováno v:
Journal of Physics: Conference Series. 2180:012016
At present, there are free access online platforms that offer, free of charge, meteorological data on Peru; however, there is no study that validates the goodness of its use in the country. These types of tools are of the utmost interest, both in the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a83d65205e2fbcae15fcb14fb63024f
https://doi.org/10.1088/1742-6596/2180/1/012016
https://doi.org/10.1088/1742-6596/2180/1/012016
PV generator nominal power estimation using a ground sensor and the PVLIB online irradiance database
Publikováno v:
Journal of Physics: Conference Series. 2180:012005
The nominal power of a photovoltaic generator is a crucial parameter. For instance, it is a required input parameter for modelling the energy produced by a PV system. Determining the nominal power in-situ requires measuring the irradiance and module
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94129f5690f6202bfc366437df0f55bd
https://doi.org/10.1088/1742-6596/2180/1/012005
https://doi.org/10.1088/1742-6596/2180/1/012005
Autor:
A. Winnaker, Roland Weingärtner, L Montañez, J. A. Guerra, J A Töfflinger, K. Tucto, J R Angulo
Publikováno v:
MRS Advances. 1:2929-2934
A simple model to describe the fundamental absorption of amorphous hydrogenated silicon carbide thin films based on band fluctuations is presented. It provides a general equation describing both the Urbach and Tauc regions in the absorption spectrum.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a86c26172731666891be3489df999cbb
https://doi.org/10.1557/adv.2016.422
https://doi.org/10.1557/adv.2016.422
Autor:
J. A. Guerra, J A Töfflinger, Albrecht Winnacker, Alvaro Tejada, S. Gómez, Roland Weingärtner, J R Angulo, L Montañez, J Llamoza
Publikováno v:
Journal of Physics D: Applied Physics. 49:195102
We report on the optical bandgap engineering of sputtered hydrogenated amorphous silicon carbide (a-SiC:H) thin films under different hydrogen dilution conditions during the deposition process and after post-deposition annealing treatments. The Tauc-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a8933fd9a28d7ba273249f79c0e2275
https://doi.org/10.1088/0022-3727/49/19/195102
https://doi.org/10.1088/0022-3727/49/19/195102