Zobrazeno 1 - 10
of 58
pro vyhledávání: '"J Priesol"'
Publikováno v:
2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2b7e5bb76650a15ef4dd923e9b43627
https://doi.org/10.1109/asdam55965.2022.9966747
https://doi.org/10.1109/asdam55965.2022.9966747
Autor:
Jan Kuzmik, Alexander Satka, Stanislav Hasenöhrl, J. Priesol, S. Hascik, Ales Chvala, Roman Stoklas, Peter Sichman
Publikováno v:
IEEE Transactions on Electron Devices. 68:2365-2371
Vertical current conduction in a 1.3- $\mu \text{m}$ -thick semi-insulating (SI) C-doped GaN grown on a GaN substrate is analyzed. During the growth, pressure was varied from 100 to 20 mbar in order to increase C concentration from $\sim 1\times 10^{
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b2582fafa6c421808d8bc0df94c2713
https://doi.org/10.1109/ted.2021.3065893
https://doi.org/10.1109/ted.2021.3065893
Publikováno v:
IEEE Transactions on Electron Devices. 68:216-221
The mapping of the current induced by a focused electron beam in a scanning electron microscope (SEM) has been used to localize electrically stressed regions in the AlGaN/GaN-on-Si Schottky barrier diode (SBD) structures cross-sectioned by the focuse
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f34a16905a379946c602c287748d217a
https://doi.org/10.1109/ted.2020.3039756
https://doi.org/10.1109/ted.2020.3039756
Autor:
Richard F. Lewis, Adrian J. Priesol, Farzad Ehtemam, Susan King, Shmuel E. Davidi, Daniel M. Merfeld
Publikováno v:
Scientific Reports, Vol 9, Iss 1, Pp 1-12 (2019)
Scientific Reports
Scientific Reports
Vestibular migraine (VM) is the most common cause of spontaneous vertigo but remains poorly understood. We investigated the hypothesis that central vestibular pathways are sensitized in VM by measuring self-motion perceptual thresholds in patients an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::50bf2417d455cd7b4cd79dcaaceff11e
http://link.springer.com/article/10.1038/s41598-019-50803-y
http://link.springer.com/article/10.1038/s41598-019-50803-y
Characterization of Monolithic InAlN/GaN NAND Logic Cell Supported by Circuit and Device Simulations
Autor:
M. Blaho, Daniel Donoval, Ales Chvala, Lukas Nagy, Dagmar Gregušová, Juraj Marek, Jan Kuzmik, Alexander Satka, J. Priesol
Publikováno v:
IEEE Transactions on Electron Devices. 65:2666-2669
In this brief, the monolithic integration of enhancement (E)-mode and depletion (D)-mode InAlN/GaN high-electron mobility transistors (HEMTs) is presented. The aim of this brief is to show the results of the designed NAND logic cell, which consists o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b87972bca2f1cd9eb98e39501c870b3
https://doi.org/10.1109/ted.2018.2828464
https://doi.org/10.1109/ted.2018.2828464
Publikováno v:
DTIS
This paper presents large signal circuit models of InAlN/GaN monolithic integrated NAND and NOR logic gates. The models are calibrated automatically by artificial neural network (NN). Appropriate setting and properties for NN training is described. V
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf2f2fd6abc991956133eb20238030ca
https://doi.org/10.1109/dtis.2019.8735087
https://doi.org/10.1109/dtis.2019.8735087
Autor:
Stanislav Hasenöhrl, Jan Kuzmik, Juraj Marek, Alexander Satka, Š. Haščík, Roman Stoklas, Peter Sichman, A. Vincze, J. Priesol, Edmund Dobročka, Ales Chvala, F. Gucmann
Publikováno v:
Materials Science in Semiconductor Processing. 118:105203
Samples comprising 1.3 μm-thick C-doped semi-insulating (SI) GaN layer sandwiched between two n-GaN layers were grown on sapphire or conductive GaN substrates by metal-organic chemical vapor phase epitaxy at varied reactor pressure between 100 and 2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5364d4ef962a105e339a6a544e9f89d
https://doi.org/10.1016/j.mssp.2020.105203
https://doi.org/10.1016/j.mssp.2020.105203
Autor:
Claudio Fiegna, Enrico Sangiorgi, Steve Stoffels, Matteo Borga, Enrico Zanoni, Gaudenzio Meneghesso, Alexander Satka, Matteo Meneghini, Andrea Natale Tallarico, Niels Posthuma, J. Zheng, Stefaan Decoutere, Benoit Bakeroot, J. Priesol, Elena Fabris, Xiaohua Ma
Publikováno v:
IRPS
In this paper, we present an in-depth study of the gate leakage mechanisms and correlated breakdown of GaN-based power HEMTs with p-GaN gate, controlled by a Schottky metal/p-GaN junction. A detailed investigation of the process split and geometry de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a4189d939bd22e83bc60809518e07890
http://hdl.handle.net/11585/705164
http://hdl.handle.net/11585/705164
Autor:
Alexander Satka, M. Blah, Daniel Donoval, M. Vilhan, Lukas Nagy, J. Priesol, Dagmar Gregušová, Ales Chvala, Jan Kuzmik, Juraj Marek
Publikováno v:
2018 12th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM).
This paper presents simulation analysis of monolithic integrated InAlN/GaN NAND logic cell comprised of depletion-mode and dual-gate enhancement-mode high electron mobility transistors. Calibrated static and dynamic electrophysical models are propose
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c25e2709603a09da07e33edefd657f15
https://doi.org/10.1109/asdam.2018.8544508
https://doi.org/10.1109/asdam.2018.8544508
Autor:
Jan Kuzmik, M. Blaho, J. Priesol, Alexander Satka, Ales Chvala, Daniel Donoval, Lukas Nagy, Dagmar Gregušová, Juraj Marek
Publikováno v:
DTIS
In this paper, we present the monolithic integration of enhancement-mode and depletion-mode InAlN/GaN heterostructure high electron mobility transistors (HEMTs). The aim of the work is to show the results of the designed NAND logic cell which consist
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43f1410f73af44a35e0f609398a744b0
https://doi.org/10.1109/dtis.2018.8368565
https://doi.org/10.1109/dtis.2018.8368565