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pro vyhledávání: '"J P Reifenberg"'
Autor:
Sangbum Kim, H P Wong, Jiale Liang, J P Reifenberg, Mehdi Asheghi, Kenneth E. Goodson, S Raoux, Bipin Rajendran
Publikováno v:
Emerging Nanoelectronic Devices
In this paper, recent progress of phase change memory (PCM) is reviewed. The electrical and thermal properties of phase change materials are surveyed with a focus on the scalability of the materials and their impact on device design. Innovations in t