Zobrazeno 1 - 10
of 24
pro vyhledávání: '"J P R David"'
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-8 (2022)
Abstract A series of gallium arsenide bismide device layers covering a range of growth conditions are thoroughly probed by low-temperature, power-dependent photoluminescence measurements. The photoluminescence data is modelled using a localised state
Externí odkaz:
https://doaj.org/article/917286504a3e4248a838c9b0747cef65
Autor:
Mansur Mohammed Ali Gamel, Pin Jern Ker, Hui Jing Lee, Wan Emilin Suliza Wan Abdul Rashid, M. A. Hannan, J. P. R. David, M. Z. Jamaludin
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-14 (2021)
Abstract The optimization of thermophotovoltaic (TPV) cell efficiency is essential since it leads to a significant increase in the output power. Typically, the optimization of In0.53Ga0.47As TPV cell has been limited to single variable such as the em
Externí odkaz:
https://doaj.org/article/df8ebe9b4fcb4eb89a71ba637b39c0c2
Publikováno v:
Journal of Materials Science: Materials in Electronics. 34
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61efeeb48d3a2e3b03d650bba71838ee
https://doi.org/10.1007/s10854-023-09839-0
https://doi.org/10.1007/s10854-023-09839-0
Publikováno v:
IEEE Photonics Journal, Vol 6, Iss 1, Pp 1-8 (2014)
The analytical calculation of the bit error rate (BER) of digital optical receivers that employ avalanche photodiodes (APDs) is challenging due to 1) the stochastic nature of the avalanche photodiode's impulse-response function and 2) the presence of
Externí odkaz:
https://doaj.org/article/30072d7724314dfea56f5a01e4d2bdf5
Publikováno v:
Journal of Nanomaterials.
Indium arsenide quantum dots are of great interest for next-generation telecom optoelectronics if their emission wavelength can be red shifted into the correct range. One method to achieve this is the deposition of a surfactant, such as bismuth, duri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::43fc1dd6b26a568c496b1f86ebde2516
Autor:
S. Lee, X. Jin, H. Jung, H. Lewis, Y. Liu, B. Guo, S. H. Kodati, M. Schwartz, C. Grein, T. J. Ronningen, J. P. R. David, Joe. C. Campbell, S. Krishna
Publikováno v:
Optica. 10:147
High sensitivity avalanche photodiodes (APDs) operating at eye-safe infrared wavelengths (1400–1650 nm) are essential components in many communications and sensing systems. We report the demonstration of a room temperature, ultrahigh gain ( M = 278
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b649e2f7472fe8175bfd5fcda9953899
https://doi.org/10.1364/optica.476963
https://doi.org/10.1364/optica.476963
Publikováno v:
Microscopy of Semiconducting Materials 2003 ISBN: 9781351074636
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21d2986fcf7d21e11d0b3f85ab3d9a13
https://doi.org/10.1201/9781351074636-24
https://doi.org/10.1201/9781351074636-24
Publikováno v:
Measurement Science & Technology; Jul2006, Vol. 17 Issue 7, p1941-1946, 6p
Light-biased IV characteristics of a GaAsBi/GaAs multiple quantum well pin diode at low temperature.
Autor:
R D Richards, T B O Rockett, M R M Nawawi, F Harun, A Mellor, T Wilson, C Christou, S Chen, J P R David
Publikováno v:
Semiconductor Science & Technology; Sep2018, Vol. 33 Issue 9, p1-1, 1p
Autor:
Y. L. Goh, D. J. Massey, A. R. J. Marshall, J. S. Ng, C. H. Tan, M. Hopkinson, J. P. R. David
Publikováno v:
LEOS 2006 - 19th Annual Meeting of the IEEE Lasers & Electro-Optics Society; 2006, p787-788, 2p