Zobrazeno 1 - 10
of 30
pro vyhledávání: '"J P Gowers"'
Autor:
Michael J. Trainor, Stanley D. Brotherton, John R. A. Ayres, C. Glaister, J. P. Gowers, David J. Mcculloch, Carole Anne Fisher, M.J. Edwards
Publikováno v:
Thin Solid Films. 337:188-195
The technology for the fabrication of poly-Si TFTs on glass substrates has now reached a level of maturity such that the first commercial products are becoming available. The technology choice will be briefly reviewed and the reasons for the preferre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28d2062324a751762422900ac1c9514f
https://doi.org/10.1016/s0040-6090(98)01176-6
https://doi.org/10.1016/s0040-6090(98)01176-6
Autor:
David J. Mcculloch, J. P. Gowers, Stanley D. Brotherton, Michael J. Trainor, John R. A. Ayres
Publikováno v:
Journal of Applied Physics. 82:4086-4094
The influence of film thickness and incident excimer laser energy density on the properties of poly-Si thin film transistors has been investigated and a coherent pattern of behavior has been identified which establishes controlled melt-through of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af295ddcbb4a899fb778ed65bb0133fa
https://doi.org/10.1063/1.365719
https://doi.org/10.1063/1.365719
Publikováno v:
IEEE Transactions on Electron Devices. 40:407-413
The crystallization of alpha -Si:H into poly-Si using an excimer laser has been examined. The resulting microstructure was found to be stratified into a large-grain surface region, formed from the liquid phase, and a fine-grain underlying layer, thou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74bba36b69ba58262114d7b997b63b6a
https://doi.org/10.1109/16.182521
https://doi.org/10.1109/16.182521
Publikováno v:
Microelectronic Engineering. 19:101-104
Layers of ?Si:H have been crystallised into poly-Si using a pulsed KrF excimer laser. Examination of the these layers by cross-sectional TEM has revealed a vertically stratified microstructure, with a large grain surface region crystallising from the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca569eff6787f6dbaa5c7e48d68a85ca
https://doi.org/10.1016/0167-9317(92)90401-c
https://doi.org/10.1016/0167-9317(92)90401-c
Autor:
Paul F. Fewster, M Brugmans, Phil Dawson, J. J. Harris, Karl Woodbridge, C. M. Hellon, J. Hewett, Clive J. Roberts, S. Auzoux, J. P. Gowers
Publikováno v:
Semiconductor Science and Technology. 5:669-674
X-ray diffraction, transmission electron microscopy, Hall effect, Shubnikov-de Haas effect and photoluminescence measurements have been performed on a set of pseudomorphic Al0.25Ga0.75As/In0.15Ga0.85As/GaAs structures with quantum-well widths from 75
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d591f335666c5b6571ec6c49324c122
https://doi.org/10.1088/0268-1242/5/7/006
https://doi.org/10.1088/0268-1242/5/7/006
Autor:
S.D. Brotherton, Carole Anne Fisher, John R. A. Ayres, Frank W. Rohlfing, J. P. Gowers, David J. Mcculloch
Publikováno v:
MRS Proceedings. 621
There is interest in reducing the shot number in the poly-Si laser crystallisation process in order to improve its throughput. Two distinct shot number dependent effects have been identified, which are both laser intensity dependent. The critical las
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::482a633df75bcd86183d9ed77aa04fb3
https://doi.org/10.1557/proc-621-q7.1.1
https://doi.org/10.1557/proc-621-q7.1.1
Publikováno v:
Japanese Journal of Applied Physics. 43:5114
Excimer laser crystallization is the currently preferred technique for the fabrication of high performance poly-Si thin film transistors for use in active matrix displays with integrated drive circuits. One of the issues with this process is the trad
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83a08edf56d6f9f617f6058cbcf0e250
https://doi.org/10.1143/jjap.43.5114
https://doi.org/10.1143/jjap.43.5114
Publikováno v:
Journal of Electronic Materials. 18:173-184
An examination of shallow pre-amorphisedp + n junctions in silicon has revealed three distinct defect related phenomena determined largely by the annealing temperature and relative location of the junction and the amorphous-crystalline (α-c) boundar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08539e06fba2c4d4f5e10a3433e614c9
https://doi.org/10.1007/bf02657405
https://doi.org/10.1007/bf02657405
Publikováno v:
Applied Physics A Solids and Surfaces. 44:195-200
Beryllium diffusion during MBE growth of (Al, Ga)As layers, (Al, Ga)As/GaAs heterojunctions and GaAs/AlAs superlattices has been studied by electrochemical C-V and secondary ion mass spectrometry (SIMS) concentration profiling, in conjunction with tr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3fa608332f16753e4a9c3d6d6895147
https://doi.org/10.1007/bf00626423
https://doi.org/10.1007/bf00626423
Autor:
J. P. Gowers
Publikováno v:
Applied Physics A Solids and Surfaces. 34:231-236
Antiphase domains occur in thin GaAs epitaxial films grown on Ge(001) by molecular beam epitaxy. The domains have been imaged by transmission electron microscopy using 200-type reflections in dark field. The carefully chosen imaging conditions with c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6fe4be2b17d2d846155fa55462b446fb
https://doi.org/10.1007/bf00616577
https://doi.org/10.1007/bf00616577