Zobrazeno 1 - 10
of 70
pro vyhledávání: '"J P Boulanger"'
Autor:
N. Tajik, A. C. E. Chia, N. Jewell, R. Yee, P Kuyanov, J P Boulanger, J. Zhang, K. M. A. Rahman, Ray R. LaPierre, Chris M. Haapamaki, S. J. Gibson
Publikováno v:
physica status solidi (RRL) - Rapid Research Letters. 7:815-830
This article reviews recent developments in nanowire-based photovoltaics (PV) with an emphasis on III–V semiconductors including growth mechanisms, device fabrication and performance results. We first review the available nanowire growth methods fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb96f34f421cd339fa943518a3b14f16
https://doi.org/10.1002/pssr.201307109
https://doi.org/10.1002/pssr.201307109
Autor:
Xiaowu Shirley Tang, Navneet Dhindsa, Simarjeet S. Saini, J P Boulanger, Ray R. LaPierre, Jaspreet Walia
Publikováno v:
Nanotechnology. 27(24)
Gallium arsenide nanowires have shown considerable promise for use in applications in which the absorption of light is required. When the nanowires are oriented vertically, a considerable amount of light can be absorbed, leading to significant heatin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eb41b550076a23b2159d327dce436210
https://pubmed.ncbi.nlm.nih.gov/27172276
https://pubmed.ncbi.nlm.nih.gov/27172276
Autor:
Ray R. LaPierre, J P Boulanger
Publikováno v:
Journal of Crystal Growth. 332:21-26
Transmission electron microscopy (TEM) studies are presented for Au-assisted vapor–liquid–solid (VLS) nanowire growth of gallium arsenide/gallium phosphide (GaAs/GaP) axial heterostructures. The supersaturation of the liquid Au-III–V alloy drop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0b96d01461f7650a33f0c2a608999c4
https://doi.org/10.1016/j.jcrysgro.2011.07.021
https://doi.org/10.1016/j.jcrysgro.2011.07.021
Autor:
A. C. E. Chia, S. J. Gibson, N. Tajik, N. Jewell, K. M. A. Rahman, J. Zhang, J P Boulanger, Chris M. Haapamaki, P Kuyanov, R. Yee, Ray R. LaPierre
Publikováno v:
physica status solidi (RRL) - Rapid Research Letters. 7
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6ae396b38dc26819deaf5ad5a25b879
https://doi.org/10.1002/pssr.201370457
https://doi.org/10.1002/pssr.201370457
Publikováno v:
Nanotechnology. 27:475403
We describe methods of Ga droplet consumption in Ga-assisted GaAs nanowires, and their impact on the crystal structure at the tip of nanowires. Droplets are consumed under different group V flux conditions and the resulting tip crystal structure is e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d19d6f0ff46a397b7413d0876e62bc7c
https://doi.org/10.1088/0957-4484/27/47/475403
https://doi.org/10.1088/0957-4484/27/47/475403
Publikováno v:
Journal of Applied Physics. 118:114306
A method is presented to improve the quantitative determination of dopant concentration in semiconductor nanowire (NW) arrays using secondary ion mass spectrometry (SIMS). SIMS measurements were used to determine Be dopant concentrations in a Be-dope
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe36e1bea52a82835044875fedb0bca4
https://doi.org/10.1063/1.4931148
https://doi.org/10.1063/1.4931148
Autor:
Ray R. LaPierre, A. C. E. Chia, J P Boulanger, Junpeng Zhang, Iman Khodadad, Simarjeet S. Saini, Navneet Dhindsa
Publikováno v:
Applied Physics Letters. 105:123113
A method is presented of fabricating gallium arsenide (GaAs) nanowire arrays of controlled diameter and period by reactive ion etching of a GaAs substrate containing an indium gallium arsenide (InGaP) etch stop layer, allowing the precise nanowire le
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43fe3afb02c9898a7f321b3086d12bde
https://doi.org/10.1063/1.4896772
https://doi.org/10.1063/1.4896772
Publikováno v:
Applied Physics Letters. 105:083122
A method is presented for maximizing the yield and crystal phase purity of vertically aligned Au-assisted GaAs nanowires grown with an SiOx selective area epitaxy mask on GaAs (111)B substrates. The nanowires were grown by the vapor-liquid-solid (VLS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb6f7b13a91d85ce7cf633c4ccd41486
https://doi.org/10.1063/1.4894288
https://doi.org/10.1063/1.4894288
Autor:
A. C. E. Chia, Simarjeet S. Saini, Navneet Dhindsa, J P Boulanger, Ray R. LaPierre, Iman Khodadad
Publikováno v:
Nanotechnology. 25:305303
We report fabrication methods, including metal masks and dry etching, and demonstrate highly ordered vertical gallium arsenide nanowire arrays. The etching process created high aspect ratio, vertical nanowires with insignificant undercutting from the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8827ca8d3c1bb615e0215547e02758c2
https://doi.org/10.1088/0957-4484/25/30/305303
https://doi.org/10.1088/0957-4484/25/30/305303
Publikováno v:
Semiconductor Science and Technology. 28:105025
Periodic arrays of self-catalyzed GaAs nanowires (NWs) were grown on Si substrates by gas source molecular beam epitaxy (GS-MBE) using patterned oxide templates. The various challenges of the patterning process that result in undesired outcomes are d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51c0fe2fd653c2cfff44667bc332d640
https://doi.org/10.1088/0268-1242/28/10/105025
https://doi.org/10.1088/0268-1242/28/10/105025