Zobrazeno 1 - 10
of 29
pro vyhledávání: '"J O Oelerich"'
Publikováno v:
Ultramicroscopy. 181:8-16
Surface relaxation of thin transmission electron microscopy (TEM) specimens of strained layers results in a severe bending of lattice planes. This bending significantly displaces atoms from their ideal channeling positions which has a strong impact o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bac6f57923df8d40a3b1fd020ddb4d9f
https://doi.org/10.1016/j.ultramic.2017.04.019
https://doi.org/10.1016/j.ultramic.2017.04.019
Publikováno v:
Journal of Microscopy. 268:239-247
Summary The surfaces of thin transmission electron microscopy (TEM) specimens of strained heterostructures can relax. The resulting bending of the lattice planes significantly influences high-angle annular dark field (HAADF) measurements. We investig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a49aa05a64cb31ac337e681bbbdbf6a4
https://doi.org/10.1111/jmi.12622
https://doi.org/10.1111/jmi.12622
Autor:
S. H. M. Greiner, A. V. Nenashev, S. D. Baranovskii, Florian Gebhard, J. O. Oelerich, A. V. Dvurechenskii
Publikováno v:
Physical Review B. 100
The charge transport mechanism in amorphous oxide semiconductors (AOS) is a matter of controversial debates. Most theoretical studies so far neglected the percolation nature of the phenomenon. In this article, a recipe for theoretical description of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6063e623d58c86dde84748f82c8fe6ce
https://doi.org/10.1103/physrevb.100.125202
https://doi.org/10.1103/physrevb.100.125202
Publikováno v:
AIP Advances, Vol 9, Iss 5, Pp 055328-055328-6 (2019)
A modified core-to-valence band maximum approach is applied to calculate band offsets of strained III/V semiconductor hetero junctions. The method is used for the analysis of (In,Ga)As/GaAs/Ga(As,Sb) multi-quantum well structures. The obtained offset
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7c411f252d659303c6bba9a592b31cec
http://arxiv.org/abs/1901.00667
http://arxiv.org/abs/1901.00667
Autor:
Giovanni Isella, Lennart Duschek, Andrea Ballabio, J. O. Oelerich, Andreas Beyer, C. Fuchs, Kerstin Volz, P. Kükelhan, Wolfgang Stolz, Saleh Firoozabadi
Publikováno v:
Ultramicroscopy
This paper presents a comprehensive investigation of an extended method to determine composition of materials by scanning transmission electron microscopy (STEM) high angle annular darkfield (HAADF) images and using complementary multislice simulatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::80d2161b899bd536a53d641d6f6d90ed
http://hdl.handle.net/11311/1089260
http://hdl.handle.net/11311/1089260
Autor:
J. O. Oelerich, Andreas Beyer, C. Fuchs, P. Kükelhan, Lennart Duschek, Wolfgang Stolz, Kerstin Volz, Saleh Firoozabadi
Publikováno v:
Journal of Crystal Growth
Surface segregation and interaction effects of In and Sb in (GaIn)As/Ga(AsSb)/(GaIn)As- ���W���-type quantum well heterostructures (���W���-QWHs) are investigated by high angle annular dark field scanning transmission electron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a4d893f8d68542ec37ff019bd6fa36c8
Autor:
Katharina Werner, Ralf Tonner, J. O. Oelerich, Wolfgang Stolz, Kerstin Volz, Andreas Beyer, Gerson Mette, S. D. Baranovskii, K. Jandieri, Andreas Stegmüller
Publikováno v:
Chemistry of Materials. 28:3265-3275
An enhancement of computer performance following Moore’s law requires the miniaturization of semiconductor devices. Presently, their dimensions reach the nanoscale. Interfaces between materials become increasingly important as the volume is reduced
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc5da123a2e87d11ac1f2382f43530a5
https://doi.org/10.1021/acs.chemmater.5b04896
https://doi.org/10.1021/acs.chemmater.5b04896
Publikováno v:
AIP Advances, Vol 10, Iss 4, Pp 045207-045207-4 (2020)
An ab initio based scheme for the determination of the valence band offset between different III–V semiconductor systems is presented on the example of GaAs and Ga(AsSb) pseudomorphically strained to GaAs for Sb concentrations up to 37.5%. Modified
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8fafef830de89d6dfd533e21643d4837
https://doi.org/10.1063/5.0001300
https://doi.org/10.1063/5.0001300
Autor:
A. V. Dvurechenskii, Alla Reznik, S. D. Baranovskii, O. Semeniuk, Florian Gebhard, V. V. Valkovskii, A. V. Nenashev, J. O. Oelerich
Publikováno v:
Physical Review B. 98
Trapping of electrons in localized states strongly affects optoelectronic phenomena in disordered semiconductors. In this paper, it is shown by numerical simulations and by analytical calculations that the release of the trapped electrons into the co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1412b7eea1de09c10258df346efa2d7f
https://doi.org/10.1103/physrevb.98.155207
https://doi.org/10.1103/physrevb.98.155207
Autor:
J. O. Oelerich, K. Jandieri, A. V. Dvurechenskii, Florian Gebhard, Alla Reznik, S. D. Baranovskii, A. V. Nenashev, O. Semeniuk, V. V. Valkovskii, Giedrius Juška
Publikováno v:
Physical Review B. 98
Charge transport in disordered inorganic semiconductors is governed by the multiple trapping (MT) of carriers from delocalized states in the conduction band into localized traps in the band tail. Although it is well known that carrier mobility in the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1620c8f55db95192038f7f9bacf910f
https://doi.org/10.1103/physrevb.98.035201
https://doi.org/10.1103/physrevb.98.035201