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Akademický článek
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Akademický článek
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Autor:
D.W. van der Weide, Charles Tahan, Levente Klein, Susan Coppersmith, Srijit Goswami, Robert Joynt, Patricia M. Mooney, J. O. Chu, Mark Friesen, J. L. Truitt, K. A. Slinker, Mark A. Eriksson, L. M. McGuire
Publikováno v:
Nature Physics. 3:41-45
Silicon has many attractive properties for quantum computing, and the quantum dot architecture is appealing because of its controllability and scalability. However, the multiple valleys in the silicon conduction band are potentially a serious source
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2028cc8b70d0ae23727e1534e09b3211
https://doi.org/10.1038/nphys475
https://doi.org/10.1038/nphys475
Autor:
Alexei M. Tyryshkin, J. L. Truitt, Friedrich Schäffler, Mark A. Eriksson, J. O. Chu, Stephen Aplin Lyon, Wolfgang Jantsch, Thomas Schenkel, Jeffrey Bokor, Susan Coppersmith
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 35:257-263
We discuss pulsed electron spin resonance measurements of electrons in Si and determine the spin coherence from the decay of the spin echo signals. Tightly bound donor electrons in isotopically enriched 28 Si are found to have exceptionally long spin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e1d36daa1ada53be8366be8310248ad
https://doi.org/10.1016/j.physe.2006.08.021
https://doi.org/10.1016/j.physe.2006.08.021
Autor:
Huiling Shang, Martin M. Frank, J. O. Chu, Evgeni Gusev, Kathryn W. Guarini, Meikei Ieong, Stephen W. Bedell
Publikováno v:
IBM Journal of Research and Development. 50:377-386
This paper reviews progress and current critical issues with respect to the integration of germanium (Ge) surface-channel MOSFET devices as well as strained-Ge buried-channel MOSFET structures. The device design and scalability of strained-Ge buried-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2dd3f1b47c81a60814b74606bc747443
https://doi.org/10.1147/rd.504.0377
https://doi.org/10.1147/rd.504.0377
Autor:
J. O. Chu, K.K. Chan, Juan Cai, Diane C. Boyd, Y.Y. Yang, Kern Rim, Jean Jordan-Sweet, Patricia M. Mooney, Silke Christiansen, H. Chen
Publikováno v:
Solid-State Electronics. 49:1669-1673
He-implantation and annealing is an alternative method of fabricating strain-relaxed SiGe buffer layers for applications such as strained Si MOSFETs. Here we report the characteristics of He-implanted and annealed SiGe buffer layers and the propertie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43dcef10e70e5eb8ff3c5bf408d66c46
https://doi.org/10.1016/j.sse.2005.07.024
https://doi.org/10.1016/j.sse.2005.07.024
Autor:
Mark A. Eriksson, Steven J. Koester, Levente Klein, Mark Friesen, Charles Tahan, K. A. Slinker, J. O. Chu, Patricia M. Mooney, Susan Coppersmith, Robert Joynt
Publikováno v:
Quantum Information Processing. 3:133-146
The spins of localized electrons in silicon are strong candidates for quantum information processing because of their extremely long coherence times and the integrability of Si within the present microelectronics infrastructure. This paper reviews a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3cb331082be7263427fe19c9f57cecc5
https://doi.org/10.1007/s11128-004-2224-z
https://doi.org/10.1007/s11128-004-2224-z
Publikováno v:
Journal of Applied Physics. 95:5347-5351
Strain relaxation and threading dislocation densities in Si1−xGex (0.15
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c580e976f6e16da6291e7d4dc70b13da
https://doi.org/10.1063/1.1699488
https://doi.org/10.1063/1.1699488
Autor:
J. O. Chu, D. B. Aubertine, Ann F. Marshall, M. A. Mander, Nevran Ozguven, Paul C. McIntyre, P. M. Mooney
Publikováno v:
Journal of Applied Physics. 92:5027-5035
X-ray diffraction is used to probe interdiffusion in asymmetrically strained, low concentration Si/SiGe superlattices. The results are shown to be in good agreement with a model developed from literature data for Ge diffusion in SiGe alloys. Using th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c30133792afbf6e94f6b064196e87693
https://doi.org/10.1063/1.1508424
https://doi.org/10.1063/1.1508424