Zobrazeno 1 - 10
of 385
pro vyhledávání: '"J M Martinez Duart"'
Publikováno v:
Microelectronic Engineering. :655-659
N-type and p-type Porous Silicon (PSi) have been observed by Scanning Electron Micrograph (SEM) and characterised by Photoluminescence (PL). The porous n-type silicon obtained under illumination (photoelectrochemical etching), consists of a layer of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fddb43023427f310bc8ed38ac1acb1a0
https://doi.org/10.1016/s0167-9317(98)00240-8
https://doi.org/10.1016/s0167-9317(98)00240-8
Publikováno v:
Materials Science Forum. :527-534
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b87b65be056ee9c303b5ce6638ff086
https://doi.org/10.4028/www.scientific.net/msf.185-188.527
https://doi.org/10.4028/www.scientific.net/msf.185-188.527
Autor:
J. M. Martinez-Duart, Cristina Gómez-Aleixandre, J. M. Albella, O. Sánchez-Garrido, Luis Vázquez
Publikováno v:
Surface and Coatings Technology. 70:163-174
The deposition problems of diamond and cubic boron nitride (c-BN) by chemical vapour deposition techniques are reviewed, with major emphasis on the nucleation and reaction mechanisms. A discussion is made of the main deposition parameters ( i.e. gas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5cbf23668e1af7a9a9eda83ba2315e61
https://doi.org/10.1016/0257-8972(94)02272-r
https://doi.org/10.1016/0257-8972(94)02272-r
Publikováno v:
Surface and Interface Analysis. 15:440-446
Tantalum silicide films of ∼200 nm thick and composition TaSi2 were obtained by co-sputtering in a Varian 3120 S-gun magnetron system. The films were then introduced in an AES spectrometer and bombarded with Ar+ ions of different energies in order
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ccb70c7acd64616bfd04c569a943b92
https://doi.org/10.1002/sia.740150708
https://doi.org/10.1002/sia.740150708
Autor:
J. M. Martinez-Duart, A. M. Baró, José M. Gómez-Rodríguez, V. P. Parkhutik, J. M. Albella, V. I. Shershulsky
Publikováno v:
Applied Physics Letters. 62:366-368
A morphology of pores formed in silicon by its anodic polarization in a hydrofluoric acid has been studied using scanning tunneling microscopy (STM). The results obtained show that the pore structure, as yielded from the STM measurements, may be orde
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48995b4ff8394fdb927355a27dfaf349
https://doi.org/10.1063/1.108958
https://doi.org/10.1063/1.108958
Publikováno v:
Optical Properties of Low Dimensional Silicon Structures ISBN: 9789401049276
Two theoretical models allowing to simulate morphological features of porous layers formed by electrochemical anodization of semiconductors are reviewed and their suitability for practical applications in forming the porous silicon layers is discusse
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::840dc74a0723ab04d7231e2568c1beed
https://doi.org/10.1007/978-94-011-2092-0_6
https://doi.org/10.1007/978-94-011-2092-0_6
Publikováno v:
ChemInform. 21
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f91fb14416c22a7e45f2ebf1894712b2
https://doi.org/10.1002/chin.199051024
https://doi.org/10.1002/chin.199051024
Autor:
Hernández, R. Magro, Muñoz-Noval, A., Briz, J. A., Murias, J. R., Espinosa-Rodríguez, A., Fraile, L. M., Agulló-Rueda, F., Ynsa, M. D., Tavares de Sousa, C., Cortés-Llanos, B., López, G. García, Nácher, E., García-Tavora, V., Mont i Geli, N., Nerio, A., Onecha, V. V., Pallàs, M., Tarifeño, A., Tengblad, O., Silván, M. Manso
Publikováno v:
Journal of Materials Chemistry B; 12/14/2024, Vol. 12 Issue 46, p12030-12037, 8p
Publikováno v:
Journal of Physics E: Scientific Instruments. 10:61-65
A general method is presented to study the response function (first harmonic) of velocity analysers to an arbitrary energy distribution N(E), as occurs in Auger electron spectrometry. The method is based upon finding the response to a delta function
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82e9b60b3259a68893d06eec16cd9a9b
https://doi.org/10.1088/0022-3735/10/1/015
https://doi.org/10.1088/0022-3735/10/1/015
Publikováno v:
Surface and Interface Analysis. 12:334-338
Palladium silicide films were obtained after annealing thermally evaporated Pd layers on p-type Si substrates. The silicide layers formed at different temperatures were characterized by Rutherford backscattering (RBS) and Auger electron spectroscopy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db46e52662475ac7f73012e5390a61f5
https://doi.org/10.1002/sia.740120603
https://doi.org/10.1002/sia.740120603