Zobrazeno 1 - 10
of 37
pro vyhledávání: '"J M, Whelan"'
Publikováno v:
Journal of Zoology. 311:260-268
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c71b10ce87be36298190bbf6d60fa433
https://doi.org/10.1111/jzo.12786
https://doi.org/10.1111/jzo.12786
Autor:
G W, Woods, J M, Whelan
Publikováno v:
Clinics in sports medicine. 9(3)
The discoid meniscus is probably a congenital deviation that usually occurs laterally. The Watanabe classification consists of complete, incomplete, or Wrisburg ligament types. Complete and incomplete discoid menisci normally require treatment only w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::2db6d28305e135cc615ca565f5c583ef
https://pubmed.ncbi.nlm.nih.gov/2199078
https://pubmed.ncbi.nlm.nih.gov/2199078
Publikováno v:
Journal of Applied Physics. 47:5022-5029
In this study we compare some of the characteristic properties of liquid‐phase epitaxial (LPE) layers of heavily Si‐doped GaAs with those of melt‐grown GaAs : Si. LPE layers are grown isothermally at 750, 840, and 910 °C. All the layers are p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c79341932b7a0adf56590aeb8cff0708
https://doi.org/10.1063/1.322460
https://doi.org/10.1063/1.322460
Publikováno v:
Journal of Crystal Growth. 91:632-638
Surface cleaning techniques used for semi-insulating GaAs substrates prior to epitaxial growth can have an important and sometimes detrimental effect on the quality and characteristics of epitaxial layers that are grown on them. We observe that a HF
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94013d50240f1922e51f03c58ac8cf3c
https://doi.org/10.1016/0022-0248(88)90132-7
https://doi.org/10.1016/0022-0248(88)90132-7
Publikováno v:
Journal of Electronic Materials. 11:663-688
This paper describes the Si-doping of GaAs that was grown using the AsCl3:H2:GaAs, Ga Chemical vapor deposition process. The doping sources were AsCl3:SiCl4 liquid solutions which proved to be highly reproducible for Si doping within the range, 1×1O
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2bbe55aded947804322ba6f9fc850a70
https://doi.org/10.1007/bf02672390
https://doi.org/10.1007/bf02672390
Publikováno v:
Journal of Electronic Materials. 14:769-781
We have studied the chemical and electrical properties of Si doped GaAs layers grown from SiH4. - TMG - ASH3 - H2 at atmospheric pressure in a large scale metal-organic chemical vapor deposition (MOCVD) reactor. Excellent mobilities at the high dopin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3225ccf420baa33f8882b458f01c2a72
https://doi.org/10.1007/bf02654310
https://doi.org/10.1007/bf02654310
Publikováno v:
Journal of Applied Physics. 55:347-352
The redistribution of Mn during post‐implantation annealing in bulk semi‐insulating GaAs and GaAs vapor phase epitaxial buffer layers is studied by secondary ion mass spectrometry for Si, Se, and Cd implanted materials annealed capless in an As4
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc50c95b6031fcacd7dbc076fb808277
https://doi.org/10.1063/1.333078
https://doi.org/10.1063/1.333078
Autor:
J. M. Whelan, R. M. Malbon
Publikováno v:
Journal of The Electrochemical Society. 123:761-765
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb352afb146c6c7ef1c1f1b448281496
https://doi.org/10.1149/1.2132923
https://doi.org/10.1149/1.2132923
Publikováno v:
Journal of Applied Physics. 57:4732-4737
The chemical and electrical characteristics were measured of 100‐keV Si+‐implanted GaAs at doses of (6 – 10)×1012 cm−2 after rapid thermal annealing (RTA) for times of 5–40 s at temperatures between 850 and 975 °C. Optimal conditions were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0deecfbe8dddf87addea09b06ac6b1ae
https://doi.org/10.1063/1.335336
https://doi.org/10.1063/1.335336
Autor:
H. Kanber, J. M. Whelan
Publikováno v:
Journal of The Electrochemical Society. 134:2596-2599
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f39a24d1ea186f97e65acc3289f27d64
https://doi.org/10.1149/1.2100249
https://doi.org/10.1149/1.2100249