Zobrazeno 1 - 10
of 46
pro vyhledávání: '"J M, Shannon"'
Autor:
B. A. Morgan, J. M. Shannon
Publikováno v:
Journal of Applied Physics. 86:1548-1551
Current transport through good quality undoped silicon-rich silicon nitride is normally limited by the contacts. However, if the concentration of silicon dangling bonds is increased by current stressing or raising the nitrogen content, current transp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4d55444fea5c5f8dc088b6aaa603b54
https://doi.org/10.1063/1.370966
https://doi.org/10.1063/1.370966
Autor:
David H. Ingbar, S. K. Savick, D. E. Schellhase, J. M. Shannon, S. Duvick, R. Detterding, J. D. Jamieson
Publikováno v:
Scopus-Elsevier
Late in gestation, the prenatal fetal alveolar epithelium switches from fluid secretion to resorption of salt and water via apical sodium channels and basal Na-K-ATPase. The amounts of lung sodium pump activity protein and mRNA increase in the lung j
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::aa4ffb2c3878f1e9a2f2a5860ef7873e
https://doi.org/10.1152/ajplung.1997.272.4.l665
https://doi.org/10.1152/ajplung.1997.272.4.l665
Autor:
J. M. Shannon
Publikováno v:
Applied Physics Letters. 85:326-328
Thin-film field-effect transistors in hydrogenated amorphous silicon are notoriously unstable due to the formation of silicon dangling bond trapping states in the accumulated channel region during operation. Here, we show that by using a source-gated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::50bc5a46627a9dcfa62f9d226c9c4e7e
https://doi.org/10.1063/1.1772518
https://doi.org/10.1063/1.1772518
Autor:
J. M. Shannon, A. D. Annis
Publikováno v:
Philosophical Magazine Letters. 72:323-329
In general, current transport through thin-film metal-semiconductor-metal diodes containing hydrogenated silicon-rich amorphous silicon nitride (a-SiNx: H) is determined by electron tunnelling through the potential barriers at the metal-semiconductor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f5c7a15547d396cb4042b2ddb556a0a
https://doi.org/10.1080/09500839508242470
https://doi.org/10.1080/09500839508242470
Publikováno v:
Journal of Applied Physics. 74:2581-2589
The physical mechanisms that determine the current transport in reverse‐biased Schottky diodes on undoped ‘‘device‐grade’’ hydrogenated amorphous silicon (a‐Si:H) are elucidated. The current‐voltage (J‐V) curves for several Schottky
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0223e23ac6b4dcc9f075c1b795125679
https://doi.org/10.1063/1.354671
https://doi.org/10.1063/1.354671
Publikováno v:
Applied Physics Letters. 76:715-717
Amorphous disilicides of the refractory metals chromium and molybdenum have been formed at room temperature in hydrogenated amorphous silicon. The silicides are produced by radiation-enhanced diffusion during bombardment through a thin metal film on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86f783f401de4b50007932572d2fd0a3
https://doi.org/10.1063/1.125871
https://doi.org/10.1063/1.125871
Publikováno v:
The American journal of pathology. 39(6)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::ac2e0529e73e00d19c6bde5d10e578e7
https://pubmed.ncbi.nlm.nih.gov/19971010
https://pubmed.ncbi.nlm.nih.gov/19971010
Publikováno v:
British Journal of Cancer
Protection of rat spermatogenic epithelium from damage induced by procarbazine chemotherapy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::422b16284eff0162eb9211c7e1b50a29
http://europepmc.org/articles/PMC1971720
http://europepmc.org/articles/PMC1971720
Compared with the field-effect transistor, the source-gated transistor has a much lower saturation voltage and higher output impedance. These features are investigated using computer modeling for amorphous silicon transistors operated at high current
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8ecd3da0873afe9308ba19f76e976644
https://surrey.eprints-hosting.org/12/
https://surrey.eprints-hosting.org/12/
Autor:
K. J. B. M. Nieuwesteeg, J. M. Shannon
Publikováno v:
Applied Physics Letters. 62:1815-1817
The tunneling effective mass of electrons in undoped a‐Si:H has been determined from measurements on Schottky diodes operating with high reverse fields. Under these conditions, the change of current with electric field is a sensitive function of ef
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f45925c0ebba092d51edbdb4e8e6863d
https://doi.org/10.1063/1.109558
https://doi.org/10.1063/1.109558