Zobrazeno 1 - 10
of 38
pro vyhledávání: '"J M, Gaines"'
Publikováno v:
Journal of Crystal Growth. 159:582-585
We have studied the lateral waveguiding properties of gain-guided and index-guided II–VI lasers under pulsed conditions and their influence on threshold current density J th and differential quantum efficiency η. Thermal index-guiding was found to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84fdabc17b6fba2762e9f77ce71598c1
https://doi.org/10.1016/0022-0248(95)00587-0
https://doi.org/10.1016/0022-0248(95)00587-0
Autor:
G.D. U'Ren, Kevin W. Haberern, G.M. Haugen, S. Guha, S.P. Herko, J. M. Gaines, John Petruzzello, Thomas M. Marshall
Publikováno v:
Journal of Crystal Growth. 159:573-581
We have used a combination of techniques to characterize low defect density (≤ 10 5 cm −2 ) blue-green separate confinement heterostructure lasers. The limits of lattice mismatch between the substrate and quaternary cladding layers that result in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f5e7814ec857baa0ae183c23f9f4113
https://doi.org/10.1016/0022-0248(95)00880-2
https://doi.org/10.1016/0022-0248(95)00880-2
Publikováno v:
Journal of Applied Physics. 76:3988-3993
Threshold current densities and wavelengths of gain maximum and longitudinal modes have been determined as a function of temperature for various laser structures. The onset of intrapulse heating has been studied and interpreted. In Zn0.92Mg0.08S0.12S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7259a00b2840d18c8812f21660017eed
https://doi.org/10.1063/1.357344
https://doi.org/10.1063/1.357344
Publikováno v:
Journal of Crystal Growth. 138:686-691
Pseudomorphic heterostructures with increased electrical and optical confinement were used to improve II–VI blue-green laser operating characteristics. These lasers employ Zn 1− x Mg x S y Se 1− y alloys for the cladding layers, ZnS y Se 1− y
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8af82c93c6bbbf1606ad026e94d7e189
https://doi.org/10.1016/0022-0248(94)90891-5
https://doi.org/10.1016/0022-0248(94)90891-5
Autor:
J. M. Gaines
Publikováno v:
Journal of Crystal Growth. 137:187-194
The paper reviews the use of reflection high-energy electron diffraction (RHEED) oscillations to characterize molecular beam epitaxy (MBE) growth of II/VI wide-bandgap semiconductor materials. RHEED oscillations are routinely used in III/V crystal gr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::087e0f4fe971b30eb48ae4e248b88af8
https://doi.org/10.1016/0022-0248(94)91270-x
https://doi.org/10.1016/0022-0248(94)91270-x
Publikováno v:
Journal of Applied Physics. 75:63-67
We have investigated the structural characteristics of II‐VI separate confinement heterostructure lasers grown on GaAs substrates and containing Zn1−xMgxSySe1−y quaternary cladding layers, ZnSe or ZnSySe1−y guiding layers and Zn1−zCdzSe qua
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::153dc65adf1ab46fda974f7ab9d681cd
https://doi.org/10.1063/1.355804
https://doi.org/10.1063/1.355804
Publikováno v:
Journal of Applied Physics. 73:2835-2840
We describe the structural properties of ZnSe grown on (001) GaAs by migration enhanced epitaxy, and show that the heterointerface plays a significant role in determining the structural properties of the ZnSe films. Films were grown with thicknesses
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e1622f999f0f21ad71d8f8a69a05fb0
https://doi.org/10.1063/1.353035
https://doi.org/10.1063/1.353035
Publikováno v:
Applied Physics Letters. 67:1987-1989
Carrier confinement in blue‐green II–VI semiconductor lasers was investigated. For devices longer than 300 μm an energy barrier of 260–280 meV was found to confine the electrons, the carrier being mainly responsible for leakage, within the act
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93eac8acc6f5e2377837df0bfe241a53
https://doi.org/10.1063/1.114762
https://doi.org/10.1063/1.114762
Publikováno v:
Applied Physics Letters. 67:659-661
We present an analysis of optical data from ZnSe strained‐layer quantum wells surrounded by Zn1−xMgxSySe1−y barrier layers to extract the band offsets. If we use only the ground state transitions from our experimental data, no unique value of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a0e68742c35dfbec78cf67e2f257c73
https://doi.org/10.1063/1.115194
https://doi.org/10.1063/1.115194