Zobrazeno 1 - 10
of 3 157
pro vyhledávání: '"J M, Anthony"'
Autor:
Li, Zihua1 (AUTHOR), Lu, Hengli1 (AUTHOR), Fan, Limin2 (AUTHOR), Ma, Xiaoyi2 (AUTHOR), Duan, Zhengwei1 (AUTHOR), Zhang, Yiwei1 (AUTHOR), Fu, Yuesong1 (AUTHOR), Wang, Sen1 (AUTHOR), Guan, Yonghao1 (AUTHOR), Yang, Dong1 (AUTHOR), Chen, Qingjing3 (AUTHOR) qingjingchen@ldy.edu.rs, Xu, Tianyang1 (AUTHOR) 1911627@tongji.edu.cn, Yang, Yunfeng4 (AUTHOR) yyf13088@rjh.com.cn
Publikováno v:
Advanced Science. 11/13/2024, Vol. 11 Issue 42, p1-12. 12p.
Autor:
Delfani, Negin1 (AUTHOR), Daneshyar, Mohsen1 (AUTHOR), Farhoomand, Parviz1 (AUTHOR), Payvastegan, Sina1 (AUTHOR) s.payvastegan@urmia.ac.ir, Alijoo, Younes Ali1 (AUTHOR), Najafi, Gholamreza2 (AUTHOR)
Publikováno v:
Veterinary Medicine & Science. Nov2024, Vol. 10 Issue 6, p1-13. 13p.
Publikováno v:
Journal of Electronic Materials. 30:1527-1531
Low-K dielectric films have reduced hardness and modulus relative to traditional dielectric materials. There are many potential challenges associated with these materials to integrate with integrated circuit (IC) technologies. It is important to eval
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5f40f6d6cd8d4a72cca19292f7ef00c
https://doi.org/10.1007/s11664-001-0169-x
https://doi.org/10.1007/s11664-001-0169-x
Publikováno v:
Journal of Applied Physics. 89:5243-5275
Many materials systems are currently under consideration as potential replacements for SiO2 as the gate dielectric material for sub-0.1 μm complementary metal–oxide–semiconductor (CMOS) technology. A systematic consideration of the required prop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37b808d1fbd689cec9d0c5326e3b4a9a
https://doi.org/10.1063/1.1361065
https://doi.org/10.1063/1.1361065
Publikováno v:
Integrated Ferroelectrics. 21:355-366
The deposition temperature dependence of Ba0.7Sr0.3TiO3 (BST) thin film physical and electrical properties was investigated. Films were deposited between 250 and 500°C by electron cyclotron resonance (ECR) plasmaenhanced liquid source metalorganic c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78a07cf0c5aceadc39f3cbcd61b1b7b2
https://doi.org/10.1080/10584589808202076
https://doi.org/10.1080/10584589808202076
Autor:
S. F. Hicks, B. T. Meehan, B. M. Haas, C. M. Davoren, J. M. Anthony, B. H. Benedict, C. L. Lundstedt, J. R. Vanhoy
Publikováno v:
Physical Review C. 52:2387-2400
The excited levels of {sup 142}Ce have been studied using the ({ital n},{ital n}{sup {prime}}{gamma}) reaction. Excitation functions, angular distributions, and Doppler shifts were measured for {gamma} rays from levels up to an excitation energy of 3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e8c4ae7b5120b56aad9ad57715baa14
https://doi.org/10.1103/physrevc.52.2387
https://doi.org/10.1103/physrevc.52.2387
Autor:
Pratt, Amy S.1 prattat@ucmail.uc.edu, Durant, Kathleen2, Peña, Elizabeth D.3, Bedore, Lisa M.4
Publikováno v:
Journal of Speech, Language & Hearing Research. Jul2024, Vol. 67, p2244-2268. 25p.
Publikováno v:
Veterinary and comparative oncology. 11(2)
The objective of this study was to develop a clinically applicable technique to visualize the medial retropharyngeal, superficial cervical, axillary, superficial inguinal and medial iliac lymph nodes on radiographs. Direct and indirect lymphangiograp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::48e3394990ce535d72f068516d9779ae
https://pubmed.ncbi.nlm.nih.gov/22630597
https://pubmed.ncbi.nlm.nih.gov/22630597
Autor:
D. H. Lee, J. M. Sanders, J. M. Anthony, James H. McGuire, Patrick Richard, Y. D. Wang, Theo J. M. Zouros
Publikováno v:
Physical Review A. 46:1374-1387
Cross sections for 1s ionization of the 1s 2 2s 2 and 1s 2 2s2p 3 P (metastable) states of C 2+ and O 4+ ions in 0.5-1.8 MeV/u collisions with H 2 and He targets were measured using projectile Auger electron spectroscopy at 0 o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d3edbe1e80e419ebde28dee339a1516
https://doi.org/10.1103/physreva.46.1374
https://doi.org/10.1103/physreva.46.1374
Autor:
H. D. Shih, A. Vigliante, T. D. Golding, J. M. Anthony, J. T. Zborowski, P. C. Chow, W. C. Fan
Publikováno v:
Journal of Applied Physics. 71:5908-5912
We have used the technique of molecular beam epitaxy to grow InAs on GaSb, GaSb on InAs, and InAs/InxGa1−xSb (0≤x≤0.4) multilayered structures and have performed a detailed investigation of the layers and resultant interfaces. The structures we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e2285373cfb0b6d60c8f0960cd34d54
https://doi.org/10.1063/1.350490
https://doi.org/10.1063/1.350490