Zobrazeno 1 - 10
of 92
pro vyhledávání: '"J L Merz"'
Publikováno v:
Microscopy of Semiconducting Materials, 1983
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c968016a4e42b6f547e339b3b2ec1b03
https://doi.org/10.1201/9781003069614-18
https://doi.org/10.1201/9781003069614-18
Autor:
V. Yu. Davydov, Andrey Bogdanov, S. Rouvimov, M. M. Kulagina, Daniele Barettin, S. T. Moroni, J. L. Merz, Emanuele Pelucchi, A. Gocalinska, Alexander Mintairov, A. S. Vlasov, S. I. Troshkov, D. V. Lebedev, Alexander N. Smirnov, J. Kapaldo, Gediminas Juska
Formation, emission, and lasing properties of strain-free InP(As)/AlInAs quantum dots (QDs) embedded in AlInAs microdisk (MD) cavity were investigated using transmission electron microscopy and photoluminescence (PL) techniques. In MD structures, the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::29e69a2b21636d8da0f1e2d06cd5a5fd
Autor:
P. D. Floyd, J. L. Merz
Publikováno v:
Journal of Applied Physics. 76:5524-5527
The variation of the reflectivity and stopband width of disordered GaAs/(Al,Ga)As distributed Bragg reflectors (DBRs) is studied by thermal annealing of semiconductor DBRs and modeled by simulating interdiffusion of Al and Ga at the interfaces within
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6fe1fecd6379f4790b5a4cfaebc5a290
https://doi.org/10.1063/1.357153
https://doi.org/10.1063/1.357153
Publikováno v:
Journal of Electronic Materials. 23:283-287
We have investigated the phenomenon of layer disordering in CdZnSe/ZnSe strained layer superlattices (SLSs) by Ge diffusion and have fabricated CdZnSe/ ZnSe optical waveguides using the Ge-induced disordering. Both the as-grown sample and the sample
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24c1633c25973393b145e352de1d3813
https://doi.org/10.1007/bf02670637
https://doi.org/10.1007/bf02670637
Publikováno v:
Applied optics. 13(7)
The electron lithographic fabrication of high quality diffraction gratings with periods in the 0.25-microm < a(o) < 1.5-microm range is reported. The negative electron resist employed is a copolymer of glycidyl methacrylate and ethyl acrylate with a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6822e06f90116e8c28b1e9974384591d
https://pubmed.ncbi.nlm.nih.gov/20134533
https://pubmed.ncbi.nlm.nih.gov/20134533
Publikováno v:
Journal of Applied Physics. 72:5047-5054
The gain‐current coefficient and current density at transparency of GaAs/AlGaAs and InGaAs/GaAs/AlGaAs quantum‐well (QW) laser structures have been calculated as a function of the QW thickness by a straightforward numerical calculation. The optim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65de4e8f9982d97770dc4c55c8429d30
https://doi.org/10.1063/1.352033
https://doi.org/10.1063/1.352033
Publikováno v:
Journal of Applied Physics. 72:855-860
We present a study of the effect of the active cavity layer thickness variations on the operating characteristics of normally on low voltage high performance asymmetric Fabry–Perot modulators. For a modulator consisting of 25.5 periods of 100 A GaA
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::85a40dc37356dc3c30d7b69b29421798
https://doi.org/10.1063/1.351758
https://doi.org/10.1063/1.351758
Publikováno v:
Journal of Applied Physics. 69:2857-2861
Waveguide structures for quantum well (QW) lasers are analyzed numerically by a straightforward 2×2 matrix approach. It is shown that this approach is capable of analyzing separate‐confinement heterostructure (SCH) waveguides, having any arbitrari
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ff590b3e948e7f37cec4241ea8893c5
https://doi.org/10.1063/1.348593
https://doi.org/10.1063/1.348593
Autor:
A. M. Mintairov, S. Raymond, J. L. Merz, F. C. Peiris, S. Lee, U. Bindley, J. K. Furdyna, V. G. Melehin, K. Sadchikov
Publikováno v:
Semiconductors. 33:1021-1023
We report optical measurements (photoluminescence, Raman scattering, and infrared reflectance) of direct band gap and of optical phonon energies of BexZn1−xSe alloys grown by MBE on (001) GaAs substrates for a wide range of Be concentrations. The h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5f4f7b153a2d198c3eec693562e44ae
https://doi.org/10.1134/1.1187830
https://doi.org/10.1134/1.1187830
Publikováno v:
Journal of Applied Physics. 67:6461-6465
We present an observation of electric‐field‐induced excitonic quenching in GaAs/AlGaAs triangular quantum wells, grown by pulsed‐beam molecular‐beam‐epitaxy technique. We have measured photocurrent spectra for both symmetric and asymmetric
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5d7a0d7f81f1cef573a0079ee79de67
https://doi.org/10.1063/1.345120
https://doi.org/10.1063/1.345120