Zobrazeno 1 - 7
of 7
pro vyhledávání: '"J L Benjamin"'
Autor:
J L Benjamin, C R H Hedin, A Koutsoumpas, S C Ng, A L Hart, M A Kamm, J D Sanderson, S C Knight, A Forbes, A J Stagg, K Whelan, J O Lindsay
Publikováno v:
Gut. 59:A1.3-A2
Publikováno v:
Journal of The Electrochemical Society. 135:172-176
On implante des protons dans la region epitaxiale dopee au phosphore d'une grille de transistor isolee. On etudie les changements de resistance en fonction des differentes doses d'implantation
Publikováno v:
Laboratory investigation; a journal of technical methods and pathology. 31(5)
The fabrication of large-area solar cells (0.16 cm/sup 2/) on GaAs and AlGaAs structures with a new passivating coating, pyrolytic Si/sub 3/N/sub 4/, is demonstrated. Results in this study illustrate a near-oxide-free interface between GaAs and the S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e1748031538020422e956b9a92942ab
https://doi.org/10.2172/6406702
https://doi.org/10.2172/6406702
Autor:
Lacger, J. L. Benjamin de.
Th.--Méd.--Montpellier, 1830?
Voyez tom. 1. N ° 30. Montpellier.
Voyez tom. 1. N ° 30. Montpellier.
Externí odkaz:
http://catalogue.bnf.fr/ark:/12148/cb36897942j
Autor:
Olivier, R. J. L. Benjamin.
Th.--Méd.--Paris, 1859-07-06.
Voyez tome 9, n ° 140, Paris, 1859.
Voyez tome 9, n ° 140, Paris, 1859.
Externí odkaz:
http://catalogue.bnf.fr/ark:/12148/cb36916662m
Publikováno v:
Transplantation proceedings. 4(4)