Zobrazeno 1 - 10
of 46
pro vyhledávání: '"J L, Castaño"'
Autor:
F. J. Rodríguez-Cuadrado, J. L. Castaño-Fernández, M. Elosua-González, G. Roustan-Gullón, F. Alfageme-Roldán
Publikováno v:
Journal of Ultrasound. 26:307-311
Publikováno v:
Materials Science and Engineering: B. :525-528
CdTe films were grown by physical vapour deposition onto alumina, glass and silicon substrates. The best growth conditions were a source temperature in the range 700–830 °C, a substrate temperature from 450 to 550 °C and a growth time of about 4
Autor:
Michael Fiederle, J. L. Castaño, V. Babentsov, Victoria Corregidor, T. Feltgen, Ernesto Diéguez, Klaus-Werner Benz
Publikováno v:
Crystal Research and Technology. 36:535-542
Semi-insulating CdTe single crystals doped with Ga were grown from the vapour phase by the modified Markov technique MMT. The study of the resistivity map in the cross-sections cut along the growth direction has been performed. The compensation pheno
Publikováno v:
Optical Materials. 17:259-262
We report here results on buried-channel optical waveguides on GaAsP/GaAs material. These semiconductor devices were fabricated using chemical beam epitaxy (CBE). We discuss a method using epitaxial growth by selective area chemical beam epitaxy (SA-
Autor:
Javier Piqueras, Bianchi Méndez, J. L. Castaño, Ernesto Diéguez, José Luis Plaza, Pedro Hidalgo
Publikováno v:
E-Prints Complutense. Archivo Institucional de la UCM
instname
E-Prints Complutense: Archivo Institucional de la UCM
Universidad Complutense de Madrid
instname
E-Prints Complutense: Archivo Institucional de la UCM
Universidad Complutense de Madrid
In this work pure and Gd-doped GaSb ingots with different dopant concentrations were grown by the Bridgman Method. The compositional and electrical analysis carried out on these materials have shown the dependence of these results on the initial dopa
Publikováno v:
The Journal of Physical Chemistry. 99:13659-13663
Publikováno v:
Journal of the Chinese Chemical Society. 42:393-398
A TEA CO2-laser induced SF6 + Ba beam-surface ionization process has been studied when vibrational excitation of SF6 molecules was carried out at (and near) the polished surface of the electrically heated up to 675 K polycristalline Ba. Electron emis
Publikováno v:
Laser Chemistry. 16:75-82
This paper reports on the simultaneous detection of Mg, Mn, Fe and Pb in Al samples using laser-induced breakdown spectroscopy and optical multichannel analysis of the photoablated microplasma. Using calibrated samples, well characterized linear work
Autor:
Alex Fauler, Ernesto Diéguez, J. L. Castaño, Michael Fiederle, Victoria Corregidor, Klaus-Werner Benz, V. Babentsov
Publikováno v:
Applied Physics Letters. 81:5153-5155
We report the possibility to grow semi-insulating (Cd,Zn)Te:Se crystals by the modified Markov method (MMM) from the vapor phase. When oriented Cd(Te,Se) seed material was used for the growth, lattice matching and doping with Se resulted in an increa
Publikováno v:
Journal of The Electrochemical Society. 138:3039-3042
Direct writing laser doping from doped spun‐on glasses is reported. Under quasistationary regime, diffusion depths over 1 μm can be controlled across the laser power. Sheet resistances from below 20 up to 600 Ω/ for boron‐diffused samples and u