Zobrazeno 1 - 10
of 55
pro vyhledávání: '"J Jussot"'
Autor:
D P Lozano, M Mongillo, X Piao, S Couet, D Wan, Y Canvel, A M Vadiraj, Ts Ivanov, J Verjauw, R Acharya, J Van Damme, F A Mohiyaddin, J Jussot, P P Gowda, A Pacco, B Raes, J Van de Vondel, I P Radu, B Govoreanu, J Swerts, A Potočnik, K De Greve
Publikováno v:
Materials for Quantum Technology, Vol 4, Iss 2, p 025801 (2024)
The performance of state-of-the-art superconducting quantum devices is currently limited by microwave dielectric loss at different interfaces. α -tantalum is a superconductor that has proven effective in reducing dielectric loss and improving device
Externí odkaz:
https://doaj.org/article/f667fe9bc976494d925c93275af4b5ca
Autor:
J. Verjauw, R. Acharya, J. Van Damme, Ts. Ivanov, D. Perez Lozano, F. A. Mohiyaddin, D. Wan, J. Jussot, A. M. Vadiraj, M. Mongillo, M. Heyns, I. Radu, B. Govoreanu, A. Potočnik
Publikováno v:
npj Quantum Information, Vol 8, Iss 1, Pp 1-7 (2022)
Abstract As the superconducting qubit platform matures towards ever-larger scales in the race towards a practical quantum computer, limitations due to qubit inhomogeneity through lack of process control become apparent. To benefit from the advanced p
Externí odkaz:
https://doaj.org/article/71bd3002224e4daab1fe7e4c94ec8979
Akademický článek
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Autor:
Zubair Ahmed, Surajit Sutar, Abhinav Gaur, Iuliana Radu, Dennis Lin, Inge Asselberghs, Marc Heyns, Benjamin Groven, Quentin Smets, Devin Verreck, Goutham Arutchelvan, J. Jussot
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-11 (2021)
Scientific Reports
Scientific Reports
Two-dimensional semiconducting materials are considered as ideal candidates for ultimate device scaling. However, a systematic study on the performance and variability impact of scaling the different device dimensions is still lacking. Here we invest
Akademický článek
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Autor:
Stefan Kubicek, Marc Heyns, Fahd A. Mohiyaddin, Boon Teik Chan, Roy Li, George Simion, Iuliana Radu, Bogdan Govoreanu, Nard Dumoulin Stuyck, J. Jussot
Publikováno v:
IEEE Electron Device Letters. 41:1253-1256
Recent advances demonstrated the feasibility of realizing spin-based quantum computation in Silicon. To make further progress towards a large-scale implementation of spin-based quantum device technologies, a reliable fabrication process with good yie
Autor:
M. Mongillo, A. Potocnik, J. Verjauw, F.A. Mohiyaddin, T. Ivanov, R Acharya, X. Piao, D.Perez Lozano, D. Wan, A. Pacco, J. Jussot, L. Souriau, A. M. Vadiraj, J. Swerts, S Couet, L. Goux, B. Govoreanu, P. Iuliana, null Radu
Publikováno v:
2021 IEEE International Electron Devices Meeting (IEDM).
Akademický článek
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Autor:
Stefan Kubicek, N. I. Dumoulin Stuyck, Y. Canvel, Laurent Souriau, Bogdan Govoreanu, M. Shehata, Clément Godfrin, Iuliana Radu, Danny Wan, Rohith Acharya, George Simion, R. Li, Jeroen Verjauw, Bertrand Parvais, S. Narasimhamoorthy, Antoine Pacco, Ts. Ivanov, Boon Teik Chan, S. Van Winckel, Massimo Mongillo, Steven Brebels, Sebastien Couet, A. Grill, A. Potocnik, J. Jussot, Fahd A. Mohiyaddin, A. Elsayed, Jan Craninckx, X. Piao
Publikováno v:
Scopus-Elsevier
VLSI Circuits
VLSI Circuits
Building quantum computers requires not only a large number of qubits with high fidelity and low variability, but also a large amount of analog and digital components to drive the qubits. Larger arrays of solid-state qubits with high fidelity and low
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::718648348332c1b5f373ceaa17a51108
https://hdl.handle.net/20.500.14017/59d65559-85f8-47bf-8752-574c58dc6fd5
https://hdl.handle.net/20.500.14017/59d65559-85f8-47bf-8752-574c58dc6fd5
Autor:
J. Jussot, R. Li, M.M. Heyns, Stefan Kubicek, M. Shehata, George Simion, Y. Canvel, Bogdan Govoreanu, N. I. Dumoulin Stuyck, Boon Teik Chan, Iuliana Radu, Ludovic Goux, Clément Godfrin, Fahd A. Mohiyaddin, A. Elsayed
Publikováno v:
2021 Symposium on VLSI Circuits.
Larger arrays of electron spin qubits require radical improvements in fabrication and device uniformity. Here we demonstrate excellent qubit device uniformity and tunability from 300K down to mK temperatures. This is achieved, for the first time, by