Zobrazeno 1 - 10
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pro vyhledávání: '"J J Dubowski"'
Publikováno v:
Journal of Physics: Conference Series. 59:50-53
Eighth International Conference on Laser Ablation (COLA), September 11-16, 2005, Banff, Canada
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Publikováno v:
Journal of Physics: Conference Series. 59:605-609
The influence of surface irradiation of GaAs with a KrF excimer laser on the magnitude of the quantum well intermixing (QWI) effect has been investigated on GaAs/AlGaAs and GaAs/AlGaAs/InAlGaAs QWs heterostructures. The selective area irradiation thr
Autor:
J. J. Dubowski, S. M. Ryabchenko, A. V. Komarov, F. V. Kyrychenko, Yu. G. Semenov, V. G. Abramishvili
Publikováno v:
Acta Physica Polonica A. 94:165-176
Publikováno v:
Journal of Applied Physics. 83:4258-4263
Inelastic light scattering from first- and second-order longitudinal optic phonons using infrared excitation near the direct gap (1.6 eV) of CdTe quantum wells in CdTe/Cd0.9Mn0.1Te superlattices grown on (001) Cd0.95Zn0.05Te has revealed higher lying
Publikováno v:
Solid State Communications. 103:239-242
The inelastic light scattering spectra of acoustic modes have been measured for a series of CdTe Cd 1−x Mn x Te superlattices with x = 0.1. Analysis of the Brillouin to folded acoustic mode intensities yields a photoelastic coupling coefficient rat
Publikováno v:
Journal of Applied Physics. 75:3045-3048
Photoluminescence (PL) emitted from (111)Cd1−xMnxTe/(111)GaAs:Si heterojunctions produced using pulsed laser evaporation and epitaxy (PLEE) has been studied at 11.5 K. The heterojunctions show PL from the substrate E0 and E0+Δ0 gap regions as well
Publikováno v:
Canadian Journal of Physics. 70:1027-1034
The photoreflectance and piezoreflectance spectra of CdTe–Cd0.9Mn0.1 Te multiple quantum wells and superlattices grown by pulsed laser evaporation and epitaxy display series of signatures that are attributed to free exciton transitions occurring be
Publikováno v:
Journal of Applied Physics. 71:2811-2815
Photoluminescence, photoreflectance, and photovoltaic measurements have been used to characterize Cd1−xMnxTe (CMT) epilayers, 0.5–1.4 μm thick, grown on (001) InSb by pulsed laser evaporation and epitaxy. The measurements indicate high‐quality
Autor:
J. J. Dubowski
Publikováno v:
Acta Physica Polonica A. 80:221-244
The application of pulsed 1asers for vaporization (ablation) of solid targets appears to be the most natural way to produce high purity fluxes of atoms/ions suitable for epitaxial growth of thin films. Since the early 1960's this unique approach has
Publikováno v:
Journal of Applied Physics. 69:7782-7787
We have used Raman scattering to study a series of thin (111) Cd1−xMnxTe (CMT) films grown on (111) GaAs by pulsed laser evaporation and epitaxy. We show Raman spectra of CMT with 0.059≤x≤0.70, at 80 K. Samples with x≳0.4 exhibit up to 8th or