Zobrazeno 1 - 10
of 19
pro vyhledávání: '"J Iwan Davies"'
Autor:
Bruno Romeira, Ricardo Adão, Jana B Nieder, Qusay Al-Taai, Weikang Zhang, Robert H Hadfield, Edward Wasige, Matěj Hejda, Antonio Hurtado, Ekaterina Malysheva, Victor Dolores Calzadilla, João Lourenço, D Castro Alves, José M L Figueiredo, Ignacio Ortega-Piwonka, Julien Javaloyes, Stuart Edwards, J Iwan Davies, Folkert Horst, Bert J Offrein
Publikováno v:
Neuromorphic Computing and Engineering, Vol 3, Iss 3, p 033001 (2023)
Nanophotonic spiking neural networks (SNNs) based on neuron-like excitable subwavelength (submicrometre) devices are of key importance for realizing brain-inspired, power-efficient artificial intelligence (AI) systems with high degree of parallelism
Externí odkaz:
https://doaj.org/article/d4f44c3f09dc4100942fd993a58446d5
Autor:
Jack Baker, Sara Gillgrass, Craig P. Allford, Tomas Peach, Curtis Hentschel, Tracy Sweet, J. Iwan Davies, Samuel Shutts, Peter M. Smowton
Publikováno v:
IEEE Photonics Journal, Vol 14, Iss 3, Pp 1-10 (2022)
Stripped-back representative VCSEL devices with a simple fabrication process that very closely approaches the performance of standard BCB-planarised devices have been produced. These VCSEL Quick Fabrication (VQF) devices achieve threshold currents on
Externí odkaz:
https://doaj.org/article/995cdd934a0644ab9abe36673c0bea49
Autor:
Jack Baker, Craig. P. Allford, Sara. Gillgrass, Tomas. Peach, James Meiklejohn, Curtis Hentschel, Wyn Meredith, Denise Powell, Tracy Sweet, Mohsin Haji, J. Iwan Davies, Samuel Shutts, Peter M. Smowton
Publikováno v:
IET Optoelectronics. 17:24-31
Autor:
Jack Baker, Craig P. Allford, Sara Gillgrass, T. Peach, Andrew D. Johnson, Andrew M. Joel, Sung Wook Lim, Matthew Geen, J. Iwan Davies, Samuel Shutts, Peter M. Smowton
Publikováno v:
2022 IEEE Photonics Conference (IPC).
Autor:
Jack Baker, Sara Gillgrass, Tomas Peach, Craig P. Allford, J. Iwan Davies, Andrew D. Johnson, Andrew M. Joel, Sung Wook Lim, Samuel Shutts, Peter M. Smowton
Publikováno v:
Semiconductor Lasers and Laser Dynamics X.
Autor:
J. Iwan Davies, Andrew D. Johnson, Rodney I. Pelzel, Matthew D. Geen, Andrew M. Joel, Sung Wook Lim
Publikováno v:
Journal of Crystal Growth. 605:127031
Autor:
Sara Gillgrass, Jack Baker, Curtis Hentschel, J. Iwan Davies, Craig P. Allford, Samuel Shutts, Peter Michael Smowton
sub-mA threshold currents are achieved for VCSELs using a simplified fabrication process which employs etched oxidation-vias for definition of the VCSEL aperture, as well as ease in formation of a bond pad without the need for bisbenzocyclobutane pla
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eede753d1e2ad51dd09c569f9f529f28
https://orca.cardiff.ac.uk/id/eprint/150499/1/IPC-2021-Paper-VQF-PrePrintCopyrightStatement.pdf
https://orca.cardiff.ac.uk/id/eprint/150499/1/IPC-2021-Paper-VQF-PrePrintCopyrightStatement.pdf
Autor:
Curtis Hentschel, Sara-Jayne Gillgrass, Craig P. Allford, Samuel Shutts, David Hayes, Jack Baker, Peter Michael Smowton, Josie Nabialek, Richard Forrest, J. Iwan Davies
Publikováno v:
Applied Sciences, Vol 11, Iss 9369, p 9369 (2021)
Applied Sciences
Volume 11
Issue 20
Applied Sciences
Volume 11
Issue 20
A systematic analysis of the performance of VCSELs, fabricated with a decreasing number of structural elements, is used to assess the complexity of fabrication (and therefore time) required to obtain sufficient information on epitaxial wafer suitabil
Autor:
Zhibo Li, Sara-Jayne Gillgrass, Richard Forrest, Curtis Hentschel, J. Iwan Davies, David Hayes, Peter Michael Smowton, Jack Baker, Wyn Meredith, Josie Nabialek, Craig P. Allford, Samuel Shutts
Publikováno v:
2021 IEEE Photonics Conference (IPC).
We report direct measurements of the optical gain profile for a vertical cavity surface emitting laser (VCSEL) epitaxial structure, by characterising the transverse electric (TE) in-plane net modal gain using the segmented contact method.
Autor:
Luna Ayllón, Iván Lombardero, Satrio Wicaksono, Carlos Algora, Iván García, Soon Fatt Yoon, Efraín Ochoa-Martínez, Mario Ochoa, Kian Hua Tan, Mercedes Gabás, Wan Khai Loke, J. Iwan Davies, Andrew Johnson, Ignacio Rey-Stolle
Publikováno v:
AIP Conference Proceedings, 2016, 1766(1), 080003
12th International Conference on Concentrator Photovoltaic Systems (CPV-12), Freiburg, Germany, 2016
12th International Conference on Concentrator Photovoltaic Systems (CPV-12), Freiburg, Germany, 2016
Technology Computer Aided Design modeling is used to examine the performance under light concentration of a 4-J solar cell Ge-based that includes a 1-eV MBE-grown dilute nitride subcell. The 1-eV solar cell is modeled and examined by using material p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::62b16ad660ba9d71c09f8cb511cbb111
https://hdl.handle.net/10902/29282
https://hdl.handle.net/10902/29282