Zobrazeno 1 - 10
of 18
pro vyhledávání: '"J H Neethling"'
Autor:
E J, Olivier, J H, Neethling, R E, Kroon, S R, Naidoo, C S, Allen, H, Sawada, P A, van Aken, A I, Kirkland
Publikováno v:
Nature materials. 17(3)
In the past decades, many efforts have been devoted to characterizing {001} platelet defects in type Ia diamond. It is known that N is concentrated at the defect core. However, an accurate description of the atomic structure of the defect and the rol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::30d7412452c29514d6c83c21b52685c2
https://pubmed.ncbi.nlm.nih.gov/29467507
https://pubmed.ncbi.nlm.nih.gov/29467507
Publikováno v:
International Biodeterioration & Biodegradation. 63:559-568
Jackson, V. A., Paulse, A. N., Bester, A. A., Neethling, J. H., Khan, S., and Khan, W. (2009). Bioremediation of metal contamination in the Plankenburg River, Western Cape, South Africa. International Biodeterioration & Biodegradation, 63(5), 559-568
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d4719a7fd324676e88f2e46cf035727
https://doi.org/10.1016/j.ibiod.2009.03.007
https://doi.org/10.1016/j.ibiod.2009.03.007
Publikováno v:
physica status solidi (c). 1:2343-2348
The size distribution of large, self-assembled InAs islands grown by metalorganic vapour phase epitaxy on (001) GaAs has been investigated by transmission electron microscopy. The layers grown at 500 �C resulted in large dome-shaped islands, rangin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::825b58e74f263f50be152f9a3ac6e9a0
https://doi.org/10.1002/pssc.200404836
https://doi.org/10.1002/pssc.200404836
Publikováno v:
Journal of Materials Science. 36:3997-4002
A TEM investigation of MOVPE grown Zn3As2 revealed the presence of a thin epitaxial Zn3P2 intermediate layer between the InP substrate and the Zn3As2 overgrowth. A model of the orientation relationships between Zn3As2, Zn3P2 and InP is presented. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30c7721f55f2ff3933faef747f3105c9
https://doi.org/10.1023/a:1017934624840
https://doi.org/10.1023/a:1017934624840
Publikováno v:
Journal of Materials Science. 29:2017-2024
The nucleation and growth of undoped gallium arsenide (GaAs) epitaxial layers, grown by metalorganic vapour phase epitaxy (MOVPE) on Si (111) substrates were investigated by transmission electron microscopy (TEM). The initial stages of epitaxial grow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d34dcdc5e4484c690ab5f420f0033ec
https://doi.org/10.1007/bf01154676
https://doi.org/10.1007/bf01154676
Autor:
V. Alberts, J. H. Neethling
Publikováno v:
Journal of Applied Physics. 75:3435-3440
Multiple twinning in GaAs epitaxial layers grown on Si by metalorganic vapor phase epitaxy has been studied by transmission electron microscopy. The primary and multiple twin reflections in the diffraction patterns were indexed in terms of matrix ind
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b416ca98e6f62a8409de5ab3be22d892
https://doi.org/10.1063/1.356103
https://doi.org/10.1063/1.356103
Publikováno v:
Journal of Materials Science: Materials in Electronics. 3:240-243
The nucleation and growth of Ge on Si(111) substrates were investigated by transmission electron microscopy (TEM). It was found that growth is initiated by the formation of three-dimensional islands. At a very early stage of growth a polycrystalline
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36b9d88481f8543ca81ed41dfefd884c
https://doi.org/10.1007/bf00703034
https://doi.org/10.1007/bf00703034
Publikováno v:
Journal of The Electrochemical Society. 139:2010-2013
This paper discusses infrared reflectance spectra of boron implanted GaAs investigated in the range of 46000-800 cm{sup {minus}1}, based on an analysis of electromagnetic wave propagation. The implanted wafers were analyzed after thermal annealing fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9fb1d6c745482cf73702a54b463fcce2
https://doi.org/10.1149/1.2069536
https://doi.org/10.1149/1.2069536
Publikováno v:
Materials Letters. 13:65-79
The nucleation and growth of undoped gallium arsenide (GaAs) epitaxial layers, grown by metallo-organic vapour-phase epitaxy (MOVPE) on Si (001) substrates, were investigated by transmission electron microscopy (TEM). The influence of growth time and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84a2bd51732cf08886987d15a46b9898
https://doi.org/10.1016/0167-577x(92)90111-v
https://doi.org/10.1016/0167-577x(92)90111-v
Autor:
Vanessa Angela Jackson, J. H Neethling, A.N. Paulse, A. A Bester, K. R. Du Plessis, Wesaal Khan
Publikováno v:
Water science and technology : a journal of the International Association on Water Pollution Research. 55(3)
The major aim of this study was to evaluate and develop artificial bioremediation systems to reduce or remove metal pollutants from contaminated river water and to decrease the chemical oxygen demand (COD) in distillery effluent. Metals were extracte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4f6c41b2dc6f5a3d448988ae33609e73
https://pubmed.ncbi.nlm.nih.gov/17410855
https://pubmed.ncbi.nlm.nih.gov/17410855