Zobrazeno 1 - 10
of 190
pro vyhledávání: '"J H Morris"'
Autor:
Christoph Freysoldt, Ramya Cuduvally, Jonathan Op de Beeck, Wilfried Vandervorst, Richard J. H. Morris, Claudia Fleischmann, Jeroen E. Scheerder, Paul van der Heide
Publikováno v:
Microscopy and Microanalysis. 27:418-420
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7efca70db8b3f3eb1a277ad82f8d418e
https://doi.org/10.1017/s1431927621002014
https://doi.org/10.1017/s1431927621002014
Autor:
Ramya Cuduvally, Richard J. H. Morris, Giel Oosterbos, Piero Ferrari, Claudia Fleischmann, Richard G. Forbes, Wilfried Vandervorst
A major challenge for atom probe tomography (APT) quantification is the inability to decouple ions that possess the same mass–charge (m/n) ratio but a different mass. For example, 75As+ and 75As22+ at ∼75 Da or 14N+ and 28Si2+ at ∼14 Da cannot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bbc36d1e9790935b449964866e877a53
Autor:
Gianluca Rengo, Clement Porret, Andriy Yakovitch Hikavyy, Gitte Coenen, Mustafa Ayyad, Richard J. H. Morris, Simone Pollastri, Danilo Oliveira De Souza, Didier Grandjean, Roger Loo, Andre Vantomme
Publikováno v:
ECS Meeting Abstracts. :1216-1216
Over the last few decades, MOSFET architectures have evolved from planar to 3D structures (FinFET and, more recently, gate-all-around and Forksheet devices) to improve the channel control at very scaled dimensions. In this framework, highly doped con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::304ee247ff75e4ff22dd6049c67658cf
https://doi.org/10.1149/ma2022-02321216mtgabs
https://doi.org/10.1149/ma2022-02321216mtgabs
Autor:
Claudia Fleischmann, Richard J. H. Morris, Gouri Sankar Kar, Jeroen E. Scheerder, Mihaela Popovici, Wilfried Vandervorst, Paul van der Heide, Ludovic Goux, Johan Meersschaut
Publikováno v:
Microscopy and Microanalysis. 27:2480-2481
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::573f7319cd635ce73b658b0b41bdb928
https://doi.org/10.1017/s1431927621008849
https://doi.org/10.1017/s1431927621008849
Autor:
Masoud Dialameh, Claudia Fleischmann, Richard J. H. Morris, Jeroen E. Scheerder, Johan Meersschaut, Olivier Richard, Wilfried Vandervorst, Paul van der Heide
Publikováno v:
Microscopy and Microanalysis. 27:178-179
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b25766f35d98fbabc0ae3881d0952b5
https://doi.org/10.1017/s1431927621001240
https://doi.org/10.1017/s1431927621001240
Autor:
Gianluca Rengo, Clement Porret, Andriy Hikavyy, Erik Rosseel, Mustafa Ayyad, Richard J. H. Morris, Rami Khazaka, Roger Loo, André Vantomme
Publikováno v:
ECS Journal of Solid State Science and Technology
Contact resistivity reduction at the source/drain contacts is one of the main requirements for the fabrication of future MOS devices. Current research focuses on methods to increase the active doping concentration near the contact region in silicon-g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::245f714a89df71bd10dbf34d33e3bbfb
https://doi.org/10.1149/2162-8777/ac546e
https://doi.org/10.1149/2162-8777/ac546e
Autor:
Richard J. H. Morris, Clement Porret, Mustafa Ayyad, Geoffrey Pourtois, Erik Rosseel, Andriy Hikavyy, Roger Loo, André Vantomme, Gianluca Rengo
Publikováno v:
ECS Meeting Abstracts. :934-934
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c5a7c82cfc91c6ee228fcd73bc701ab1
https://doi.org/10.1149/ma2021-0230934mtgabs
https://doi.org/10.1149/ma2021-0230934mtgabs
Autor:
Ramya, Cuduvally, Richard J H, Morris, Piero, Ferrari, Janusz, Bogdanowicz, Claudia, Fleischmann, Davit, Melkonyan, Wilfried, Vandervorst
Publikováno v:
Ultramicroscopy. 210
With the objective of applying laser-assisted atom probe tomography to compositional analysis within nanoscale InGaAs devices, experimental conditions that may provide an accurate composition estimate were sought by extensively studying an InGaAs bla
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::26145f97c39a34de4aa7556fe0b8f3a3
https://pubmed.ncbi.nlm.nih.gov/31918069
https://pubmed.ncbi.nlm.nih.gov/31918069
Autor:
Gianluca Rengo, André Vantomme, Richard J. H. Morris, Mustafa Ayyad, Roger Loo, Clement Porret, Erik Rosseel, Andriy Hikavyy
Publikováno v:
ECS Meeting Abstracts. :1096-1096
New generations of CMOS field effect transistors (FET) impose stringent controls of device geometries and material properties. Moving towards more aggressively scaled dimensions increases the level of the different specifications to mitigate the cont
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::694b235648d626c2216aa48366395955
https://doi.org/10.1149/ma2021-01341096mtgabs
https://doi.org/10.1149/ma2021-01341096mtgabs
Autor:
Richard J. H. Morris
Publikováno v:
Applied Surface Science. 390:778-783
With SiGe device technology still developing, a concomitant effort to develop accurate dopant quantification over the entire Si 1 − x Ge x ( 0 ≤ x ≤ 1 ) range using ultra low energy secondary ion mass spectrometry is required. Here we present a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb95b75bdb7e031a539a54fe0e2ec5ff
https://doi.org/10.1016/j.apsusc.2016.08.099
https://doi.org/10.1016/j.apsusc.2016.08.099