Zobrazeno 1 - 10
of 195
pro vyhledávání: '"J H Evans"'
Autor:
Simone J. H. Evans, Jolling K. de Pree
Publikováno v:
Journal of European Competition Law & Practice. 7:527-529
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d65bf5ac0d6cd0df8420c28b29a716a9
https://doi.org/10.1093/jeclap/lpw077
https://doi.org/10.1093/jeclap/lpw077
Publikováno v:
Materials Science Forum. :1315-1318
Admittance spectroscopy (AS) and deep level transient spectroscopy (DLTS) have been applied to B-doped thin polycrystalline diamond films deposited on p+-silicon by hot filament chemical vapour deposition. Films with two boron concentrations (1.5×10
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1de6341cf6a3e201ba88ae65ab3665e
https://doi.org/10.4028/www.scientific.net/msf.717-720.1315
https://doi.org/10.4028/www.scientific.net/msf.717-720.1315
Autor:
K.D. Vernon-Parry, J. H. Evans-Freeman, R. J. Airey, I. M. Dharmadasa, Colin J. Humphreys, Menno J. Kappers, O.S. Elsherif
Publikováno v:
Thin Solid Films. 520:3064-3070
Mg-doped GaN films have been grown on sapphire by metalorganic vapour phase epitaxy. Two different buffer layer schemes between the film and the sapphire substrate were used, giving rise to differing threading dislocation densities (TDDs) in the GaN.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e24d321598460f6113ba69e269091b3
https://doi.org/10.1016/j.tsf.2011.11.020
https://doi.org/10.1016/j.tsf.2011.11.020
Publikováno v:
Microelectronic Engineering. 88:3353-3359
The temperature-dependent electrical characteristics of the Au/n-Si Schottky diodes have been studied in the temperature range of 40-300K. Current density-voltage (J-V) characteristics of these diodes have been analyzed on the basis of thermionic emi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::accdca5699c3af3c817fb8ab0773dc81
https://doi.org/10.1016/j.mee.2011.07.001
https://doi.org/10.1016/j.mee.2011.07.001
Publikováno v:
Journal of European Competition Law & Practice. 1:126-129
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::388757ec66f73e546498515b0f5649ea
https://doi.org/10.1093/jeclap/lpq005
https://doi.org/10.1093/jeclap/lpq005
Publikováno v:
physica status solidi (a). 205:2184-2189
High resolution Laplace deep level transient spectroscopy (LDLTS) has been used to characterise deep electronic states in the band gap of polycrystalline p-type diamond. The thin diamond films were grown by the hot-filament chemical vapour deposition
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82d17fb05c2366bdc19527c1d19fb3ce
https://doi.org/10.1002/pssa.200879710
https://doi.org/10.1002/pssa.200879710
Autor:
J. H. Evans
Publikováno v:
Journal of Medicine and Philosophy. 31:213-234
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f4e04dd39c46d65c339106b4026b21b
https://doi.org/10.1080/03605310600712834
https://doi.org/10.1080/03605310600712834
Autor:
J. H. Evans
Publikováno v:
Philosophical Magazine. 85:1177-1190
This paper describes the use of simulation techniques to examine some of the processes involved in the alignment of voids under the influence of one-dimensional self interstitial atom (1-d SIA) transport. The work follows the paper of Heinisch and Si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0410483f86d008ca08ad0a21050189c9
https://doi.org/10.1080/14786430512331325606
https://doi.org/10.1080/14786430512331325606
Autor:
Tamaki Shibayama, Stephen E. Donnelly, J. H. Evans, Yuna Sun, Chonghong Zhang, Vladimir Vishnyakov
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 218:53-60
In this work, the annealing behavior of microstructures in 4H-SiC helium-implanted at about 500 K to moderate doses (2.5–5) × 1016 ions cm−2 is studied by combining transmission electron microscopy (TEM) and Rutherford backscattering spectrometr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c35317a3f4c5853c10989f191b60bff0
https://doi.org/10.1016/j.nimb.2003.12.082
https://doi.org/10.1016/j.nimb.2003.12.082
Publikováno v:
Journal of Applied Physics. 94:6017-6022
A cross-sectional transmission electron microscope investigation of dose dependence and annealing behavior of microstructures in helium-implanted silicon carbide is presented. Specimens of silicon carbide (4H–SiC) were mainly implanted with 30-keV-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cb452cfba667053b4f4d691ca8ea43cd
https://doi.org/10.1063/1.1611630
https://doi.org/10.1063/1.1611630