Zobrazeno 1 - 10
of 12
pro vyhledávání: '"J H, Smet"'
Publikováno v:
JETP Letters. 117:68-74
A bilayer electron system that is formed in a 60-nm-wide GaAs quantum well and has a large difference of the electron densities in the layers has been studied. It has been found that, when a magnetic field is tilted from the normal to the plane of th
Autor:
J. Falson, I. Sodemann, B. Skinner, D. Tabrea, Y. Kozuka, A. Tsukazaki, M. Kawasaki, K. von Klitzing, J. H. Smet
Publikováno v:
Nature Materials. 21:311-316
The competition between kinetic energy and Coulomb interactions in electronic systems can lead to complex many-body ground states with competing superconducting, charge density wave, and magnetic orders. Here we study the low temperature phases of a
Autor:
G. Hassink, R. Wanke, I. Rastegar, W. Braun, C. Stephanos, P. Herlinger, J. H. Smet, J. Mannhart
Publikováno v:
APL Materials, Vol 3, Iss 7, Pp 076106-076106-6 (2015)
Graphene, being an atomically thin conducting sheet, is a candidate material for gate electrodes in vacuum electronic devices, as it may be traversed by low-energy electrons. The transparency of graphene to electrons with energies between 2 and 40 eV
Externí odkaz:
https://doaj.org/article/1e1b036126154f95bb89af0391ac20d1
Publikováno v:
Nature. 570(7761)
The photovoltaic effect in traditional p-n junctions-where a p-type material (with an excess of holes) abuts an n-type material (with an excess of electrons)-involves the light-induced creation of electron-hole pairs and their subsequent separation,
Publikováno v:
Springer Series in Solid-State Sciences ISBN: 9783319654355
The discoveries of the integer and fractional quantum Hall effects (von Klitzing, Dorda, Pepper, Phys Rev Lett 45:494, 1980, [1], Tsui, Stormer, Gossard, Phys Rev Lett 48:1559, 1982, [2]) in the early 1980s opened an exciting field in condensed matte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::572ff8fe9255a0c2dcdfc68818c3b523
https://doi.org/10.1007/978-3-319-65436-2_13
https://doi.org/10.1007/978-3-319-65436-2_13
Autor:
V. Diadiuk, Woo Young Choi, Steven H. Groves, Brian R. Bennett, Ning Pan, J. H. Smet, Lung-Han Peng, S. C. Palmateer, Tom P. E. Broekaert, Clifton G. Fonstad
Publikováno v:
Journal of Applied Physics. 72:3664-3669
Infrared absorption and photocurrent measurements have been applied to study the photoresponse below the band gap of indium gallium arsenide (In0.53Ga0.47As) grown lattice matched to Fe‐doped semi‐insulating indium phosphide (InP) substrates by v
Autor:
Yong-qing Li, J. H. Smet
Publikováno v:
Springer Series in Solid-State Sciences ISBN: 9783540788195
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60ef60d1e6c54e5b66195daa52c462af
https://doi.org/10.1007/978-3-540-78820-1_12
https://doi.org/10.1007/978-3-540-78820-1_12
Autor:
A B, Van'kov, L V, Kulik, I V, Kukushkin, V E, Kirpichev, S, Dickmann, V M, Zhilin, J H, Smet, K, von Klitzing, W, Wegscheider
Publikováno v:
Physical review letters. 97(24)
We report an inelastic light scattering study of the cyclotron spin-flip mode in the two-dimensional electron system at filling nu=1. The energy of this mode can serve as a probe of the many-body exchange interaction on short length scales. Its magne
Publikováno v:
Physical review letters. 92(14)
We examine the phase and the period of the radiation-induced oscillatory magnetoresistance in GaAs/AlGaAs devices utilizing in situ magnetic field calibration by electron spin resonance of diphenyl-picryl-hydrazal. The results confirm a f-independent
Autor:
J. H. Smet, C. Albrecht, R. A. Deutschmann, M. Bichler, G. Abstreiter, W. Wegscheider, M. Rother
Publikováno v:
Springer Proceedings in Physics ISBN: 9783642639937
Springer Proceedings in Physics
Springer Proceedings in Physics
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::731589b679c8bb103e79385aa69f7fe4
https://doi.org/10.1007/978-3-642-59484-7_411
https://doi.org/10.1007/978-3-642-59484-7_411