Zobrazeno 1 - 10
of 24
pro vyhledávání: '"J G, Wilkes"'
Two samples consisting of silicon oxide layers, of different thicknesses, on a crystalline silicon substrate have been investigated using the technique of neutron reflectivity. By simulating the neutron reflectivity from a theoretical scattering leng
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::39b696aadc75fe44c6b115e3d666cac0
https://doi.org/10.1088/0022-3727/22/12/010
https://doi.org/10.1088/0022-3727/22/12/010
Publikováno v:
Journal of The Electrochemical Society. 137:647-652
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3482a0feb422f890637ab1de89d9e76a
https://doi.org/10.1149/1.2086524
https://doi.org/10.1149/1.2086524
Autor:
R D, Beger, J G, Wilkes
Publikováno v:
Journal of computer-aided molecular design. 15(7)
We have developed four quantitative spectrometric data-activity relationship (QSDAR) models for 30 steroids binding to corticosteroid binding globulin, based on comparative spectral analysis (CoSA) of simulated 13C nuclear magnetic resonance (NMR) da
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::325de7fc54ac7cf0dd2ac7ea5bbd2592
https://pubmed.ncbi.nlm.nih.gov/11688946
https://pubmed.ncbi.nlm.nih.gov/11688946
Autor:
J G, Wilkes, J O, Lay
Publikováno v:
Methods in molecular biology (Clifton, N.J.). 157
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::7d1e09fc4dfe294c44e71fbb5a4488b3
https://pubmed.ncbi.nlm.nih.gov/11050992
https://pubmed.ncbi.nlm.nih.gov/11050992
Autor:
J G, Wilkes, M I, Churchwell, S M, Billedeau, D L, Vollmer, D A, Volmer, H C, Thompson, J O, Lay
Publikováno v:
Advances in experimental medicine and biology. 392
A method is presented for determining the purity of the mycotoxin fumonisin B1 (FB1) by high performance liquid chromatography (HPLC) with evaporative light scattering detection (ELSD). The ELSD is a universal HPLC detector that exhibits a non-linear
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::f5a0973b4347d45c5aa608e8bc644759
https://pubmed.ncbi.nlm.nih.gov/8850608
https://pubmed.ncbi.nlm.nih.gov/8850608
Publikováno v:
Rapid communications in mass spectrometry : RCM. 10(10)
Matrix assisted laser desorption/ionization time-of-flight mass spectrometry (MALDI-TOFMS) was investigated as a method for the rapid identification of whole bacteria, either by comparison with archived reference spectra or by co-analysis with cultur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::dae8a8bdae01704ee56996e359d015da
https://pubmed.ncbi.nlm.nih.gov/8759332
https://pubmed.ncbi.nlm.nih.gov/8759332
Publikováno v:
ACS Symposium Series ISBN: 9780841217409
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f2973036e08d2b2b5bf749c6ffc67f8
https://doi.org/10.1021/bk-1990-0420.ch014
https://doi.org/10.1021/bk-1990-0420.ch014
Publikováno v:
Semiconductor Science and Technology. 2:554-557
The temperature at which silicon is subjected to 'room-temperature' radiation damage is shown to determine the sequence of reactions undergone by the radiation products. For 'low'-temperature irradiation the production of interstitial carbon (Ci) ato
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::001d7760a7388e052cf547a7a587ba8a
https://doi.org/10.1088/0268-1242/2/8/015
https://doi.org/10.1088/0268-1242/2/8/015
Publikováno v:
Solid State Communications. 50:1057-1061
Data are reported on the production of the 969 meV absorption line as functions of the carbon concentration and radiation dose in FZ and CZ silicon. With increasing dose of 2 MeV electrons the absorption first increases and then decreases. Simple equ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dbf77995bc97d6c3c8571edaa3d2381e
https://doi.org/10.1016/0038-1098(84)90287-4
https://doi.org/10.1016/0038-1098(84)90287-4
Publikováno v:
Journal of Applied Physics. 48:1646-1655
A dislocation‐free silicon crystal grown by the Czochralski technique has been heat treated over a wide temperature‐time range to explore the basic silicon‐oxygen relationship. The processes occurring were followed by carrier‐concentration ch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::194f0b7d2d9b6f70f43523c5192feec4
https://doi.org/10.1063/1.323847
https://doi.org/10.1063/1.323847