Výsledky vyhledávání - "J G, Simmons"

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Modelling of optical pumping in split-electrode semiconductor lasers

Autor: J. H. Swoger, J. G. Simmons, D. A. Thompson

Publikováno v: IEE Proceedings - Optoelectronics. 146:159-164

An analysis of split-electrode semiconductor lasers is described that is able to model the effects of injecting light from an external source into the laser facets. The equations describe the temporal evolution of the carrier and photon distributions

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3b905c9d86b794baf76c12850bb3967c
https://doi.org/10.1049/ip-opt:19990577

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Wet Chemical Etching for V‐grooves into InP Substrates

Autor: J. G. Simmons, J. Wang, D. A. Thompson

Publikováno v: Journal of The Electrochemical Society. 145:2931-2937

A systematic study has been performed on the production of V-grooves in (100) InP substrates by wet chemical etching. The dissolution process and its dependence on etchant, etch mask, and its accuracy of alignment relative to the [011] or [0-11] dire

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::96752a5df40fee8413dad10fe73f5f87
https://doi.org/10.1149/1.1838739

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Akademický článek

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Band gap modification in Ne+-ion implanted In1−xGaxAs/InP and InAsyP1−y/InP quantum well structures

Autor: J. Z. Wan, D. A. Thompson, J. G. Simmons

Publikováno v: Journal of Applied Physics. 81:765-770

Band gap modification in Ne+-ion implanted In1−xGaxAs/InP (x=0.25, 0.33, 0.40, 0.47, 0.54, 0.61, 0.69) and InAsyP1−y/InP (y=0.32) quantum well structures has been studied by low temperature (12 K) photoluminescence spectra. The maximum usable hig

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6f4c589d7f415a74ed8450d20468bc51
https://doi.org/10.1063/1.364440

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A three-terminal N-channel InGaAsP–InP-based double heterostructure optoelectronic switch (DOES)

Autor: D. A. Thompson, J. G. Simmons, E. Tan, C. Blaauw

Publikováno v: Canadian Journal of Physics. 74:16-19

In this work, we give the first report on the physical and functional characteristics of a three-terminal InGaAsP–InP-based double heterostructure optoelectronic switch (DOES) device. In this device, electrical contact is made to the emitter, colle

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7b7da2e703aeb4c767674bda3bed1ea9
https://doi.org/10.1139/p96-823

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Insulin-like growth factor-I and epidermal growth factor interact to regulate growth and gene expression in IEC-6 intestinal epithelial cells

Autor: J. G. Simmons

Publikováno v: Molecular Endocrinology. 9:1157-1165

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1f5b0585bdf7c3ce58cc1943fd42f1db
https://doi.org/10.1210/me.9.9.1157

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Erratum: Trajectories of adolescent conduct problems in relation to cortical thickness development: a longitudinal MRI study

Autor: S Oostermeijer, S Whittle, C Suo, N B Allen, J G Simmons, N Vijayakumar, P M van de Ven, L M C Jansen, M Yücel, A Popma

Publikováno v: Translational Psychiatry. 6:e899-e899

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6b88363b20b90b1bcd84fb0625da2e42
https://doi.org/10.1038/tp.2016.134

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Noise and photoconductive gain in AlGaAs/GaAs quantum well intersubband infrared photodetectors

Autor: H. C. Liu, B. Xing, J. G. Simmons, Margaret Buchanan, Z. R. Wasilewski, Peter H. Wilson

Publikováno v: Journal of Applied Physics. 76:1889-1894

We reevaluate the current model of noise gain and photoconductive gain for AlGaAs/GaAs quantum well infrared photodetectors. An experimental study is carried out on samples covering different types of intersubband transitions, i.e., bound‐to‐cont

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7b507a2508066a474ee5bfad8b914a87
https://doi.org/10.1063/1.357713

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Comparison of quantum well infrared photodetectors grown on different molecular beam epitaxial systems

Autor: Jianmeng Li, Margaret Buchanan, J. G. Simmons, W J Schaff, M. Lamm, H. C. Liu, Peter H. Wilson, Z. R. Wasilewski

Publikováno v: Semiconductor Science and Technology. 8:2010-2014

A systematic comparison of quantum well infrared photodetectors (QWIPS) made by different molecular beam epitaxy (MBE) systems is presented. QWIPS with identical layer specifications were requested from three different MBE facilities. Measurements of

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5c1fc64ee710459d4ed002a6c02c7db1
https://doi.org/10.1088/0268-1242/8/11/012

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