Zobrazeno 1 - 10
of 472
pro vyhledávání: '"J Fuerst"'
Autor:
B. Giaccone, P. Berrutti, M. Martinello, S. Posen, A. Cravatta, A. Netepenko, T. Arkan, A. Grassellino, B. Hartsell, J. Kaluzny, A. Penhollow, D. Gonnella, M. Ross, J. Fuerst, G. Hays, J. T. Maniscalco, M. Doleans
Publikováno v:
Physical Review Accelerators and Beams, Vol 25, Iss 10, p 102001 (2022)
Plasma cleaning is a technique that can be applied in superconducting radio-frequency cavities in situ in cryomodules to decrease their level of field emission (FE). We developed the technique for Linac Coherent Light Source II (LCLS-II) cavities and
Externí odkaz:
https://doaj.org/article/56c2d01e41a84ea6ad518c1fc416dac2
Autor:
S. Posen, A. Cravatta, M. Checchin, S. Aderhold, C. Adolphsen, T. Arkan, D. Bafia, A. Benwell, D. Bice, B. Chase, C. Contreras-Martinez, L. Doolittle, J. Fuerst, D. Gonnella, A. Grassellino, C. Grimm, B. Hansen, E. Harms, B. Hartsell, G. Hays, J. Holzbauer, S. Hoobler, J. Kaluzny, T. Khabiboulline, M. Kucera, D. Lambert, R. Legg, F. Lewis, J. Makara, H. Maniar, J. T. Maniscalco, M. Martinello, J. Nelson, S. Paiagua, Y. Pischalnikov, P. Prieto, J. Reid, M. Ross, C. Serrano, N. Solyak, A. Syed, D. Sun, G. Tatkowski, R. Wang, M. White, L. Zacarias
Publikováno v:
Physical Review Accelerators and Beams, Vol 25, Iss 4, p 042001 (2022)
An eight-cavity, 1.3 GHz, SLAC linac coherent light source II High Energy cryomodule was assembled and tested at Fermilab to verify performance before the start of production. Its cavities were processed with a novel nitrogen doping treatment to impr
Externí odkaz:
https://doaj.org/article/1f68986fa2d54a54a9f3104d3616eda1
Publikováno v:
The Journal of Engineering (2019)
GaN device is a potential alternative to SiC as a wide band gap device. At present, there are almost no high-voltage GaN devices above 650 V, which makes an inverter design difficult for three-phase input using the standard two-level (2L) inverters.
Externí odkaz:
https://doaj.org/article/01e45f12e6614647ade1e6fcaaeaa32c
Akademický článek
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Autor:
M. Kasa, M. Borland, L. Emery, J. Fuerst, K. C. Harkay, Q. Hasse, Y. Ivanyushenkov, W. Jansma, I. Kesgin, V. Sajaev, Y. Shiroyanagi, Y. P. Sun, E. Gluskin
Publikováno v:
Physical Review Accelerators and Beams, Vol 23, Iss 5, p 050701 (2020)
Development of superconducting undulators (SCUs) continues at the Advanced Photon Source (APS). Several planar SCUs were designed and built, and two of them are currently in operation at the APS. In January 2018 a new helical SCU (HSCU) was installed
Externí odkaz:
https://doaj.org/article/27575b7e05dd4f30857dc36cb8d6abbf
Autor:
Christoph Luetge, Madeleine J. Fuerst
Publikováno v:
Business Ethics, the Environment & Responsibility. 32:25-33
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bfbeb1ddfbf4245a50074ebc8b9bb235
https://doi.org/10.1111/beer.12401
https://doi.org/10.1111/beer.12401
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Publikováno v:
The Journal of Engineering (2019)
GaN device is a potential alternative to SiC as a wide band gap device. At present, there are almost no high-voltage GaN devices above 650 V, which makes an inverter design difficult for three-phase input using the standard two-level (2L) inverters.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::360402a4c2c5c40e10d822536804c1ce
https://doi.org/10.1049/joe.2018.8096
https://doi.org/10.1049/joe.2018.8096
Autor:
Y. Ivanyushenkov, K. Harkay, M. Borland, R. Dejus, J. Dooling, C. Doose, L. Emery, J. Fuerst, J. Gagliano, Q. Hasse, M. Kasa, P. Kenesei, V. Sajaev, K. Schroeder, N. Sereno, S. Shastri, Y. Shiroyanagi, D. Skiadopoulos, M. Smith, X. Sun, E. Trakhtenberg, A. Xiao, A. Zholents, E. Gluskin
Publikováno v:
Physical Review Accelerators and Beams, Vol 20, Iss 10, p 100701 (2017)
Development of superconducting undulators continues at the Advanced Photon Source (APS). Two years after successful installation and commissioning of the first relatively short superconducting undulator “SCU0” in Sector 6 of the APS storage ring,
Externí odkaz:
https://doaj.org/article/d1bc64ab00df4f29b98bbc6b3786d39b