Zobrazeno 1 - 10
of 21
pro vyhledávání: '"J F Verwey"'
Publikováno v:
Journal of vacuum science and technology A: vacuum, surfaces, and films, 10(5), 3193-3202. American Institute of Physics
A model is formulated to understand and predict wafer temperatures in a tungsten low pressure chemical‐vapor‐deposition (LPCVD) single‐wafer cold‐wall reactor equipped with hot plate heating. The temperature control is usually carried out on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9df802eb06a103ff704fe8293cb9dfed
https://research.utwente.nl/en/publications/56feee03-42d8-4568-83bb-07e719696644
https://research.utwente.nl/en/publications/56feee03-42d8-4568-83bb-07e719696644
Autor:
J. F. Verwey, G. Greeuw
Publikováno v:
Journal of Applied Physics, 56(8), 2218-2224. AMER INST PHYSICS
Na+, Li+, and K+ ions have been implanted in thermally grown oxides (Tox =1000 °C) of metal‐oxide‐silicon structures. The mobilities of the Na+ and Li+ ions have been determined by means of the isothermal transient ionic current method in the te
Publikováno v:
Journal of Applied Physics, 60(3), 985-990. AMER INST PHYSICS
Kinetics of dry oxidation of silicon after implantation of fluorine in the oxide layer are investigated. It appeared that implanted fluorine can result in negative values of the linear oxidation rate constant. Fluorine profiles obtained by the nuclea
Publikováno v:
Journal of Non-Crystalline Solids, 77-8, 511-514. ELSEVIER SCIENCE BV
A self-consistent method for the evaluation of the flat-band voltage is presented, based on field-effect measurements at different temperatures. This can be used to account for space charge accumulation layers in all types of transport measurements.
Publikováno v:
Philosophical Magazine B-Physics of Condensed Matter Statistical Mechanics Electronic Optical and Magnetic Properties, 53(5), 431-444
The photofield effect in hydrogenated amorphous silicon metal-oxide-semiconductor (MOS) thin-film transistors is analysed for a broad range of applied gate voltages and at low illumination levels. The calculation of the current is based on the presen
Autor:
J. F. Verwey, P. S. Hammes
Publikováno v:
South African Journal of Plant and Soil. 6:235-239
Die groei en opbrengs van enkelstammige en meerstammige mielieplante uit dieselfde stand is vergelyk om vas te stel wat die effek van spruitvorming hierop is. Spruitontwikkeling het nie 'n wesentlike invloed op planthoogte en blaaroppervlakte van hoo
Publikováno v:
IEEE Transactions on Electron Devices, 32(9), 1757-1760
Amorphous silicon thin-film field-effect transistors have been made with a staggered electrode structure. In this structure we distinguish two separate contributions to the total contact resistance, namely, the Al/a-Si:H barrier itself and the bulk r
Autor:
J. F. Verwey
Publikováno v:
Journal of Applied Physics. 44:2681-2687
Carriers can be injected into the SiO2 from a junction reverse biased below avalanche and lying in the silicon near the Si–SiO2 interface. This effect was studied for electron injection in n‐channel MOS transistors. The electrons originated from
Autor:
J. F. Verwey
Publikováno v:
Journal of Applied Physics. 43:2273-2277
Results are reported on the current of holes injected into thermally grown SiO2 from a planar avalanching p‐n junction. The current seems to be limited by a bulk process, viz., field‐assisted thermal emission from traps in the SiO2 (Poole‐Frenk