Zobrazeno 1 - 10
of 18
pro vyhledávání: '"J F Rommeluère"'
Autor:
Gaëlle Amiri, Jinzhong Wang, Vincent Sallet, J. F. Rommeluère, Ouri Gorochov, Alain Lusson, John E. Lewis, Pierre Galtier, E. Rzepka
Publikováno v:
physica status solidi (a). 202:1967-1972
ZnO films were grown on sapphire substrates using vertical MOCVD system with DEZn and tertiary-butanol as precursors, respectively. The benefits of substrate treatment on the microstructure and morphology of the film were shown. The influences of gro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50dd50fb12c5cf87f16751bd782cfd8a
https://doi.org/10.1002/pssa.200420068
https://doi.org/10.1002/pssa.200420068
Autor:
Ouri Gorochov, Pierre Galtier, François Jomard, G. Amiri, Y. Marfaing, Vincent Sallet, J. Mimila-Arroyo, L. Svob, J. F. Rommeluère, Alain Lusson
Publikováno v:
physica status solidi (c). 1:904-907
The incorporation of nitrogen as an acceptor in ZnO has been investigated in several ways. First, the growth parameters which allow achieving the lowest residual n type conductivity on undoped samples have been investigated. Second, nitrogen was intr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::577cd1ed9c5b2dd103289554505645a1
https://doi.org/10.1002/pssc.200304251
https://doi.org/10.1002/pssc.200304251
Autor:
Robert Triboulet, J. F. Rommeluère, Carmen Ocal, Carmen Munuera, Jesús Zúñiga-Pérez, F. Soria, Vicente Muñoz-Sanjosé, Vincent Sallet
Publikováno v:
Journal of Crystal Growth. 264:70-78
A quantitative roughness and microstructural analysis of ZnO grown on sapphire by atmospheric metalorganic chemical vapor deposition (MOCVD) is presented. In order to investigate the influence of the substrate on the morphology, different sapphire or
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30bd89a8425073f726d831b750da5ec9
https://doi.org/10.1016/j.jcrysgro.2003.12.056
https://doi.org/10.1016/j.jcrysgro.2003.12.056
Autor:
Ouri Gorochov, C Thiandoume, Vicente Muñoz-Sanjosé, J. F. Rommeluère, Alain Lusson, Robert Triboulet, Vincent Sallet, J P Rivière, A. Rivière
Publikováno v:
Materials Letters
Materials Letters, Elsevier, 2002, 53 (1-2), pp.126-131. ⟨10.1016/S0167-577X(01)00558-4⟩
Materials Letters, Elsevier, 2002, 53 (1-2), pp.126-131. ⟨10.1016/S0167-577X(01)00558-4⟩
The growth of ZnO on (0001) sapphire substrates using metalorganic chemical vapor deposition is reported. Diethylzinc and tertiarybutanol were used, respectively, as zinc and oxygen sources. Growth conditions are detailed such as the substrate temper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::230974146dde1cd9b65aa973e31bda20
https://doi.org/10.1016/s0167-577x(01)00558-4
https://doi.org/10.1016/s0167-577x(01)00558-4
Autor:
Vincent Sallet, S. Fusil, A. Rivière, Ouri Gorochov, Robert Triboulet, J. F. Rommeluère, Alain Lusson
Publikováno v:
physica status solidi (b). 229:903-906
The growth of ZnO on (0001) sapphire substrates using metalorganic chemical vapor deposition (MOCVD) is investigated. Usual growth conditions are detailed. In addition, a particular attention is paid to the cleanness state of the MOCVD reactor. ZnO e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4692d74a0a8c495d6760c39955f88f63
https://doi.org/10.1002/1521-3951(200201)229:2<903::aid-pssb903>3.0.co
https://doi.org/10.1002/1521-3951(200201)229:2<903::aid-pssb903>3.0.co
Publikováno v:
Journal of Applied Physics. 88:550-554
Arsenic doped CdTe layers have been successfully exposed to a hydrogen or deuterium plasma to study the diffusion of these species and their interactions with arsenic. It is shown that hydrogen behaves similarly when unintentionally (during growth) o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bffa3549cb19569dfe21e2faef7b34cc
https://doi.org/10.1063/1.373694
https://doi.org/10.1063/1.373694
Autor:
Y. Marfaing, J F Rommeluère, J P Rivière, A. Tromson-Carli, A Rivière, Alain Lusson, V Sallet
Publikováno v:
Semiconductor Science and Technology. 15:408-412
CdS layers were grown by MOVPE on (100) GaAs and (211)B GaAs substrates. The last substrate orientation yields homogeneous wurtzite CdS layers with sharply defined free excitonic structures seen in optical reflectivity and photoluminescence. Free exc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c6d5b0a72ec1ae4d53b97e687295eb8
https://doi.org/10.1088/0268-1242/15/4/318
https://doi.org/10.1088/0268-1242/15/4/318
Publikováno v:
Journal of Crystal Growth. :1279-1283
The effect of alternate n—p—n—p doping on the in-plane photoconductivity of Hg 1− x Cd x Te structures is investigated. A theoretical analysis leads to evaluation of the effective lifetime enhancement due to the spatial separation of photogen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47a7208a32f71b153e0278c336728f1e
https://doi.org/10.1016/s0022-0248(98)80265-0
https://doi.org/10.1016/s0022-0248(98)80265-0
Publikováno v:
Journal of Crystal Growth. :459-464
Substrate (GaAs) orientation dependence of arsenic incorporation in MOVPE-grown CdTe is reported. Arsine was used as the dopant carrier gas. The substrate orientations were (1 0 0), (5 1 1)A, B, (3 1 1)A, B and (2 1 1 )A, B. The highest incorporation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a412a8a479e031c21ee33349658c8fd1
https://doi.org/10.1016/s0022-0248(98)80096-1
https://doi.org/10.1016/s0022-0248(98)80096-1
Autor:
J. F. Rommeluère, Alain Lusson, François Jomard, J. Mimila-Arroyo, Vincent Sallet, Y. Marfaing, L. Svob
Publikováno v:
Applied Physics Letters. 83:287-289
The electrical activity of nitrogen as an acceptor in ZnO has been investigated in two ways. First, nitrogen was introduced by means of diallylamine during metalorganic vapor phase epitaxy (MOVPE) yielding incorporation of nitrogen in the range 1016
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1a34ab913578cd62aa78ee9c1503346
https://doi.org/10.1063/1.1592621
https://doi.org/10.1063/1.1592621