Zobrazeno 1 - 10
of 13
pro vyhledávání: '"J F Justo"'
Autor:
Sobrinho, Raimundo Eider Figueredo, Oliveira, Alexandre Maniçoba De, Gomes, Anna Karina Fontes, Aurival V L Mateus, Oliveira, Charles Artur Santos De, Junior, José Mario D., Santos, Karen C. M. Dos, Perotoni, Marcelo B., J. F. Justo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a8f07955770ccd7c003cbf8e159ccca
Publikováno v:
Physica B: Condensed Matter. :470-473
We performed a theoretical investigation on the interaction of arsenic impurities with a 30° glide partial dislocation in silicon. Our calculations were performed by ab initio total energy methods, based on the density functional theory and the loca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aabba8e29b70253f7725046fda8e311c
https://doi.org/10.1016/s0921-4526(01)00743-8
https://doi.org/10.1016/s0921-4526(01)00743-8
Autor:
Lucy V. C. Assali, J. F. Justo
Publikováno v:
Physica B: Condensed Matter. :489-492
We carried out a theoretical investigation on the properties of antiphase defects, or core reconstruction defects, in a 30° partial dislocation in Si and GaAs. The calculations were performed using ab initio total energy methods, based on the densit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b970f9c12d61518abe883a6bf897b9f4
https://doi.org/10.1016/s0921-4526(01)00819-5
https://doi.org/10.1016/s0921-4526(01)00819-5
Publikováno v:
Philosophical Magazine A. 81:1257-1281
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::245b0221e8e29c802a914ae9c4c75961
https://doi.org/10.1080/01418610110034019
https://doi.org/10.1080/01418610110034019
First principles calculations have been used to investigate the trends on the properties of isolated 3d transition metal impurities (from Sc to Cu) in diamond. Those impurities have small formation energies in the substitutional or double semi-vacanc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1f32b10f218e1d55a600422eddababce
Publikováno v:
Physical Review B. 69
We carried out a theoretical investigation on the electronic and structural properties of typical residual transition metal impurities in silicon carbide. The calculations were performed using the all electron spin-polarized full-potential linearized
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a80658f5db4bf11fbfad926781fca9e
https://doi.org/10.1103/physrevb.69.155212
https://doi.org/10.1103/physrevb.69.155212
Publikováno v:
Physical Review B. 65
We carried out a theoretical investigation of the structural properties of annealed $\ensuremath{\alpha}\ensuremath{-}\mathrm{SiC}$ and $\ensuremath{\alpha}\ensuremath{-}\mathrm{S}\mathrm{i}\mathrm{C}:\mathrm{H}.$ The calculations were performed usin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a00c647275bf1bc00301115c46c160a4
https://doi.org/10.1103/physrevb.65.104108
https://doi.org/10.1103/physrevb.65.104108
Publikováno v:
Physical Review B. 65
We carried out a theoretical investigation on the electronic properties of hydrogenated amorphous silicon nitride $(a\ensuremath{-}{\mathrm{SiN}}_{x}:\mathrm{H},$ $0.5lxl1.8).$ The calculations were performed by combining interatomic potentials and f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3dec67d022cd8ea993c0607aca8e6065
https://doi.org/10.1103/physrevb.65.073202
https://doi.org/10.1103/physrevb.65.073202