Zobrazeno 1 - 10
of 13
pro vyhledávání: '"J F, Wager"'
Publikováno v:
IEEE Spectrum. 48:42-56
Amorphous silicon has long been the king of flat panel displays. It began its reign in PC monitors and high-definition TV, then conquered netbooks, e-readers, and smartphones. No other substance was as suitable for the thin-film transistors that sit
Publikováno v:
Journal of Applied Physics. 78:5775-5781
The electrical characteristics of ZnS:Mn alternating‐current thin‐film electroluminescent (ACTFEL) devices grown by atomic layer epitaxy are assessed as a function of the thickness of the phosphor layer using capacitance‐voltage (C‐V) and int
Autor:
S, Lany, A, Zakutayev, T O, Mason, J F, Wager, K R, Poeppelmeier, J D, Perkins, J J, Berry, D S, Ginley, A, Zunger
Publikováno v:
Physical review letters. 108(1)
The microscopic cause of conductivity in transparent conducting oxides like ZnO, In{2}O{3}, and SnO{2} is generally considered to be a point defect mechanism in the bulk, involving intrinsic lattice defects, extrinsic dopants, or unintentional impuri
Autor:
J. F. Wager
Publikováno v:
Philosophical Magazine A. 67:897-904
Thermodynamic and kinetic aspects of anion vacancy self-compensation of p-type layers in three compound semiconductors, namely GaN, ZnSe and SiC, are considered. Thermodynamic considerations indicate that SiC p-type layers are thermodynamically stabl
Autor:
D. A. Keszler, J. F. Wager
Focus on player interfacial assessment using Schottky barrier and heterojunction theory, and analysis of p-windows for CIGS and CdTe cells.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::766ee655bfea65061a761ab29c6e3f91
https://doi.org/10.2172/942065
https://doi.org/10.2172/942065
Publikováno v:
Applied Physics Letters. 56:1889-1891
The capacitance‐voltage (C‐V) technique is proposed as a method for characterization of the electrical properties of alternating‐current thin‐film electroluminescent (ACTFEL) display devices. Analysis of the C‐V and aging characteristics of
Autor:
Stephen M. Goodnick, K. Streicher, T. K. Plant, S. Pennathur, J. F. Wager, Insook Lee, M. Reigrotzki, Peter Vogl, R. Redmer
Publikováno v:
Hot Carriers in Semiconductors ISBN: 9781461380351
AC thin-film electroluminescent (ACTFEL) devices are an essential technology for future flat-panel display applications. The basic structure of a typical ACTFEL device consists of a phosphor layer sandwiched between two insulating layers and a pair o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63f3e7b0120763f47610163593e3bd91
https://doi.org/10.1007/978-1-4613-0401-2_85
https://doi.org/10.1007/978-1-4613-0401-2_85
Publikováno v:
SID Symposium Digest of Technical Papers. 31:656-657
A process for Cu doping of atomic layer epitaxy (ALE) deposited SrS for thin-film electroluminescent devices is presented. The process involves the evaporation of dopant-containing material onto undoped ALE SrS thin films and rapid thermal annealing
Publikováno v:
SID Symposium Digest of Technical Papers. 30:944
Optical reflection filters for red, green, and blue colors for information display application could be easily fabricated by using inhomogeneous silicon oxynitride(SiON) thin films. Plasma-enhanced chemical vapor deposition (PECVD) was used to deposi
Publikováno v:
Journal of Physics D: Applied Physics; Mar2007, Vol. 40 Issue 5, p1335-1338, 4p