Zobrazeno 1 - 10
of 18
pro vyhledávání: '"J Elliott, Ortmann"'
Autor:
Agham Posadas, Albina Y. Borisevich, J. Elliott Ortmann, Moon J. Kim, Alexander A. Demkov, Sunah Kwon
Publikováno v:
ACS Applied Nano Materials. 4:2153-2159
Dating to the first reports of epitaxial oxide deposition on Si(001), the integration of complex oxides on silicon has been a fast-moving area of research, where fundamental materials physics is in...
Autor:
Xinxin Cai, Brian M. Zakrzewski, Yiqun A. Ying, Hae-Young Kee, Manfred Sigrist, J. Elliott Ortmann, Weifeng Sun, Zhiqiang Mao, Ying Liu
Publikováno v:
Physical Review B. 105
Publikováno v:
ACS Applied Nano Materials. 2:7713-7718
The fabrication of epitaxial, ultra-thin SrTiO3 (STO) on thick SiO2 without the need for complicated wafer-bonding processes has been demonstrated. The resulting transition metal oxide (TMO)-on-glass layer stack is analogous to traditional silicon-on
Autor:
Alexander A. Demkov, Moon J. Kim, Bryce I. Edmondson, John G. Ekerdt, J. Elliott Ortmann, Sunah Kwon, Chon Hei Lam
Publikováno v:
Journal of the American Ceramic Society. 103:1209-1218
Autor:
Stefan Abel, Lukas Czornomaz, Felix Eltes, Youri Popoff, J. Elliott Ortmann, Christian Mai, Lars Zimmermann, Georg Winzer, Jean Fompeyrine, Stefan Lischke, Daniele Caimi, Despoina Petousi, Marcel Kroh
Publikováno v:
Journal of Lightwave Technology
To develop a new generation of high-speed photonic modulators on silicon-technology-based photonics, new materials with large Pockels coefficients have been transferred to silicon substrates. Previous approaches focus on realizing stand-alone devices
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f1cd17b8fbdba79102dd2b5774f0cdc6
http://arxiv.org/abs/1911.02317
http://arxiv.org/abs/1911.02317
Autor:
Daniele Caimi, Pablo Sanchis, P. Castéra, J. Elliott Ortmann, Darius Urbonas, Felix Eltes, Jean Fompeyrine, Stefan Abel, Lukas Czornomaz
Publikováno v:
Scopus-Elsevier
Integrated photonics is a key technology platform for optical communication, sensing, and data processing. Driven by the success of the CMOS industry and the resulting maturity of silicon-based fabrication methods, silicon photonics has evolved as an
Publikováno v:
2019 IEEE MTT-S International Conference on Numerical Electromagnetic and Multiphysics Modeling and Optimization (NEMO).
The Pockels effect is a nonlinear optical effect describing the change of a material's refractive index due to an applied electric field. The complex oxide barium titanate (BTO) has become the focus of intense research for electro-optical application
Autor:
Andreas Messner, Pablo Sanchis, Ping Ma, Alexander A. Demkov, Stefan Abel, Tino Wagner, Alvaro Rosa, Daniele Caimi, P. Castéra, Jean Fompeyrine, Arne Josten, Benedikt Baeuerle, Lukas Czornomaz, A. M. Gutierrez, Juerg Leuthold, Domenico Tulli, J. Elliott Ortmann, Wolfgang Heni, Felix Eltes, Darius Urbonas
Publikováno v:
Nature Materials
Nature Materials, 18
Nature Materials, 18
The electro-optical Pockels effect is an essential nonlinear effect used in many applications. The ultrafast modulation of the refractive index is, for example, crucial to optical modulators in photonic circuits. Silicon has emerged as a platform for
Autor:
Felix Eltes, Daniele Caimi, J. Elliott Ortmann, Norbert Meier, Jean Fompeyrine, Lukas Czornomaz, Stefan Abel, Alexander A. Demkov
As the optical analogue to integrated electronics, integrated photonics has already found widespread use in data centers in the form of optical interconnects. As global network traffic continues its rapid expansion, the power consumption of such circ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a34a8263099210daf5dc0a07c4a17a58
Publikováno v:
physica status solidi (b). 258:2000497