Zobrazeno 1 - 10
of 50
pro vyhledávání: '"J Dienelt"'
Autor:
S. Steiner, F. Kuechenmeister, T. Villiger, J. Prinz, C. Papadopoulos, H. Kabus, J. Urban, C. Morabito, J. Kwon, A. Rodriguez, J. Krinke, J. Dienelt, R. Geilenkeuser, D. Breuer, M. Cammarata
Publikováno v:
Microelectronics Reliability. 114:113899
In this publication, the influence of bond wire material properties (Au 2N/4N), and plasma pre-treatment on the wire-bond strength is investigated based on Automotive Electronics Council Qualification (AEC-Q100) and customer requirements. The wire pu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35217afc53aa53652fc261674793b393
https://doi.org/10.1016/j.microrel.2020.113899
https://doi.org/10.1016/j.microrel.2020.113899
Autor:
Frank Scholze, Horst Neumann, M. Schulze, M. Kramer, J. Dienelt, M. Nestler, A. Tarraf, Bernd Rauschenbach
Publikováno v:
Microelectronic Engineering. 83:718-722
A new ion beam sputter deposition tool (Seg-IonSys-1900) for EUV mask blanks has been developed. Different novel concept ideas were implemented in the tool to overcome the actual critical points of low particle generation and their embedding in the d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0a64eb55256217bd1a3fc7a19c2465b
https://doi.org/10.1016/j.mee.2006.01.016
https://doi.org/10.1016/j.mee.2006.01.016
Publikováno v:
Microelectronic Engineering. :457-463
The surface roughness and the near surface damage of semiconductor structures after etching are important criteria for applications in the field of opto- and micro-electronics. The chemically assisted ion beam etching (CAIBE) causes a surface roughne
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4121c8b1ba0d5cce4422c7341e82e339
https://doi.org/10.1016/j.mee.2004.12.059
https://doi.org/10.1016/j.mee.2004.12.059
Publikováno v:
Surface and Coatings Technology. :157-161
A tuneable electronic chopper was adapted to the power supply of a common ECR (electron cyclotron resonance) broad beam ion source. The beam switch allows the selection of the frequency and the duty cycle in the range of 50 Hz to 10 kHz and 0.1 to 0.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab1c7e18e571c328343d4c338d8343bf
https://doi.org/10.1016/s0257-8972(03)00599-1
https://doi.org/10.1016/s0257-8972(03)00599-1
Publikováno v:
Plasma Sources Science and Technology. 12:489-494
Using commercially available broad beam ion sources and power supplies a tunable electronic beam switch was designed to generate a pulsed ion beam. The developed switch triggers all ion source supply voltages of a continuously powered electron cyclot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::636132e2b72d4e20283b8fc46279e700
https://doi.org/10.1088/0963-0252/12/3/326
https://doi.org/10.1088/0963-0252/12/3/326
Publikováno v:
Microelectronic Engineering. 65:163-170
Replica moulding combined with UV-curing offers a possibility to fabricate 3D-micro- and nanostructures at low-cost and high throughput. Using acrylates as UV-curable liquids, the 3D-microstructures formed after UV-curing are of excellent geometrical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7537369f83b8a819f177da52a4963f7f
https://doi.org/10.1016/s0167-9317(02)00848-1
https://doi.org/10.1016/s0167-9317(02)00848-1
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 17:2531-2534
Different dry etching methods were used to structure single crystal LaAlO3 (100). Utilization of reactive ion beam etching with CHF3 caused enhancement of the etch rate, the selectivity and the step angles compared to conventionally applied Ar ion mi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65984b6c0951b5a7c6c2b9fa90ebc83c
https://doi.org/10.1116/1.581992
https://doi.org/10.1116/1.581992
Autor:
Klaus Zimmer, Volker Gottschalch, F. Bigl, J Dienelt, K. Otte, A. Braun, G. Lippold, F Herfurth
Publikováno v:
Applied Surface Science. :800-804
We have studied laser-induced etching (LIE) of GaAs and AlxGa1−xAs (x=0.2, 0.66, 0.8) under chlorine atmosphere. In addition, LIE, applied to CuInSe2 for the first time, was investigated with respect to surface damage production and surface roughne
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b60a05ed5db2d9fe37defd2838f494e9
https://doi.org/10.1016/s0169-4332(97)00745-9
https://doi.org/10.1016/s0169-4332(97)00745-9
Publikováno v:
Journal of Magnetism and Magnetic Materials. :450-452
Magnetotransport data of step-edge junctions fabricated in magnetite (Fe3O4) films are presented. An enhancement of the low field magnetoresistance of these step-edge junctions as evidenced by measurements with the electrical current along and across
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46a1f42a54446ae9f258277c62daca7b
https://doi.org/10.1016/s0304-8853(01)01338-5
https://doi.org/10.1016/s0304-8853(01)01338-5
Publikováno v:
Applied Physics Letters. 74:1481-1483
The magnetoresistance of step-edge structures in La0.7Ca0.3MnO3 films was investigated. Step-edge arrays with 200 steps of height 140–200 nm and step separation 20 μm along [110] were fabricated on LaAlO3 substrates by chemically assisted ion-beam
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53a94cbfa1aa0c605f6e385160ce81c0
https://doi.org/10.1063/1.123587
https://doi.org/10.1063/1.123587