Zobrazeno 1 - 10
of 18
pro vyhledávání: '"J D Baniecki"'
Publikováno v:
New Journal of Physics, Vol 15, Iss 5, p 053014 (2013)
The interface formation between the perovskite oxides SrTiO _3 and BiFeO _3 was studied using in situ photoelectron spectroscopy by depositing BiFeO _3 on SrTiO _3 and vice versa via pulsed laser deposition. For the interfaces characterized, a type I
Externí odkaz:
https://doaj.org/article/585ddf3db6db4d749ce853bdcceb3da4
Autor:
Z. Yu, B. Saini, P. J. Liao, Y. K. Chang, V. Hou, C. H. Nien, Y. C. Shih, S. H. Yeong, V. Afanas'Ev, F. Huang, J. D. Baniecki, A. Mehta, C. S. Chang, H.-S. P. Wong, W. Tsai, P. C. McIntyre
Publikováno v:
2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75979f9a42d6ce26e176a9d5d00dd21c
https://doi.org/10.1109/vlsi-tsa54299.2022.9771017
https://doi.org/10.1109/vlsi-tsa54299.2022.9771017
Autor:
Thomas M. Shaw, Robert B. Laibowitz, H. Xu, Q. Y. Ma, J. D. Baniecki, J. Lian, Christopher Parks
Publikováno v:
Journal of Applied Physics. 89:2873-2885
The leakage current density–applied field (J−EA) characteristics of (BaxSr1−x)Ti1+yO3+z (BSTO) thin film capacitors with Pt electrodes that have been annealed in forming gas (95% Ar 5% H2 or D2) were investigated over the temperature range from
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7aa1d7f785a1a8d7c8b5d195bd88551
https://doi.org/10.1063/1.1339207
https://doi.org/10.1063/1.1339207
Autor:
Gregory Costrini, J. D. Baniecki, M. Wise, Laertis Economikos, Satish D. Athavale, J. Lian, N. Nagel
Publikováno v:
Integrated Ferroelectrics. 38:259-267
Three dimensional integration of BSTO thin films for Gigabit DRAM application is performed by a MOCVD BST process combined with a high temperature barrier stack of TaSiN/Ir/IrO2 with SiO2 sidewall protection. The SiO2 layer is formed by a new low tem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91ffe3f35ecd7ee675fe93a9c4491cf4
https://doi.org/10.1080/10584580108016939
https://doi.org/10.1080/10584580108016939
Autor:
P. R. Duncombe, David E. Kotecki, J. D. Baniecki, Katherine L. Saenger, H. Shen, Cyril Cabral, J. Lian, Robert B. Laibowitz, Timothy M. Shaw, Q. Y. Ma
Publikováno v:
Journal of the European Ceramic Society. 19:1457-1461
The leakage and dielectric relaxation currents of MOCVD Ba0·7Sr0·3TiO3 thin films with Pt electrodes after post top electrode anneals in oxygen and forming gas (95% Ar, 5% H2) were investigated. The Schottky barrier height for thermionic emission o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b39fc9d526a822f68798794e0c703206
https://doi.org/10.1016/s0955-2219(98)00449-x
https://doi.org/10.1016/s0955-2219(98)00449-x
Autor:
Timothy M. Shaw, Katherine L. Saenger, G. Kunkel, Cyril Cabral, J. Lian, Robert B. Laibowitz, J. D. Baniecki, Yandong Wang, H. Shen, P. R. Duncombe, M. Gutsche, David E. Kotecki, Richard Wise, Satish D. Athavale, Young-Jin Park
Publikováno v:
IBM Journal of Research and Development. 43:367-382
Thin films of barium-strontium titanate (Ba,Sr)TiO3 (BSTO) have been investigated for use as a capacitor dielectric for future generations of dynamic random-access memory (DRAM). This paper describes progress made in the preparation of BSTO films by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b1c56b0b66727c88637c17270fd8a4b
https://doi.org/10.1147/rd.433.0367
https://doi.org/10.1147/rd.433.0367
Publikováno v:
Applied Physics Letters. 75:2129-2131
Barium strontium titanate thin films are being developed as capacitors in dynamic random access memories. These films, grown on silicon substrates, are under tensile residual stress. By a converse electrostrictive effect, the in-plane tensile stress
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3512991c29178665e968fdaa7d506c1d
https://doi.org/10.1063/1.124939
https://doi.org/10.1063/1.124939
Autor:
P. R. Duncombe, Deborah A. Neumayer, Timothy M. Shaw, David E. Kotecki, M. Copel, Robert B. Laibowitz, J. D. Baniecki
Publikováno v:
Applied Physics Letters. 73:1832-1834
We have investigated the effects of Mn impurities on Ba0.7Sr0.3TiO3 thin films using x-ray photoemission spectroscopy. Mn acts as an electron acceptor, compensating for the charge density found in nominally undoped films. This causes a greatly increa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d79bc004ca0b8a928d07e17f24b9af1
https://doi.org/10.1063/1.122297
https://doi.org/10.1063/1.122297
Publikováno v:
Superconductor Science and Technology. 11:375-377
It was found that the resistance of (YBCO) films could be well controlled by Ni ion implantation. Both resistance and susceptibility measurements showed that the critical temperature of a film was systematically suppressed from its original value to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12cb0f2f4c023abdd13eeaa3374b9f81
https://doi.org/10.1088/0953-2048/11/4/005
https://doi.org/10.1088/0953-2048/11/4/005
Autor:
David E. Kotecki, P. R. Duncombe, Q. Y. Ma, Timothy M. Shaw, Robert B. Laibowitz, H. Shen, J. D. Baniecki, Deborah A. Neumayer
Publikováno v:
Applied Physics Letters. 72:498-500
The dielectric relaxation of Ba0.7Sr0.3TiO3 thin films was investigated up to K band (20 GHz) using time domain and frequency domain measurements. Our results show that from 1 mHz to 20 GHz, the dielectric relaxation of the complex capacitance of Ba0
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5c0b798f416b6fdd4b6c188cc9af3df
https://doi.org/10.1063/1.120796
https://doi.org/10.1063/1.120796