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pro vyhledávání: '"J D, Sullivan"'
The book presents a unique view of failure analysis of high technology devices. It describes capabilities and limitations of many analytical techniques and testing paths and decisions best followed in example failure analysis studies.
Publikováno v:
Current Bioactive Compounds. 5:39-78
This review will focus on the ability of the 2-aminoimidazole to occupy a unique subset of chemical space which makes it an ideal pharmacophore for the development of small molecule collections for discovery based research. These observations rely bo
Autor:
Malcolm Dunlop, André Balogh, J. D. Sullivan, P. W. Daly, A. Korth, J. F. Fennell, Theodore A. Fritz, H. Rème, R. H. Friedel, Qiugang Zong
Publikováno v:
Surveys in Geophysics. 26:215-240
Energetic electrons (e.g., 50 keV) travel along field lines with a high speed of around 20 R E s −1. These swift electrons trace out field lines in the magnetosphere in a rather short time, and therefore can provide nearly instantaneous information
Publikováno v:
Geophysical Research Letters. 25:1825-1828
We report on the POLAR/ CEPPAD discovery of a trapped, 60°
Autor:
Daniel J. D. Sullivan, E. R. Behringer, Harris C. Flaum, D. P. Masson, Andrew C. Kummel, E. J. Lanzendorf
Publikováno v:
The Journal of Physical Chemistry. 99:12863-12874
Autor:
M. B. Maple, S.-W. Cheong, Zachary Fisk, M. Marezio, A. S. Cooper, O. Chmaissem, S. H. Han, J. D. Sullivan
Publikováno v:
Physical Review B. 52:1347-1351
A structural aspect of the hole ordering phenomenon in the La{sub 2{minus}{ital x}}{ital M}{sub {ital x}}NiO{sub 4} ({ital x}=1/3, and {ital M}=Ca, Sr, or Ba) system has been investigated by means of x-ray diffraction experiments and measurements of
Publikováno v:
The Journal of Chemical Physics. 101:1582-1594
The effects of surface temperature (Ts) and surface structure upon the passivation and etching of GaAs(100) and GaAs(110) surfaces by Cl2 have been studied. The Ga‐rich GaAs(100) Ga‐c(8×2) and the stoichiometric GaAs(110) (1×1) surfaces form st
Publikováno v:
The Journal of Physical Chemistry. 98:1719-1731
Chemisorption probabilities (S) of monoenergetic I 2 , Br 2 , Cl 2 , and C 6 H 5 Cl beams have been measured on the Si(100)(2×1) surface. The sticking probabilities (S) were measured as a function of the incident translational energy (E i ), the sur
Publikováno v:
The Journal of Chemical Physics. 100:1634-1648
Initial sticking probabilities are measured for monoenergetic molecular chlorine upon the Ga‐rich GaAs(100) c(8×2), As‐rich GaAs(100) c(2×8), and stoichiometric GaAs(110)(1×1) surfaces. The sticking probabilities are measured as a function of