Výsledky vyhledávání

Angular Effects on Single-Event Mechanisms in Bulk FinFET Technologies

Autor: J. A. Maharrey, Michael L. Alles, Bharat L. Bhuva, Jeffrey S. Kauppila, Andrew L. Sternberg, Lloyd W. Massengill, Dennis R. Ball, J. D. Rowe, W. Timothy Holman, Patrick Nsengiyumva, Rachel C. Harrington, T. D. Haeffner, En Xia Zhang

Publikováno v: IEEE Transactions on Nuclear Science. 65:223-230

Angular single-event (SE) mechanisms and experimental upset data for 14-/16-nm bulk fin field-effect transistor (FinFET) technologies are presented and analyzed. The discrete structure of FinFETs introduces unique geometrical and orientation dependen

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fb5674efc32c4ac0002fa2df737d73b3
https://doi.org/10.1109/tns.2017.2775234

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The Impact of Charge Collection Volume and Parasitic Capacitance on SEUs in SOI- and Bulk-FinFET D Flip-Flops

Autor: J. A. Maharrey, Jeffrey S. Kauppila, Bharat L. Bhuva, Patrick Nsengiyumva, Michael L. Alles, J. D. Rowe, R. C. Harrington, Andrew L. Sternberg, Lloyd W. Massengill, Dennis R. Ball, T. D. Haeffner, En Xia Zhang

Publikováno v: IEEE Transactions on Nuclear Science. 65:326-330

Measured single-event (SE) heavy-ion data for comparable silicon on insulator (SOI) and bulk silicon FinFET D flip-flop (DFF) designs demonstrate a notably greater difference between the SOI and bulk responses, which has commonly been observed. Data

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::528cf0635425440d7387602e8bb62db9
https://doi.org/10.1109/tns.2017.2784763

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Ionizing Dose-Tolerant Enhancement-Mode Cascode for High-Voltage Power Devices

Autor: J. D. Rowe, J. Zydel, Andrew L. Sternberg, J. Schaf, Arthur F. Witulski, Ronald D. Schrimpf

Publikováno v: IEEE Transactions on Nuclear Science. 64:382-387

An enhancement-mode cascode power device topology is described in which a high-voltage commercial device is used in conjunction with a low-voltage radiation-tolerant device to enable a switch that functions well at high total ionizing dose. Although

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ac051d65922d414104d8dcb2ac7bd1b9
https://doi.org/10.1109/tns.2016.2636023

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Geometry-Aware Single-Event Enabled Compact Models for Sub-50 nm Partially Depleted Silicon-on-Insulator Technologies

Autor: R. C. Quinn, Jeffrey S. Kauppila, T. Daniel Loveless, Ronald D. Schrimpf, J. A. Maharrey, Dennis R. Ball, J. D. Rowe, Michael L. Alles, Lloyd W. Massengill

Publikováno v: IEEE Transactions on Nuclear Science. 62:1589-1598

A new geometry-aware single-event enabled compact model for sub-50 nm partially depleted silicon-on-insulator MOSFETs is presented. The model extends the bias-dependent single-event modeling methods with an integrated parasitic BJT using the SPICE Gu

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::823462825b7beaedec4828e661eb46ad
https://doi.org/10.1109/tns.2015.2443116

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On-Chip Measurement of Single-Event Transients in a 45 nm Silicon-on-Insulator Technology

Autor: Bharat L. Bhuva, Michael L. Alles, T. D. Loveless, W.T. Holman, Lloyd W. Massengill, Jeffrey S. Kauppila, T. D. Haeffner, Trey Reece, J. D. Rowe, N. M. Atkinson, R. W. Blaine, Dennis R. Ball, S. Jagannathan, N. J. Gaspard, J. R. Ahlbin

Publikováno v: IEEE Transactions on Nuclear Science. 59:2748-2755

Direct observation of fast-transient single event signatures often involves considerable uncertainty due to the limitations of monitoring circuitry. A built-in-self-test circuit for the measurement of single-event transients (SET) has been implemente

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::82276ab01ffd2e5afd1cb63ed59dbe42
https://doi.org/10.1109/tns.2012.2218257

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Heavy Ion SEU Test Data for 32nm SOI Flip-Flops

Autor: J. A. Maharrey, R. C. Quinn, T. D. Loveless, J. D. Rowe, Jeffrey S. Kauppila, Lloyd W. Massengill, K. Lilja, Michael W. McCurdy, Bharat L. Bhuva, En Xia Zhang, Michael L. Alles, Robert A. Reed, M. Bounasser, W.T. Holman

Publikováno v: 2015 IEEE Radiation Effects Data Workshop (REDW).

Two 32nm SOI single-event upset test chips have been irradiated at LBNL and TAMU heavy ion test facilities. The test chips include unhardened and RHBD designs such as DICE, LEAP DICE, and stacking devices. SEU cross-section data are presented for the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1d6daa6fd1f861e8506d37dee9355c06
https://doi.org/10.1109/redw.2015.7336712

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The impact of mechanical stress on the total-dose response of linear bipolar transistors with various passivation layers

Autor: Marty R. Shaneyfelt, R.R. Cizmarik, Ronald D. Schrimpf, J. D. Rowe, R.L. Pease, Kenneth F. Galloway, D.G. Platteter, Jerome Boch, Dennis R. Ball, Daniel M. Fleetwood, M.C. Maher

Publikováno v: IEEE Transactions on Nuclear Science. 52:1513-1517

In this work, we investigate how externally applied mechanical stress impacts the total dose hardness and enhanced low-dose-rate sensitivity of linear bipolar ICs fabricated with different passivation layers. To determine the effects of externally ap

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fdbaf8dbf6b5670db66c809af5fde364
https://doi.org/10.1109/tns.2005.855815

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System-level design hardening based on worst-case ASET Simulations

Autor: Ronald D. Schrimpf, A.L. Sternberg, Y. Boulghassoul, J. D. Rowe, P.C. Adell, Lloyd W. Massengill

Publikováno v: IEEE Transactions on Nuclear Science. 51:2787-2793

We present experimental and simulation results on single-event transients in an analog subsystem for satellite electronic equipment. Investigations based on worst-case transient events, simulated with transistor-level circuit models, suggest design m

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::06cac4fa51f4e836707c0bbd0e456f61
https://doi.org/10.1109/tns.2004.835091

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Applicability of circuit macromodeling to analog single-event transient analysis

Autor: Lloyd W. Massengill, J. D. Rowe, Y. Boulghassoul

Publikováno v: IEEE Transactions on Nuclear Science. 50:2119-2125

We have evaluated the applicability of vendor-supplied analog circuit macromodels to single-event transient (SET) analyses. Our findings demonstrate that macromodeling is very effective for system-level SET investigations; yet it is inadequate to add

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::008cfb9d2a1314fe7db85d013ee6a6e4
https://doi.org/10.1109/tns.2003.821393

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GlutathioneS-transferases in human renal cortex and neoplastic tissue : enzymatic activity, isoenzyme profile and immunohistochemical localization

Autor: Vicente Rodilla, J D Rowe, G I Murray, J M Veitch, G M Hawksworth, A A Benzie

Publikováno v: Xenobiotica. 28:443-456

1. Glutathione S-transferase (GST) activity in the cytosol of renal cortex and tumours from eight men and eight women was measured using 1-chloro-2,4-dinitrobenzene (CDNB) as a substrate. GST activities ranged from 685 to 2192 nmol/min/mg protein in

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bee30300370c4f4ff7969fcc7d68b3e3
https://doi.org/10.1080/004982598239371

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