Zobrazeno 1 - 10
of 48
pro vyhledávání: '"J Candelaria"'
Autor:
L Lopes, J Candelaria, F Glina, B Parra, T Ventura, I Yoshida, W Baccaglini, C Barbosa, J Bessa, S Glina
Publikováno v:
The Journal of Sexual Medicine. 20
Introduction Fertility and birth control is a worldwide health concerning since it is an important issue regarding economic, religious, or social impacts for couples. Women have plenty options since oral hormonal anticonception were introduced in dai
Autor:
Wesley J Candelaria
Publikováno v:
Open Forum Infectious Diseases
Background Coccidioidomycosis (Valley fever) is an airborne, invasive fungal infection endemic to Arizona, California, Mexico, and Central and South America. The dominant method of diagnosis is serology, which includes complement fixation (CF), immun
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
Michael Thompson, Jose Menendez, N. D. Theodore, Nigel Cave, K. M. Kramer, M. Meléndez-Lira, Jim Christiansen, Jon J. Candelaria, Ran Liu
Publikováno v:
Journal of Applied Physics. 82:4246-4252
We present a study of the infrared absorption and Raman scattering intensity of the local carbon mode in Si1−yCy alloys grown by direct carbon implantation followed by different recrystallization procedures. For the case of laser-induced recrystall
Autor:
Sam L. Sundaram, Jon J. Candelaria
Publikováno v:
International Journal of Electronics. 74:231-234
Advanced MOSAIC V technology uses a graded epitaxial stack of 0-9μm n epitaxial layer grown on an n + buried layer which has been implanted into an inirinsic epitaxial layer. A study of the intrinsic epitaxial layer profile is critical for reducing
Autor:
J. Candelaria
Publikováno v:
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..
Autor:
Ran Liu, Wolfgang Windl, Nigel Cave, Jose Menendez, J. D. Lorentzen, Jim Christiansen, N. D. Theodore, Jon J. Candelaria, M. Meléndez-Lira
Publikováno v:
Physical Review B. 56:3648-3650
Si 12yC y alloys grown by solid-phase epitaxy of carbon-implanted Si were investigated with Raman spectroscopy. A comparison between the experimental Raman spectrum and the spectrum predicted from ab initio calculations shows that the carbon distribu
Autor:
W. Wu, J. Chen, D. Dow, B. Maiti, J. Candelaria, Y. Yu, O. Adetutu, D. Weddington, Philip J. Tobin, D. Connelly, J. Mogab, F. Huang, Michael A. Mendicino
Publikováno v:
1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325).
We report here for the first time a 0.18 /spl mu/m fully-depleted SOI process with PVD TiN metal gate. As midgap work function metal gate and very light channel doping were used, threshold voltage can be easily controlled in /spl plusmn/300 mV to /sp
Autor:
T. Van Gompel, D. Hall, S. Pozder, O. Zia, R. Widenhofer, Y. Yu, S. Jallepalli, Surya Veeraraghavan, M. Mendicino, J. Candelaria, D. Connelly, Duckhyun Chang, D. Dow, X.-L. Xu, M. Rashed, M. Olivares
Publikováno v:
1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345).
We report high performance device characteristics of 0.18 /spl mu/m SOI CMOS technology with indium (In) and antimony (Sb) retrograde channel doping and argon (Ar) implant. Experimental results demonstrate significant suppression of floating body (FB
Autor:
S. Veeraraghavan, M. Mendicino, S. Jallepalli, Duckhyun Chang, M. Rashed, J. Candelaria, D. Connelly
Publikováno v:
1998 IEEE International SOI Conference Proceedings (Cat No.98CH36199).
Despite recent reports of high speed nonfully-depleted (NFD) silicon-on-insulator (SOI) CMOS processes (Assaderaghi et al. 1997), there are growing concerns about SOI scalability due to the off-state leakage current induced by parasitic bipolar effec