Zobrazeno 1 - 10
of 55
pro vyhledávání: '"J B Mullin"'
Publikováno v:
Journal of Materials Science: Materials in Electronics. 9:397-401
The crystal quality of CdTe, Cd0.96Zn0.04Te and Zn-diffused CdTe slices containing 1×1022 cm-3 atoms of zinc at the surface of the slice was investigated by the technique of defect etching. In this investigation, the chemical etch. Inoue EAg-1 reage
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7fd13b9d5fb7208ad36934e6bbddc6f0
https://doi.org/10.1023/a:1008996428822
https://doi.org/10.1023/a:1008996428822
Publikováno v:
Journal of Electronic Materials. 26:610-615
CdTe slices have been diffused in sealed silica capsules under conditions of saturated vapor pressure due to zinc in the temperature range 390–950°C. All slices annealed with zinc at temperatures above 450°C displayed extensive surface cracking b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::526f739fa2b0fa50ce0326db64dac0a5
https://doi.org/10.1007/s11664-997-0203-8
https://doi.org/10.1007/s11664-997-0203-8
Publikováno v:
Semiconductor Science and Technology. 11:741-747
A comparison of the diffusion of the halogens into CdTe is given. Diffusion anneals were carried out at selected temperatures in the range between 20 and in evacuated silica ampoules using a diffusion source of , or under saturated vapour pressure co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80190aa653b2bb3fb2d7c488ac25b92d
https://doi.org/10.1088/0268-1242/11/5/015
https://doi.org/10.1088/0268-1242/11/5/015
Publikováno v:
Journal of Materials Science: Materials in Electronics. 6:397-403
The morphology of undiffused and iodine-diffused CdTe slices and its effect on iodine concentration profiles is discussed. Such CdTe slices were analysed using defect etching, scanning electron microscopy (SEM), infrared microscopy and secondary ion
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8863627520cb47418af23a1411274009
https://doi.org/10.1007/bf00144641
https://doi.org/10.1007/bf00144641
Publikováno v:
Journal of Electronic Materials. 24:1225-1229
Studies on the diffusion of iodine into CdTe, mercury cadmium telluride (Hg0.8Cd0.2Te, referred to as MCT) and zinc cadmium telluride (Zn0.5Cd0.95Te, referred to as ZCT) in the temperature range of 20 to 600°C are compared and discussed. The concent
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25b470cc809488a97154ab6d44351b00
https://doi.org/10.1007/bf02653078
https://doi.org/10.1007/bf02653078
Publikováno v:
Journal of Electronic Materials. 24:581-585
Studies on the diffusion of iodine and zinc into CdTe are reported. Each iodine profile was divided up into four distinct regions and described mathematically by a function consisting of the sum of four complementary error functions. When plotted on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::574436408c422834c5719e49fab69da5
https://doi.org/10.1007/bf02657966
https://doi.org/10.1007/bf02657966
Publikováno v:
Advanced Materials for Optics and Electronics. 5:157-161
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90ddbe4ed0590291c5cf114986e7b487
https://doi.org/10.1002/amo.860050304
https://doi.org/10.1002/amo.860050304
Publikováno v:
Materials Science Forum. :57-62
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e320a619b204aa481ff61fce14962146
https://doi.org/10.4028/www.scientific.net/msf.182-184.57
https://doi.org/10.4028/www.scientific.net/msf.182-184.57
Publikováno v:
Journal of Materials Science: Materials in Electronics. 5:352-355
The compatibility of iodine and CdTe is discussed and methods by which CdTe can be doped with iodine from the vapour phase using closed tube diffusion techniques are described. At elevated temperatures ( ⩾ 100 ‡C) an elemental iodine diffusion so
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be91f3ec4e5de531b6eb597cb324bf4f
https://doi.org/10.1007/bf00215572
https://doi.org/10.1007/bf00215572
Publikováno v:
Journal of Crystal Growth. 138:279-284
Initial studies on the diffusion of iodine into CdTe are described. Diffusion anneals were carried out at selected temperatures in the range between 20 and 270°C in evacuated silica ampoules using a diffusion source of either elemental iodine or CdI
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10c8e2cc53087d17216afd487d91b67a
https://doi.org/10.1016/0022-0248(94)90821-4
https://doi.org/10.1016/0022-0248(94)90821-4