Zobrazeno 1 - 10
of 14
pro vyhledávání: '"J B Malherbe"'
Autor:
T. F. Mokgadi, Z. A. Y. Abdalla, M. Madhuku, E. G. Njoroge, M. Mlambo, P. Mdluli, A. Sohatsky, V. A. Skuratov, J. B. Malherbe, T. T. Hlatshwayo
Publikováno v:
Frontiers in Materials, Vol 10 (2023)
The presence of radiation-induced defects and the high temperature of implantation are breeding grounds for helium (He) to accumulate and form He-induced defects (bubbles, blisters, craters, and cavities) in silicon carbide (SiC). In this work, the i
Externí odkaz:
https://doaj.org/article/5a05b8d6160b478d9f7f3dc7cb907423
Autor:
H. A. A. Abdelbagi, T. A. O. Jafer, V. A. Skuratov, E. G. Njoroge, M. Mlambo, T. T. Hlatshwayo, J. B. Malherbe
Publikováno v:
Frontiers in Nuclear Engineering. 1
Polycrystalline SiC wafers were implanted with 360 keV strontium (Sr) ions at room temperature (RT)to a fluence of 2 × 1016 cm−2. Some of the implanted samples were irradiated with xenon (Xe) ions of 167 MeV to a fluence of 3.4 × 1014 cm−2 and
Publikováno v:
Journal of Applied Physics. 84:2565-2570
Deep level transient spectroscopy has been used to investigate the electronic properties and isochronal annealing behavior of defects formed in epitaxially grown n-Si by 1 keV He-, Ne-, and Ar-ion bombardment. Similarities between peaks found for the
Publikováno v:
Journal of Applied Physics. 83:4075-4080
The modification in the G-line (969.5 meV) and the C-line (789.4 meV) photoluminescence (PL) intensities were studied as a function of the fluence, energy, and mass of the bombarding ions (He, Ne, Ar, and Kr). The intensities of the luminescent lines
Publikováno v:
Surface and Interface Analysis. 17:719-725
The previously reported1,2 effect of low-energy (several keV) ion bombardment on the surface topography of InP was investigated by scanning transmission electron microscopy. Convergent beam electron diffraction patterns of the surface growth ‘cones
Publikováno v:
Scopus-Elsevier
We have used deep level transient spectroscopy (DLTS) and photoluminescence (PL) to determine the electronic and optical properties of the defects created during 1 keV He-, Ne- and Ar-ion bombardment. Except for their different relative concentration
Publikováno v:
Journal of Applied Physics. 71:2757-2759
The effect of 150‐keV Ar+ ion implantation of Cr/p‐Si(100) Schottky contacts was studied by measuring the current voltage characteristics over the temperature range 293–373 K before and after different doses of ion bombardment. The characterist
Autor:
J. B. Malherbe
Publikováno v:
Radiation Effects. 70:261-274
The projected ranges and straggling of 0.25 to 2.5 keV nitrogen atoms in silicon were determined by means of Auger electron spectroscopy combined with argon sputter depth profiling. The results show excellent correspondence with experimental measurem
Autor:
T B Scheffler, J B Malherbe
Publikováno v:
Journal of Physics A: Mathematical and General. 12:1011-1023
Simple yet accurate approximate formulae for the physically interesting complex eigenvalues for a delta function well plus linear potential are presented, and their results compared with numerical results accurate to twelve significant figures. By a
Autor:
H. W. Alberts, J. B. Malherbe
Publikováno v:
Radiation Effects. 69:231-238
Energy loss and straggling for protons, deuterons and α-particles in thin gold foils were measured by the indirect transmission technique. The measured stopping powers of the hydrogen ions agree reasonably well with the semi-empirical values of Ande